WINSEMI SBN13003A

SBN13003A
High Voltage Fast -Switching NPN Power Transistor
Features
�
Very High Switching Speed
�
High Voltage Capability
�
Wide Reverse Bias SOA
General Description
This Device is designed for high voltage , High speed
Switching characteristics required such as lighting
system, switching mode power supply.
Absolute Maximum Ratings
Symbol
Parameter
Test Conditions
Value
Units
VCES
Collector-Emitter Voltage
VBE=0
700
V
VCEO
Collector-Emitter Voltage
IB=0
400
V
VEBO
Emitter-Base Voltage
IC=0
9.0
V
IC
Collector Current
1.5
A
ICP
Collector pulse Current
3.0
A
IB
Base Current
0.75
A
IBM
Base Peak Current
1.5
A
PC
Total Dissipation at Tc=25℃
18
W
TJ
Operation Junction temperature
-40~150
℃
TSTG
Storage Temperature
-40~150
℃
tP=5ms
Tc:Case temperature(good cooling)
Thermal Characteristics
Symbol
RQJA
Parameter
Thermal Resistance Junction to Ambient
Rev.A Sep.2010
[email protected] Semiconductor Co., Ltd., All right reserved.
value
Units
13.6
℃/W
SBN13003A
Electrical Characteristics(Tc=25℃
Symbol
VCEO(sus)
unless otherwise noted)
Parameter
Test Conditions
Collector-Emitter Breakdown Voltage
Ic=10mA,Ib=0
Value
Min
Typ
Max
400
-
-
Ic=0.5A,Ib=0.1A
VCE(sat)
Collector-Emitter Saturation Voltage
Ic=1.0A,Ib=0.25A
0.5
1.0
Ic=0.5A,Ib=0.1A
1.0
-
-
Ic=1.0A,Ib=0.25A
Collector Base Cutoff Current
V
1.2
Vcb=700V
ICBO
1.0
-
(Vbe=-1.5v)
hFE
V
-
Ic=1.5A,Ib=0.5A
Base -Emitter Saturation voltage
V
0.3
-
VBE(sat)
Units
mA
Vcb=700V,Tc=100℃
5.0
Vce=2V,Ic=0.5A
10
-
30
Vce=2V,Ic=1.0A
5
-
25
0.25
1.0
1.32
3.0
0.23
0.4
-
1.2
4.0
-
0.12
0.3
-
1.8
5.0
-
0.16
0.4
DC Current Gain
Resistive Load
ton
Turn-on Time
ts
Storage time
tf
Fall Time
VCC=125V,Ic=1A
IB1=0.2A,IB2=-0.5A
Tp=25µs
Inductive Load
ts
Storage Time
tf
Fall Time
VCC=15V,Ic=1A
IB1=0.2A,IB2=-0.5A
L=0.35mH,Vclamp=300V
Inductive Load
ts
Storage Time
tf
Fall Time
VCC=15V,Ic=1A
IB1=0.2A,IB2=-0.5A
L=0.35mH,Vclamp=300V
Tc=100℃
µs
-
µs
µs
Note:
Pulse Test : Pulse width 300,Duty cycle 2%
2/5
Steady, all for your advance
SBN13003A
Fig.2 Base -Emitter Saturation Voltage
Fig.1DC Current Gain
Fig.3 Collector-Emitter Saturation Voltage
Fig.4 Safe Operation Area
Fig.5 Static Characteristics
Fig.6 Power Derating
3/5
Steady, all for your advance
SBN13003A
Resistive Load Switching Test Circuit
Inductive Load Switching & RBSOA Test Circuit
4/5
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SBN13003A
To-92 Package Dimension
Unit:mm
5/5
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