WFP18N20
Silicon N-Channel MOSFET
Features
�
18A,200V,RDS(on)(Max 0.18Ω)@VGS=10V
�
Ultra-low Gate Charge(Typical 40nC)
�
Fast Switching Capability
�
100%Avalanche Tested
�
Maximum Junction Temperature Range(150℃)
General Description
This Power
MOSFET is produced using Winsemi's advanced
planar stripe,DMOS technology. This latest technology has
been
especially designed to minimize on -state resistance,have a high
rugged avalanche characteristics. This devices is specially well
suited for low voltage applications such as automotive, high
efficiency switching for DC/DC converters,and DC motor control.
Absolute Maximum Ratings
Symbol
VDSS
Parameter
Value
Units
Drain Source Voltage
200
V
Continuous Drain Current(@Tc=25℃)
18
A
Continuous Drain Current(@Tc=100℃)
12
A
72
A
±30
V
ID
IDM
Drain Current Pulsed
(Note1)
VGS
Gate to Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note2)
580
mJ
EAR
Repetitive Avalanche Energy
(Note1)
13
mJ
dv/dt
Peak Diode Recovery dv /dt
(Note3)
5
V/ ns
Total Power Dissipation(@Tc=25℃)
140
W
Derating Factor above 25℃
0.78
W/℃
-55~150
℃
300
℃
PD
TJ,Tstg
TL
Junction and Storage Temperature
Channel Temperature
Thermal Characteristics
Symbol
Parameter
Value
Min
Typ
Max
Units
RQJC
Thermal Resistance , Junction -to -Case
-
-
0.89
℃/W
RACS
Thermal Resistance, Case- to -Sink
-
0.5
-
℃/W
RQJA
Thermal Resistance , Junction-to -Ambient
-
-
62.5
℃/W
Rev.A Sep.2010
Copyright@WinSemi Semiconductor Co., Ltd., All right reserved.
WFP18N20
Electrical Characteristics(Tc=25℃)
Characteristics
Symbol
Gate leakage current
Test Condition
Min
Type
Max
Unit
IGSS
VGS=±30V,VDS=0V
-
-
±100
nA
V(BR)GSS
IG=±10 µA,VDS=0V
±30
-
-
V
IDSS
VDS=200V,VGS=0V
-
-
1
µA
V(BR)DSS
ID=250 µA,VGS=0V
200
-
-
V
Gate threshold voltage
VGS(th)
VDS=10V,ID=250 µA
2
-
4
V
Drain -source ON resistance
RDS(ON)
VGS=10V,ID=11A
-
-
0.18
Ω
Forward Transconductance
gfs
VDS=50V,ID=11A
6.7
-
-
S
Input capacitance
Ciss
VDS=25V,
-
-
1300
Reverse transfer capacitance
Crss
VGS=0V,
-
-
430
Output capacitance
Coss
f=1MHz
-
-
130
tr
VDD=100V,
-
14
-
ton
ID=18A，
-
51
-
RG=9.1Ω，
-
45
-
-
36
-
-
40
70
-
-
13
-
-
39
Min
Type
Max
Unit
Gate-source breakdown voltage
Drain cut -off current
Drain -source breakdown voltage
Rise time
Turn-on time
Switching time
pF
ns
Fall time
tf
Turn-off time
toff
Total gate charge(gate-source
RD=5.4Ω
(Note4,5)
VDD=160V,
Qg
plus gate-drain)
VGS=10V,
nC
Gate-source charge
Qgs
Gate-drain("miller") Charge
Qgd
ID=18A
(Note4,5)
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Symbol
Test Condition
Continuous drain reverse current
IDR
-
-
-
18
A
Pulse drain reverse current
IDRP
-
-
-
72
A
Forward voltage(diode)
VDSF
IDR=18A,VGS=0V
-
1.4
2.0
V
Reverse recovery time
trr
IDR=18A,VGS=0V,
-
300
610
ns
Reverse recovery charge
Qrr
dIDR / dt =100 A / µs
-
3.4
7.1
µC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=18.5mH IAS=18A,VDD=50V,RG=0Ω ,Starting TJ=25℃
3.ISD≤18A,di/dt≤300A/us,VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/7
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WFP18N20
Fig.1 On-State Characteristics
Fig.3 On -Resistance Variation vs
Fig.2 Transfer characteristics
Fig.4 Maximum Avalanche Energy
Drain Current
vs On-State Current
Fig.5 On-Resistance Variation vs
Fig.6 Gate Charge Characteristics
Junction Temperature
3/7
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WFP18N20
Fig.7 Maximum Safe Operation Area
Fig.8 Maximum Drain Current vs
Case Temperature
Fig.9 Transient Thermal Response curve
4/7
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WFP18N20
Fig.10 Gate Test circuit & Waveform
Fig.11 Resistive Switching Test Circuit & Waveform
Fig.12 Uncamped Inductive Switching Test Circuit & Waveform
5/7
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WFP18N20
Fig.13 Peak Diode Recovery dv/dt Test Circuit & Waveform
6/7
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WFP18N20
TO-220 Package Dimension
Unit:mm
7/7
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