WINSEMI SBW3320

W3320
SB
SBW3320
High Voltage Fast-Switching NPN Power Transistor
Features
◆ Very High Switching Speed
◆ High Voltage Capability
◆ Wide Reverse Bias SOA
B
C
E
General Description
TO3P(B)
This Device is designed for high voltage, High speed
switching characteristics required such as lighting system,
switching mode power supply.
Absolute Maximum Ratings
Symbol
Parameter
Test Conditions
Value
Units
VCES
Collector-Emitter Voltage
VBE = 0
500
V
VCEO
Collector-Emitter Voltage
IB = 0
400
V
VEBO
IC = 0
7.0
V
IC
Emitter-Base Voltage
Collector Current
15
A
ICP
Collector pulse Current
30
A
IB
Base Current
5.0
A
IBM
Base Peak Current
10
A
PC
Total Dissipation at Tc = 25℃
80
W
TJ
Operation Junction Temperature
150
℃
TSTG
Storage Temperature
-65 ~ 150
℃
Parameter
Value
Units
RθJc
Thermal Resistance Junction to Case
1.56
℃/W
RθJA
Thermal Resistance Junction to Ambient
62.5
℃/W
tP = 5ms
Thermal Characteristics
Symbol
Jan 2009. Rev. 0
Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved.
T02-1
W3320
SB
SBW3320
Electrical Characteristics (TC=25℃ unless otherwise noted)
Value
Symbol
VCEO(sus)
Parameter
Test Conditions
Collector-Emitter Breakdown Voltage Ic=10mA,Ib=0
Ic=6.0A,Ib=1.2A
VCE(sat)
Units
Min
Typ
Max
400
-
-
V
-
-
1.0
V
-
-
2.0
V
-
-
1.2
V
-
-
1.5
V
Collector-Emitter Saturation Voltage
Ic=8.0A,Ib=1.6A
Tc=100℃
Ic=6.0A,Ib=1.2A
VBE(sat)
Base-Emitter Saturation Voltage
Ic=8.0A,Ib=1.6A
Tc=100℃
IEBO
Emitter-Base Cutoff Current
Veb=7V,Ic=0V
-
-
1
mA
IcBO
Collector-Base Cutoff Current
Vcb=500V,Ic=0V
-
-
1
mA
hFE
DC Current Gain
Vce=5V, Ic=5.0A
10
-
40
Vce=5V, Ic=8.0A
6
-
30
4
-
6
-
0.8
ts
Storage Time
VCC=5.0V , Ic=0.5A
tf
Fall Time
(UI9600)
fT
Current Gain Band with Prouct
Vce=10V, Ic=0.5A
4
㎲
MHz
Note:
Pulse Test : Pulse width 300, Duty cycle 2%
2/5
Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved.
W3320
SB
SBW3320
3/5
Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved.
W3320
SB
SBW3320
Resistive Load Switching Test Circuit
Inductive Load Switching & RBSOA Test Circuit
4/5
Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved.
W3320
SB
SBW3320
3P(B) Package Dimension
TO
TO3P(B)
Unit: mm
5/5
Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved.