75N0 8R SFP SFP7 N08R Silicon N-Channel MOSFET Features ■ RDS(on)(Max 15mΩ)@VGS=10V ■ Ultra-low Gate Charge(Typical 80nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(175℃) General Description This power MOSFET is produced in Winsemi with advanced DMOS process, planar stripe. This technology enable power MOSFET to have better characteristics, such as fast switchingtime, low on resistance, low gate charge and especially excellent avalanche characteristics. This Devices are well suited for low voltage application such as automotive, DC/DC Converters, and high efficiency switch for power management in portable and battery operated products G D S TO220 Absolute Maximum Ratings Symbol VDSS ID Value Units Drain Source Voltage Parameter 80 V Continuous Drain Current(@Tc=25℃) 75 A 52.6 A 300 A ±20 V (Note 2) 13100 mJ 75 A 17.3 mJ Continuous Drain Current(@Tc=100℃) IDM Drain Current Pulsed (Note1) VGS Gate to Source Voltage EAS Single Pulsed Avalanche Energy IAR Avalanche current EAR Repetitive Avalanche Energy (Note 2) dv/dt Peak Diode Recovery dv/dt (Note 3) PD 7.3 V/ns Total Power Dissipation(@Tc=25℃) 173 W Derating Factor above 25℃ 1.15 W/℃ 175 -55~150 ℃ 300 ℃ TJ, Tstg Junction Temperature Storage Temperature TL Maximum lead temperature for soldering purposes (for 5 seconds) Thermal Characteristics Symbol Parameter RQJC Thermal Resistance, Junction-to-Case RQcs Case-to-Sink, Flat, Greased Surface RQJA Thermal Resistance, Junction-to-Ambient Min - Value Typ Max - 0.87 - ℃/W ℃/W 0.5 - Units 62.5 ℃/W Rev, B Nov.2009 Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved. T03-3 75N0 8R SFP SFP7 N08R Electrical Characteristics (Tc = 25 25°°C) Characteristics Gate leakage current Gate−source breakdown voltage Drain cut−off current Test Condition Min Type Max Unit IGSS VGS = ±20 V, VDS = 0 V - - ±100 nA V(BR)GSS IG = ±10 μA, VDS = 0 V ±20 - - V VDS = 80 V, VGS = 0 V - - 10 μA VDS = 64V, Tc = 125°°C - - 100 μA ID = 250 μA, VGS = 0 V 80 - - V ID = 1mA, Referenced to 25℃ - 0.08 - V/℃ IDSS Drain−source breakdown voltage Breakdown Symbol Voltage Temperature V(BR)DSS △BVDS/ Coefficient △TJ Gate threshold voltage VGS(th) VDS = 10 V, ID =250 μA 2 - 4 V Drain−source ON resistance RDS(ON) VGS = 10 V, ID = 37.5A - 12 15 mΩ Forward Transconductance gfs VDS=25V, ID = 37.5A - 15 - s Input capacitance Ciss VDS = 25 V, - 2600 3380 Reverse transfer capacitance Crss VGS = 0 V, - 940 1229 Output capacitance Coss f = 1 MHz - 210 275 Rise time Turn−on time tr VDD=40V - 30 70 ton ID =75A - 225 460 tf RG =25 Ω - 165 340 toff VGS =10V - 155 320 - 80 105 - 15 - - 32 - Switching time Fall time Turn−off time Total gate charge (gate−source plus Qg gate−drain) pF ns (Note4,5) VDD =64 V, VGS = 10 V, nC Gate−source charge Qgs Gate−drain (“miller”) Charge Qgd ID =48 A (Note4,5) −Drain Ratings and Characteristics (Ta = 25 Source Source− 25°°C) Characteristics Symbol Test Condition Min Type Max Unit Continuous drain reverse current IDR - - - 75 A Pulse drain reverse current IDRP - - - 300 A Forward voltage (diode) VDSF IDR =75A, VGS = 0 V - - 1.4 V Reverse recovery time trr IDR =75A, VGS = 0 V, - 90 - ns Reverse recovery charge Qrr dIDR / dt = 100 A / μs - 250 - μC Note 1. Repeativity rating: pulse width limited by junction temperature 2. L=19.5mH, IAS=75A, RG=20Ω, Starting TJ=25℃ 3. ISD≤48A, di/dt≤300A/μs, VDD≤BVDSS, Starting TJ=25℃ 4. Pulse Test: Pulse Width≤300μs,Duty Cycle≤2% 5. Essentially independent of operating temperature This transistor is an electrostatic sensitive device Please handle with caution 2/7 Steady, all for your advance 75N0 8R SFP SFP7 N08R Fig. 1 Transfer Characteristics Fig.3 Typical Capacitance Characteristics Fig.2 On-Statet Characteristics Fig.4 On-Resistance Variation vs Drain Current and Gate Voltage Fig.5 On-Resistance Variation vs Junction Temperature Fig.6 Gate Charge Characteristics 3/7 Steady, all for your advance 75N0 8R SFP SFP7 N08R Fig.7 Maximum Safe Operation Area Fig.8 Maximum Drain Current vs Case Temperature Fig.9 Transient Thermal Response Curve 4/7 Steady, all for your advance 75N0 8R SFP SFP7 N08R Fig.10 Gate Test Circuit & Waveform Fig.11 Resistive Switching Test Circuit & Waveform Fig.12 Unclamped Inductive Switching Test Circuit & Waveform 5/7 Steady, all for your advance 75N0 8R SFP SFP7 N08R Fig.13 Peak Diode Recovery dv/dt Test Circuit & Waveform 6/7 Steady, all for your advance 75N0 8R SFP SFP7 N08R TO-220 Package Dimension Unit:mm 7/7 Steady, all for your advance