30 WFP6 FP63 Silicon N-Channel MOSFET Features ■ 9A, 200V, RDS(on)(Max 0.4Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 22nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well G D suited for low voltage applications such as automotive, high S TO220 efficiency switching for DC/DC converters, and DC motor control. Absolute Maximum Ratings Symbol VDSS Parameter Value Units 200 V 9 A 5.7 A 36 A ±30 V Drain Source Voltage Continuous Drain Current(@Tc=25℃) ID Continuous Drain Current(@Tc=100℃) IDM Drain Current Pulsed (Note1) VGS Gate to Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) 160 mJ EAR Repetitive Avalanche Energy (Note 1) 7.2 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns Total Power Dissipation(@Tc=25℃) PD 72 W 0.57 W/℃ -55~150 ℃ 300 ℃ Derating Factor above 25℃ TJ, Tstg Junction and Storage Temperature TL Maximum lead Temperature for soldering purposes Thermal Characteristics Symbol Parameter Min Value Typ Max Units RQJC Thermal Resistance, Junction-to-Case - - 1.74 ℃/W RQCS Thermal Resistance, Case to Sink - 0.5 - ℃/W RQJA Thermal Resistance, Junction-to-Ambient - - 62.5 ℃/W Rev, C Dec.2008 Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved. T01-3 WFP630 Electrical Characteristics (Tc = 25 25°°C) Characteristics Symbol Test Condition Min Type Max Unit Gate leakage current IGSS VGS = ±30 V, VDS = 0 V - - ±100 nA Gate−source breakdown voltage V(BR)GSS IG = ±10 μA, VDS = 0 V ±30 - - V Drain cut−off current IDSS VDS = 200 V, VGS = 0 V - - 10 μA Drain−source breakdown voltage V(BR)DSS ID = 250 μA, VGS = 0 V 200 - - V ID=250μA, Referenced to 25℃ - 0.2 - V/℃ ΔBVDSS/ Break Voltage Temperature Coefficient ΔTJ Gate threshold voltage VGS(th) VDS = 10 V, ID =250 μA 2 - 4 V Drain−source ON resistance RDS(ON) VGS = 10 V, ID = 4.5A - - 0.4 Ω Forward Transconductance gfs VDS = 50 V, ID = 4.5A - 7.05 - S Input capacitance Ciss VDS = 25 V, - 500 720 Reverse transfer capacitance Crss VGS = 0 V, - 85 110 Output capacitance Coss f = 1 MHz - 22 29 VDD =100 V, - 11 30 - 70 150 - 60 130 - 65 140 - 22 29 - 3.6 - - 10 - Test Condition Switching time Rise time tr Turn−on time ton Fall time tf Turn−off time toff Total gate charge (gate−source Qg plus gate−drain) ID = 9 A RG=12 Ω (Note4,5) VDD = 160 V, pF ns VGS = 10 V, Gate−source charge Qgs Gate−drain (“miller”) Charge Qgd ID = 9 A (Note4,5) nC −Drain Ratings and Characteristics (Ta = 25 Source Source− 25°°C) Characteristics Symbol Min Type Max Unit Continuous drain reverse current IDR - - - 9 A Pulse drain reverse current IDRP - - - 36 A Forward voltage (diode) VDSF IDR = 9 A, VGS = 0 V - 1.4 1.5 V Reverse recovery time trr IDR = 9A, VGS = 0 V, - 140 - ns Reverse recovery charge Qrr dIDR / dt = 100 A / μs - 1.1 2.2 μC Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=500uH,IAS=9 A,VDD=50V,RG=0Ω,Starting TJ=25℃ 3.ISD≤9A,di/dt≤300A/us, VDD<BVDSS,STARTING TJ=25℃ 4.Pulse Test: Pulse Width≤300us,Duty Cycle≤2% 5.Essentially independent of operating temperature. This transistor is an electrostatic sensitive device Please handle with caution 2/7 Copyright @ WinSemi Semiconductor Co., Ltd., All rights reserved. WFP630 Fig. 1 On-State Characteristics Fig.3 On-Resistance Variation vs Drain Current Fig.5 On-Resistance Variation vs Junction Temperature Fig.2 Transfer Characteristics Fig.4 Body Diode Forward Voltage Variation vs. Source Current and Temperature Fig.6 Gate Charge Characteristics 3/7 Copyright @ WinSemi Semiconductor Co., Ltd., All rights reserved. WFP630 Fig.8 Capacitance Characteristics Fig.9 Breakdown Voltage Variation vs. Temperature Fig.9 Maximum Safe Operation Area Fig.10 Maximum Drain Current vs Case Temperature Fig.11 Transient Thermal Response Curve 4/7 Copyright @ WinSemi Semiconductor Co., Ltd., All rights reserved. WFP630 Fig.10 Gate Test Circuit & Waveform Fig.11 Resistive Switching Test Circuit & Waveform Fig.12 Unclamped Inductive Switching Test Circuit & Waveform 5/7 Copyright @ WinSemi Semiconductor Co., Ltd., All rights reserved. WFP630 Fig.13 Peak Diode Recovery dv/dt Test Circuit & Waveform 6/7 Copyright @ WinSemi Semiconductor Co., Ltd., All rights reserved. WFP630 TO-220 Package Dimension Unit: mm 7/7 Copyright @ WinSemi Semiconductor Co., Ltd., All rights reserved.