WBR13003D High Voltage Fast-Switching NPN Power Transistor Features ◆ Very High Switching Speed ◆ High Voltage Capability ◆ Wide Reverse Bias SOA ◆ Built-in freewheeling diode General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply. Absolute Maximum Ratings Symbol Parameter Test Conditions Value Units VCES Collector-Emitter Voltage VBE = 0 700 V VCEO Collector-Emitter Voltage IB = 0 400 V VEBO Emitter-Base Voltage IC = 0 9.0 V IC Collector Current 1.5 A ICP Collector pulse Current 3.0 A IB Base Current 0.75 A IBM Base Peak Current 1.5 A tP = 5ms Total Dissipation at Tc = 25℃ 40 Total Dissipation at Ta = 25℃ 1.2 Operation Junction emperature - 40 ~ 150 ℃ Storage Temperature - 40 ~ 150 ℃ PC TJ TSTG W Thermal Characteristics Symbol Parameter RQJC Thermal Resistance, Junction-to-Case RQJA Thermal Resistance, Junction-to-Ambient Value Units 3.12 ℃/W 89 ℃/W 1/ 5 . Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved WBR13003D C) Electrical Characteristics (Tc = 25 25°C) Symbol Parameter Test Conditions Value Min Typ Units Max BVCBO Collector-Base Breakdown Voltage Ic=0.5mA,Ie=0 700 BVCEO Collector-Base Breakdown Voltage Ic=10mA,Ib=0 400 - - V VCE(sat) Collector-Emitter Saturation Voltage Ic=200mA,Ib=100mA - - 1.6 V VBE(sat) Base-Emitter Saturation Voltage Ic=200mA,Ib=100mA - - 1.2 V ICBO Collector-Base Cutoff Current Vcb=550V,Ie=0mA - - 10 μA ICEO Collector-Emitter Cutoff Current Vce=400V,Ib=0mA - - 20 μA IEBO Emitter- Base Cutoff Current Veb=9V,Ic=0mA - - 20 μA hFE DC Current Gain Vce=20V,Ic=20mA 10 - 40 Vce=5V, Ic=1mA 9 - - - - 3 - - 0.8 ts Storage Time VCC=250V tf Fall Time IC=5 IB V ㎲ IB1=- IB2=0.04A Note: Pulse Test : Pulse width 300, Duty cycle 2% 2/ 5 . Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved WBR13003D 3/ 5 . Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved WBR13003D Resistive Load Switching Test Circuit Inductive Load Switching & RBSOA Test Circuit 4/ 5 . Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved WBR13003D TO-126 Package Dimension Dim mm Min Typ lnch Max Min Typ Max A 7.5 7.9 0.295 0.311 B 10.8 11.2 0.425 0.441 C 14.2 14.7 0.559 0.579 D 2.7 2.9 0.106 0.114 E 3.8 0.150 F 2.5 0.098 G 1.2 1.5 0.047 0.059 H 2.3 0.091 I 4.6 0.181 J 0.48 0.62 0.019 0.024 K 0.7 0.86 0.028 0.034 L 1.4 0.055 Φ 3.2 0.126 5/ 5 . Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved