SFU1N60N Silicon N-Channel MOSFET Features ■1A,600V, RDS(on)(Max 15.0Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 6.1nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi’s advanced planar stripe, VDMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high G rugged avalanche characteristics. This devices is specially well D S suited for high efficiency switch mode power supply. electronic TO251 Lamp ballasts based on half bridge and UPS. Absolute Maximum Ratings Symbol VDSS ID Parameter Value Units Drain Source Voltage 600 V Continuous Drain Current(@Tc=25℃) 1.0 A Continuous Drain Current(@Tc=100℃) 0.62 A 4.0 A ±30 V IDM Drain Current Pulsed (Note1) VGS Gate to Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) 47 mJ EAR Repetitive Avalanche Energy (Note 1) 3.1 mJ dv/dt Peak Diode Recovery dv/dt 4.5 V/ns 30 W 0.24 W/℃ -55~150 ℃ 300 ℃ (Note 3) Total Power Dissipation(@Tc=25℃) PD TJ, Tstg TL Derating Factor above 25℃ Junction and Storage Temperature Maximum lead Temperature for soldering purposes Thermal Characteristics Parameter Symbol RQJC Thermal Resistance, Junction-to-Case RQCS Thermal Resistance, Case-to-Sink RQJA Thermal Resistance, Junction-to-Ambient Min Value Typ Max - - 4.16 ℃/W 0.5 - - ℃/W - - 105 ℃/W Units Rev. C Nov.2008 Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved. P01-3 SFU1N60N Electrical Characteristics (Tc = 25 25°°C) Characteristics Symbol Gate leakage current Gate−source breakdown voltage Drain cut−off current Type Max Unit VGS = ±30 V, VDS = 0 V - - ±100 nA V(BR)GSS IG = ±10 μA, VDS = 0 V ±30 - - V VDS = 600 V, VGS = 0 V - - 10 μA VDS = 480 V, Tc = 125°°C - - 100 μA 600 - - V ID=250μA, Referenced to 25℃ - 0.5 - V/℃ V(BR)DSS ΔBVDSS/ Break Voltage Temperature Coefficient Min IGSS IDSS Drain−source breakdown voltage Test Condition ΔTJ ID = 250 μA, VGS = 0 V Gate threshold voltage VGS(th) VDS = 10 V, ID =250 μA 2 - 4 V Drain−source ON resistance RDS(ON) VGS = 10 V, ID =0.5A - 11 15 Ω Forward Transconductance gfs VDS = 50 V, ID =0.5A - 0.8 - S Input capacitance Ciss VDS = 25 V, - 178 221 Reverse transfer capacitance Crss VGS = 0 V, - 19 27 Output capacitance Coss f = 1 MHz - 3.7 4.8 Rise time tr VDD =300 V, - 15 45 Turn−on time ton ID = 1 A - 46 105 Fall time tf RG=25 Ω - 26 62 Turn−off time toff - 37 82 - 6.1 7.2 - 1.0 - - 3.0 - Switching time Total gate charge (gate−source Qg plus gate−drain) pF ns (Note4,5) VDD = 480 V, VGS = 10 V, nC Gate−source charge Qgs Gate−drain (“miller”) Charge Qgd ID = 1 A (Note4,5) −Drain Ratings and Characteristics (Ta = 25 Source Source− 25°°C) Characteristics Symbol Test Condition Min Type Max Unit Continuous drain reverse current IDR - - - 1.0 A Pulse drain reverse current IDRP - - - 4.0 A Forward voltage (diode) VDSF IDR = 1A, VGS = 0 V - - 1.0 V Reverse recovery time trr IDR = 1A, VGS = 0 V, - 185 - ns Reverse recovery charge Qrr dIDR / dt = 100 A / μs - 0.51 - μC Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=59mH,IAS=1A,VDD=50V,RG=25Ω,Starting TJ=25℃ 3.ISD≤1A,di/dt≤200A/us, VDD<BVDSS,STARTING TJ=25℃ 4.Pulse Test: Pulse Width≤300us,Duty Cycle≤2% 5.Essentially independent of operating temperature. This transistor is an electrostatic sensitive device Please handle with caution 2/7 Copyright @ WinSemi Semiconductor Co., Ltd., All rights reserved. SFU1N60N Fig. 1 On-State Characteristics Fig.3 On-Resistance Variation vs Drain Current Fig.5 On-Resistance Variation vs Junction Temperature Fig.2 Transfer Current Characteristics Fig.4 On-State Current vs Allowable Case Temperature Fig.6 Gate Charge Characteristics 3/7 Copyright @ WinSemi Semiconductor Co., Ltd., All rights reserved. SFU1N60N Fig.7 Maximum Safe Operation Area Fig.8 Maximum Drain Current vs Case Temperature Fig.9 Transient Thermal Response Curve 4/7 Copyright @ WinSemi Semiconductor Co., Ltd., All rights reserved. SFU1N60N Fig.10 Gate Test Circuit & Waveform Fig.11 Resistive Switching Test Circuit & Waveform Fig.12 Unclamped Inductive Switching Test Circuit & Waveform 5/7 Copyright @ WinSemi Semiconductor Co., Ltd., All rights reserved. SFU1N60N Fig.13 Peak Diode Recovery dv/dt Test Circuit & Waveform 6/7 Copyright @ WinSemi Semiconductor Co., Ltd., All rights reserved. SFU1N60N 251 Package Dimension TO TO251 Unit: mm 7/7 Copyright @ WinSemi Semiconductor Co., Ltd., All rights reserved.