SOT89 NPN SILICON PLANAR DARLINGTON TRANSISTOR BST51 ISSUE 3 – JANUARY 1996 FEATURES * Fast Switching * High hFE PARTMAKING DETAIL — C AS2 E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage VCEO 60 V Emitter-Base Voltage VEBO 10 V Pea Pulse Current ICM 1.5 A Continuous Collector Current IC 500 mA Base Current IB 100 mA Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg 1 W -65 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO 80 MAX. V IC=10µA, IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO 60 V IC=10mA, IB=0* Emitter-Base Breakdown Voltage V(BR)EBO 10 V IE=10µA, IC=0 Emitter Cut-Off Current IEBO 10 µA VEB=8V, IE=0 Collector-Emitter Cut-Off Current ICES 10 µA VCE=60V, IC=0 Collector-Emitter Saturation Voltage VCE(sat) 1.3 1.3 V V IC=500mA, IB=0.5mA IC=500mA, IB=0.5mA Tj=150°C Base-Emitter Saturation Voltage VBE(sat) 1.9 V IC=500mA, IB=0.5mA Static Forward Current Transfer Ratio hFE Turn On Time ton 400 Typical ns Turn Off Time toff 1.5K Typical ns 1K 2K IC=150mA, VCE=10V* IC=-500mA, VCE=-10V* * Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% Spice parameter data is available upon request for this device For typical graphs see FMMT38A datasheet 3 - 79 IC=500mA IBon=IBoff=0.5mA