WFY4101 Trench Power MOSFET −23 −20 V, Single P−Channel, SOT SOT− Features ■ -3.2A, -20V, RDS(on)(Max 85mΩ)@VGS=-4.5V ■ −1.8 V Rated for Low Voltage Gate Drive ■ SOT-23 Surface Mount for Small Footprint ■ Single Pulse Avalanche Energy Rated General Description D This Power MOSFET is produced using Winsemi’s advanced MOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for Load/Power Management for Portables and Computing, Charging Circuits and Battery Protection G S SOT-23 Absolute Maximum Ratings Symbol Parameter VDSS Drain Source Voltage ID Continuous Drain Current(Note 1) Value Units -20 V Tc=25℃ −2.4 Tc=85℃ Tc=25℃ t=10s -1.7 -3.2 0.73 1.25 -1.8 -1.3 0.42 -7.5 ±8 V C=100pF,R S = 1500Ω 225 V -55~150 ℃ 260 ℃ Steady State t≤10s Steady State t≤10s PD Total Power Dissipation(Note 1) ID Continuous Drain Current(Note 2) PD IDM Total Power Dissipation(Note 2) Drain Current Pulsed VGS Gate to Source Voltage ESD ESD Capability (Note 3) TJ, Tstg Junction and Storage Temperature TL Maximum lead Temperature for soldering purposes Steady State Tc=25℃ Tc=25℃ Tc=85℃ Tc=25℃ A W A W A Maximum ratings are those values beyond which device damage can occur.Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. Thermal Characteristics Symbol RQJA RQJA RQJA Parameter Thermal Resistance, Junction-to-Ambient(Note 1) Thermal Resistance, Junction-to-Ambient(Note 1) Thermal Resistance, Junction-to-Ambient(Note 2) Value Min Typ Max - - 170 110 300 Units ℃/W ℃/W ℃/W Note 1: Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces) Note 2: Surface−mounted on FR4 board using the minimum recommended pad size. Note 3: ESD Rating Information: HBM Class 0 Rev. A Mar.2010 Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved. P02-1 WFY4101 Electrical Characteristics (Tc = 25°C) Characteristics Symbol Test Condition Min Type Max Unit Gate leakage current(Note 4) IGSS VGS = ±8 V, VDS = 0 V - - ±100 nA Drain cut−off current(Note 4) IDSS VDS = -16 V, VGS = 0 V - - -1 μA V(BR)DSS ID = -250 μA, VGS = 0 V -20 - - V VGS(th) VDS = VDS ID =-250 μA -0.40 -0.72 -1.5 V - 70 85 VGS = −2.5 V, ID = −1.3 A 90 120 VGS = −1.8 V, ID = −0.9 A 112 200 Drain−source breakdown voltage Gate threshold voltage VGS = −4.5 V, ID = −1.6 A Drain−source ON resistance RDS(ON) Forward Transconductance gfs VDS = −5.0 V, ID = −2.3 A - 75 - Input capacitance Ciss VDS = -10 V, - 675 - Reverse transfer capacitance Crss VGS = 0 V, - 75 - Output capacitance Coss f = 1 MHz - 100 - tr VGS = −4.5 V, - 12.6 - ton VDS = −10 V, - 7.5 - ID = −1.6 A, - 21.0 - RG = 6.0 Ω - 30.2 - - 7.5 8.5 - 1.2 - Rise time Switching time Turn−on time (Note 5) Fall time Turn−off time tf toff Total gate charge (gate−source plus Qg gate−drain) S pF ns VGS = −4.5 V, VDS = −10 V, nC Gate−source charge Qgs Gate−drain (“miller”) Charge Qgd - 2.2 - RG - 6.5 - Reverse Recovery Charge mΩ ID = −1.6 A Ω Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Type Max Unit Continuous drain reverse current IDR - - - -2.4 A Pulse drain reverse current IDRP - - - -7.5 A Forward voltage (diode) VDSF - -0.82 -1.2 V Reverse recovery time trr - 12.8 15 ns Charge Time Discharge Time Reverse recovery charge ta tb IDR = -2.4A, VGS = 0 V IDR = -2.4A, VGS = 0 V, 9.9 ns 3.0 ns dIDR / dt = 100 A / μs Qrr - 1008 - μC Note 4: Pulse Test: Pulse Width ≤300μs, Duty Cycle 3 2%. Note 5: Switching characteristics are independent of operating junction temperature. This transistor is an electrostatic sensitive device Please handle with caution 2/5 Steady, all for your advance WFY4101 Fig. 1 On-State Characteristics −Resistance vs. Drain Current and Fig.3 On On− Fig.2 Transfer Current Characteristics Fig.4 Diode Forward Voltage vs. Current Temperature Fig.5 On-Resistance Variation vs Junction Temperature Fig.6 Gate Charge Characteristics 3/5 Steady, all for your advance WFY4101 Fig.7 Resistive Switching Time Variation vs. Gate Resistance 9 Drain −to −Source Leakage Current Fig. Fig.9 Drain− to− vs. Voltage Fig.8 Maximum Drain Current vs Case Temperature 10 On −Resistance vs. Drain Current and Fig. Fig.10 On− Temperature 4/5 Steady, all for your advance WFY4101 SOT-23 Package Dimension 5/5 Steady, all for your advance