WINSEMI WTF4A60

WTF4A60
Bi-Directional Triode Thyristor
Features
◆
Repetitive Peak Off-State Voltage : 600V
◆
R.M.S On-State Current ( IT(RMS)= 4 A )
◆
Low On-State Voltage (1.6V(Typ.) @ ITM)
◆
High Commutation dv/dt
◆
Isolation Voltage ( VISO = 1500V AC )
◆
High Junction temperature(TJ=150℃)
General Description
Standard gate triggering Triac is suitable for direct coupling to
TTL, HTL, CMOS and application such as various logic
A1
A2
functions, low power AC switching applications, such as fan
Absolute Maximum Ratings (T =
J
Symbol
VDRM /VRRM
25°C unless otherwise specified)
Parame
Repetitive Peak ter
Off-State Voltage
IT(RMS)
R.M.S On-State Current
ITSM
Surge On-State Current
Condition
2
I2t
PGM
Peak Gate Power Dissipation
Ratings Units
TJ = 105 °C
One cycle, Peak value,
It
TO220F
G
speed, small light controllers and home appliance equipment.
non-repetitive full cycle
600
V
4.0
A
50Hz
30
60Hz
31
A
5.1
A2 s
5
W
1
W
4.0
A
7.0
V
PG(AV)
Average Gate Power Dissipation
TJ = 125 °C
IGM
Peak Gate Current
TJ = 125 °C
VGM
Peak Gate Voltage
TJ
Operating Junction Temperature
-40~+150
℃
TSTG
Storage Temperature
-40~+150
℃
Thermal Characteristics
Symbol
Parameter
Value
Units
RθJc
Thermal Resistance Junction to Case(DC)
4
℃/W
RθJA
Thermal Resistance Junction to Ambient(DC)
60
℃/W
Jan 2009. Rev. 0
Copyright @WinSemi Semiconductor Co.,Ltd.,All rights reserved.
T02-1
4A60
WTF
TF4
Electrical Characteristics (TC=25℃
Characteristics
Symbol
IDRM/IRRM
unless otherwise noted)
Typ.
Max
Unit
off-state leakage current
TJ=25℃
-
-
5
μA
(VAK= VDRM/VRRM Single phase, half wave)
TJ=125℃
-
-
1
mA
-
1.2
1.6
V
T2+,G+
-
-
35
T2+,G-
-
-
35
T2-,G-
-
-
35
T2+,G+
-
-
1.5
T2+,G-
-
-
1.5
T2-,G-
-
-
1.5
TJ=125℃
0.2
-
-
V
TJ=125℃
400
-
-
V/μs
VTM
Forward “On” voltage (IT=5A, Inst. Measurement)
IGT
Gate trigger current (continuous dc)
(VAK = 6 Vdc, RL = 10 Ω)
Note:1
VGT
Min
Gate Trigger Voltage (Continuous dc) )
(VAK = 6 Vdc, RL = 10 Ω)
Note:1
mA
V
Gate threshold Voltage
VGD
VD=1/2VDRM, RL = 3.3K Ω
Critical Rate of Rise of Off-State Voltage at Commutation
dv/dt
(VD=0.67VDRM ;gate open)
Note:2
IH
Holding Current
-
-
35
mA
IL
latching current
-
-
60
mA
Note 1: minimum IGT is guaranted at 5% of IGT max.
2: for both polarities of A2 referenced to A1.
2/5
Steady, all for your advance
advance..
4A60
WTF
TF4
3/5
Steady, all for your advance
advance..
4A60
WTF
TF4
4/5
Steady, all for your advance
advance..
4A60
WTF
TF4
220F Package Dimension
TO
TO220F
Unit: mm
5/5
Steady, all for your advance
advance..