WCF10C60 Silicon Controlled Rectifiers Features � Repetitive Peak Off-State Voltage:600V � R.M.S On-State Current (IT(RMS)=10A) � Low On-State Voltage(1.4V(Typ.)@ITM) � Isolation Voltage(VISO=1500V AC) General Description Standard gate triggering SCR is fully isolated package suitable for the application where requiring high bidirectional blocking voltage capability and also suitable for over voltage protection ,motor control circuit in power tool, inrush current limit circuit and heating control system Absolute Maximum Ratings (TJ= 25°C unless otherwise specified) Parameter Symbol Condition Value Units 600 V VDRM Repetitive Peak Off-State Voltage IT(AV) Average On-State Current Half Sine Wave:TC =86 °C 6.4 A IT(RMS) R.M.S On-State Current 180°conduction Angle 10 A ITSM Surge on-state Current 110 A 60 A 2s 1/2 Cycle,60Hz,Sine Wave Non-Repetitive I2t I2t for Fusing t=8.3ms di/dt Critical rate of rise of on-state current 50 A/㎲ PGM Forward Peak Gate Power Dissipation 5 W 0.5 W PG(AV) Forward Average Gate Power Dissipation IFGM Forward Peak Gate Current 2 A VRGM Reverse Peak Gate Voltage 5.0 V VISO Isolation Breakdown Voltage(R.M..S) 1500 V Operating Junction Temperature -40~125 °C Storage Temperature -40~150 °C TJ TSTG A,C.1minute Thermal Characteristics Symbol Parameter Value Min Typ Max Units RθJc Thermal Resistance Junction to Case - - 3.8 ℃/W RθJA Thermal Resistance Junction to Ambient - - 60 ℃/W Rev.A Oct.2010 Copyright@WinSemi Semiconductor Co., Ltd., All right reserved. WCF10C60 Electrical Characteristics (TC=25℃ ,unless otherwise noted) Symbol IDRM Parameter Test Conditions Repetitive Peak Off-State VAK=VDRM Current VTM Peak On-State Voltage (1) IGT Gate Trigger Current (2) VGT Gate Trigger Voltage (2) VGD Non-Trigger Gate Voltage (1) dv/dt IH TC=25℃ - - 10 μA TC=125℃ - - 200 μA - 1.4 1.6 V - - 15 mA - - 1.5 V ITM=20A, tp=380㎲ VAK=6V(DC),RL=10Ω TC=25℃ VD=6V(DC),RL=10Ω TC=25℃ Critical Rate of Rise Off-State Voltage Value Units Min Typ Max VAK=12V,RL=100Ω TC=125℃ 0.2 V Linear slope up to VD=67% VDRM, gate open 200 - - V/㎲ - - 20 mA TJ=125℃ IT=100mA, Gate Open Holding Current TC=25℃ *Notes: 1 Pulse Width ≤1.0ms,Duty cycle≤1% 2 RGK Current is not Included in measurement. 2/5 Steady, all for your advance WCF10C60 Fig.1Gate Characteristics Fig .2 Maximum Case Temperature Fig. 3 Typical Forward Voltage Fig. 4 Thermal Response Fig.5Typical Gate Trigger Voltage vs.Junction Temperature Fig.6Typical Gate Trigger current vs.Junction Temperature 3/5 Steady, all for your advance WCF10C60 Fig.7 Typical Holding Current Fig.8 Power Disspation 4/5 Steady, all for your advance WCF10C60 TO TO--220F Package Dimension Unit: mm 5/5 Steady, all for your advance