WCD6C60S Silicon Controlled Rectifiers Features � Repetitive Peak Off-State Voltage : 600V � R.M.S On-State Current ( IT(RMS)= 6 A ) � Low On-State Voltage (1.6V(Max.) @ ITM) General Description Sensitive gate triggering SCR is suitable for the application where requiring high bidirectional blocking voltage capability and also suitable for over voltage protection ,motor control circuit in power tool, inrush current limit circuit and heating control system. Absolute Maximum Ratings (T = 25°C unless otherwise specified) J Symbol Parameter VDRM Condition Repetitive Peak Off-State Voltage Ratings Units 600 V Tc =110 °C 3.8 A Tc =110 °C 6 A 66 A Average On-State Current(180° IT(AV) Conduction Angle) R.M.S On-State Current(180° IT(RMS) Conduction Angle) 1/2 Cycle, 60Hz, Sine ITSM Surge On-State Current WaveNon-Repetitive I 2t I2t for Fusing t =10ms 21 A2s di/dt Critical rate of rise of on-state current F=60Hz,Tj=125 °C 50 A/㎲ PGM Forward Peak Gate Power Dissipation 5 W 0.5 W Forward Average Gate Power PG(AV) Tj=125 °C Dissipation IFGM Forward Peak Gate Current 2 A VRGM Reverse Peak Gate Voltage 5.0 V TJ Operating Junction Temperature -40~125 °C °C TSTG Storage Temperature -40~150 °C °C Thermal Characteristics Parameter Symbol RθJc Thermal Resistance Junction to Case(DC) RθJA Thermal Resistance Junction to Ambient(DC) Rev.A Sep.2010 Copyright@WinSemi Semiconductor Co., Ltd., All right reserved. Value Units 3.12 ℃/W 89 ℃/W WCD6C60S Electrical Characteristics (TC=25℃ unless otherwise noted) Symbol Parameter Test Conditions IDRM Repetitive Peak Off-State Current VTM Peak On-State Voltage (1) IGT Gate Trigger Current (2) VGT Gate Trigger Voltage (2) VGD Non-Trigger Gate Voltage (1) dv/dt Critical Rate of Rise Holding Current IL Latching Current Typ Max TC=25℃ - - 10 μA TC=125℃ - - 200 μA - - 1.6 V - - 0.2 mA - - 1.5 V VAK=6V(DC),RL=10Ω TC=125℃ VD=6V(DC),RL=10Ω TC=125℃ Off-State Units Min ITM=9A, tp=380㎲ Voltage IH VAK=VDRM Value VAK=12V,RL=100Ω TC=125℃ 0.2 V Linear slope up to VD=67%VDRM, gate open 200 - - V/㎲ - - 20 mA - 50 - mA TJ=125℃ IT=100mA, Gate open TC=25℃ IG=1.2 IGT *Notes: 1.Pulse Width ≤1.0ms,Duty cycle≤1% 2.RGK Current not Included in measurement. 2/5 Steady, all for your advance WCD6C60S Fig.1 Fig.1Average on -State current versus case temperature Fig. 3Relative variation of gate trigger current and holding current versus junction temperature Fig.5 Fig.5Correlation between Maximum average Power dissipation and Maximum allowable temperatures (tamb and tcase )for different thermal resistances heatsink+contact. Fig .2 Correlation between maximum average power dissipation and maximum allowable temperatures (tamb and tcase)for different thermal resistances heatsink+contact Fig. 4 Maximum permissible non -repetitive peak On-state current ITSM,versus number of cycles,for Sinusoidal currents.f=60Hz Fig.6 Non-repetitive surge peak on-state current for a sinusoidal pulse with width Tp≤10ms and corresponding value of l2t 3/5 Steady, all for your advance WCD6C60S 7 On-state characteristics(maximum values) Fig. Fig.7 Fig.8 Fig.8Transient thermal impedance Zth j-mb,Versus Pulse width tp 4/5 Steady, all for your advance WCD6C60S TO25 2 Package Dimension TO252 Unit: mm 5/5 Steady, all for your advance