FMMT620 SuperSOT™ 80V NPN SILICON LOW SATURATION TRANSISTOR SUMMARY VCEO=80V; RSAT = 90m ; IC= 1.5A DESCRIPTION Enhancing the existing SuperSOT range this 80V NPN transistor utilises the Zetex matrix structure combined with advanced assembly techniques. Users are provided with high Hfe and very low sat performance ensuring low on state losses. SOT23 FEATURES • Extremely Low Equivalent On Resistance • Extremely Low Saturation Voltage • hFE characterised up to 3.0A • IC=1.5A Continuous Collector Current • SOT23 package APPLICATIONS • DC - DC Modules • Power Management Functions • CCFL Backlighting Inverters • Motor control and drive functions E C B ORDERING INFORMATION DEVICE REEL SIZE (inches) TAPE WIDTH (mm) QUANTITY PER REEL FMMT620TA 7 8mm embossed 3000 units FMMT620TC 13 8mm embossed 10000 units Top View DEVICE MARKING 620 ISSUE 2 - JUNE 2006 1 SEMICONDUCTORS FMMT620 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL LIMIT UNIT Collector-Base Voltage V CBO 80 V Collector-Emitter Voltage V CEO 80 V Emitter-Base Voltage V EBO 5 V Peak Pulse Current I CM 5 A Continuous Collector Current IC 1.5 A Base Current IB 500 mA Power Dissipation at TA=25°C (a) Linear Derating Factor PD 625 5 mW mW/°C Power Dissipation at TA=25°C (b) Linear Derating Factor PD 806 6.4 mW mW/°C Operating and Storage Temperature Range T j :T stg -55 to +150 °C THERMAL RESISTANCE PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a) R θJA 200 °C/W Junction to Ambient (b) R θJA 155 °C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t⭐5 secs. ISSUE 2 - JUNE 2006 SEMICONDUCTORS 2 FMMT620 TYPICAL CHARACTERISTICS 0.7 Max Power Dissipation (W) IC Collector Current (A) 10 1 DC 1s 100ms 100m 10ms 1ms 100µs Single Pulse Tamb=25°C 10m 100m 1 10 100 VCE Collector-Emitter Voltage (V) 0.5 0.4 0.3 0.2 0.1 0.0 0 20 40 60 80 100 120 140 160 Temperature (°C) Safe Operating Area Thermal Resistance (°C/W) 0.6 Derating Curve 200 150 D=0.5 100 50 D=0.2 Single Pulse D=0.05 D=0.1 0 100µ 1m 10m 100m 1 10 100 1k Pulse Width (s) Transient Thermal Impedance ISSUE 2 - JUNE 2006 3 SEMICONDUCTORS FMMT620 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER SYMBOL MIN. TYP. Collector-Base Breakdown Voltage V (BR)CBO 100 180 V I C =100A Collector-Emitter Breakdown Voltage V (BR)CEO 80 110 V I C =10mA* Emitter-Base Breakdown Voltage V (BR)EBO 7 8 V I E =100A Collector Cut-Off Current I CBO 100 nA V CB =80V Emitter Cut-Off Current I EBO 100 nA V EB =5.5V Collector Emitter Cut-Off Current I CES 100 nA V CES =80V Collector-Emitter Saturation Voltage V CE(sat) 15 45 145 160 20 60 185 200 mV mV mV mV I C =0.1A, I B =10mA* I C =0.5A, I B =50mA* I C =1A, I B =20mA* I C =1.5A, I B =50mA* Base-Emitter Saturation Voltage V BE(sat) 0.86 1.0 V I C =1.5A, I B =50mA* Base-Emitter Turn-On Voltage V BE(on) 0.82 0.95 V I C =1.5A, V CE =2V* Static Forward Current Transfer Ratio h FE Transition Frequency fT Output Capacitance C obo 11.5 Turn-On Time t (on) Turn-Off Time t (off) 200 300 110 60 20 100 450 450 170 90 30 10 MAX. UNIT I C =10mA, V CE =2V* I C =200mA, V CE =2V* I C =1A, V CE =2V* I C =1.5A, V CE =2V* I C =3A, V CE =2V* I C =5A, V CE =2V* 900 160 MHz 18 CONDITIONS. I C =50mA, V CE =10V f=100MHz pF V CB =10V, f=1MHz 86 ns 1128 ns V CC =10V, I C =500mA I B1 =I B2 =25mA *Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2% ISSUE 2 - JUNE 2006 SEMICONDUCTORS 4 FMMT620 TYPICAL CHARACTERISTICS ISSUE 2 - JUNE 2006 5 SEMICONDUCTORS FMMT620 PACKAGE DIMENSIONS PAD LAYOUT DETAILS PACKAGE DIMENSIONS Millimeters DIM Inches Millimeters DIM Inches Min Max Min Max Min Max Max Max A 2.67 3.05 0.105 0.120 H 0.33 0.51 0.013 0.020 B 1.20 1.40 0.047 0.055 K 0.01 0.10 0.0004 0.004 C ᎏ 1.10 ᎏ 0.043 L 2.10 2.50 0.083 0.0985 D 0.37 0.53 0.015 0.021 M 0.45 0.64 0.018 0.025 F 0.085 0.15 0.0034 0.0059 N 0.95 NOM 0.0375 NOM ᎏ ᎏ ᎏ G 1.90 NOM 0.075 NOM © Zetex Semiconductors plc 2006 Europe Americas Asia Pacific Corporate Headquarters Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Zetex Semiconductors plc Zetex Technology Park Chadderton, Oldham, OL9 9LL United Kingdom Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 [email protected] Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 [email protected] Telephone: (852) 26100 611 Fax: (852) 24250 494 [email protected] Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 [email protected] These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 2 - JUNE 2006 SEMICONDUCTORS 6