GaAs Schottky Diodes ® TM Low RS Series Pair MS8350 – P2819 Dimensions Size: 28 x 19 mils Thickness: 5 mils Bond Pad Size: 5 x 5 mils Features ● Capacitance (65 fF Typ.) ● Low Series Resistance (3 Typ.) ● Cut-Off Frequency > 500 GHz ● Large Gold Bond Pads Description Specifications @ 25°C (Per Junction) ● VF (1 mA): 650–750 mV ● VF (1 mA): 10 mV Max. ● RS (10 mA): 7 Max. ● IR (3 V): 10 A Max. ● CT (0 V): 80 fF Max. Maximum Ratings Insertion Temperature 250°C for 10 Seconds Incident Power +20 dBm @ 25°C Forward Current 15 mA @ 25°C Reverse Voltage 3V Operating Temperature -55°C to +125°C Storage Temperature -65°C to +150°C Copyright 2008 Rev: 2009-05-11 The MS8350 is a GaAs flip chip series pair Schottky device designed for use as balanced mixer elements at microwave and millimeter wave frequencies. Their high cut-off frequency insures good performance at frequencies to 100 GHz. Applications include, transceivers, digital radios and automotive radar detectors. These flip chip devices incorporate Microsemi’s expertise in GaAs material processing, silicon nitride protective coatings and high temperature metalization. They have large, 5 x 5 mil, bond pads for ease of insertion. The MS8350 is priced for high volume commercial and industrial applications Microsemi Microwave Products 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 Page 1 GaAs Schottky Diodes ® TM Low RS Series Pair MS8350 – P2819 P2819 INCHES DIM MIN. MM MAX. MIN. MAX. A 0.0275 0.0285 0.698 0.724 B 0.0185 0.0195 0.470 0.495 C 0.0046 0.0056 0.117 0.142 D 0.0046 0.0056 0.117 0.142 E 0.0195 0.0205 0.495 0.521 F 0.0050 0.0060 0.127 0.152 G 0.0045 0.0055 0.114 0.140 H 0.0105 0.0115 0.267 0.292 J 0.0095 0.0105 0.241 0.267 Spice Model Parameters (Per Junction) IS RS A 3.2 x10-13 3 Copyright 2008 Rev: 2009-05-11 N 1 TT CJ0 CP Sec pF pF 0 0.045 0.02 M EG VJ BV 0.50 IBV eV V V A 1.42 0.85 4 1 x 10-5 Microsemi Microwave Products 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 Page 2