7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE: (561) 842-0305 FAX: (561) 845-7813 2N2151 APPLICATIONS: • • Fast Switching High Frequency Switching and Amplifying FEATURES: • • High Reliability Greater Gain Stability 5 Amp, 100V, Planar, NPN Power Transistors JAN, JANTX DESCRIPTION: These power transistors are produced by PPC's DOUBLE DIFFUSED PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas. They are intended for use in Commercial, Industrial, and Military power switching, amplifier, and regulator applications. Ultrasonically bonded leads and controlled die mount techniques are utilized to further increase the SOA capability and inherent reliability of these devices. The temperature range to 200° C permits reliable operation in high ambients, and the hermetically sealed package insures maximum reliability and long life. TO-59 ABSOLUTE MAXIMUM RATINGS SYMBOL VCBO* VCEO* VEBO* IC * IC * IB * T STG* T J* * PT * θ JC CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Collector Current Continuous Collector Current Continuous Base Current Storage Temperature Operating Junction Temperature Lead Temperature 1/16" From Case for 10 Sec. Power Dissipation T A = 25° C T C = 100° C Thermal Resistance Junction to Case * Indicates JEDEC registered data. MSC0942A.DOC 11-03-98 VALUE UNITS 150 100 8 10 5 2 -65 to 200 -65 to 200 230 V V V A A A °C °C °C 2 30 W W 3.33 ° C/W 2N2151 ELECTRICAL CHARACTERISTICS (25° Case Temperature Unless Otherwise Noted) SYMBOL CHARACTERISTIC BVCBO* Collector-Base Voltage BVCEO* BVEBO* ICEO* IC = 100 µAdc, Cond. D 150 ---- Vdc Collector-Emitter Voltage (Note 1) IC = 50 mAdc, Cond. D 100 ---- Vdc Emitter-Base Voltage IE = 2 µAdc, Cond. D VCE = 120 Vdc Cond. D 8 ---- Vdc ---- 5 VCE = 120 Vdc, VEB = 0.5 Vdc, Cond. A VCE = 120 Vdc, VEB = 0.5 Vdc, Cond. A TA = 150° C VCB = 120 Vdc, Cond. D ------- 5 100 µ Adc µA ---- 5 µ Adc IC = 1 Adc, VCE = 5 Vdc IC = 0.5 Adc, VCE = 5 Vdc IC = 0.1 Adc, VCE = 5 Vdc 40 40 40 120 120 ---- ---------- IC = 0.1 Adc, VCE = 30 Vdc, f = 1 KHz 40 160 ---- IC = 1 Adc, IB = 0.1 Adc ---- 1.0 Vdc IC = 1 Adc, IB = 0.1 Adc ---- 1.2 Vdc IC = 1 Adc, VCE = 2 Vdc ---- 1.2 Vdc IC = 1 Adc, VCE = 30 Vdc, f = 10 MHz 10 70 MHz VCB = 20 Vdc, 1E = 0, f = 1 MHz ---- 160 pf Collector-Emitter Cutoff Current ICBO* Collector-Base Cutoff Current VCE(sat)* VBE(sat)* VBE(on)* fT * Cob* Units Max Collector-Emitter Cutoff Current hFE* VALUE Min. ICEX* hFE* TEST CONDITIONS DC Current Gain (Note 1) AC Current Gain Collector Saturation Voltage (Note 1) Base Saturation Voltage (Note 1) Base On-Voltage (Note 1) Gain-Bandwidth Product Output Capacitance Note 1: Pulse Test: PW = 300µ s, Duty Cycle ≤ 2%. * Indicates JEDEC registered data. MSC0942A.DOC 11-03-98 µ Adc 2N2151 PACKAGE MECHANICAL DATA .185 [4.70] .215 [5.46] .424 [10.77] .437 [11.10] Ø.055 [1.40] +.010 [.254] -.015 [.381] Ø.318 [8.07] Ø.380 [9.65] .570 [14.48] .763 [19.38] .320 [8.13] .468 [11.88] .090 [2.28] .150 [3.81] NOTE: DIMENSIONS IN [ ] = MILLIMETERS MSC0942A.DOC 11-03-98 .400 [10.16] .455 [11.56] ALL JEDEC DIMENSIONS AND NOTES APPLY