Zowie Technology Corporation Monolithic Dual Switching Diodes Lead free product FETURE z We declare that the material of product compliance with RoHS requirements. 3 MMBD2837G MMBD2838G ANODE 1 CATHODE 3 1 2 ANODE 2 SOT-23 MAXIMUM RATINGS(EACH DIODE) Rating Peak Reverse Voltage D.C Reverse Voltage MMBD2837G MMBD2838G Symbol V RM VR Peak Forward Current I FM Average Rectified Current IO Value 75 Unit Vdc Vdc 30 50 450 300 150 mAdc mAdc 100 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board (1) T A = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) T A = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 Unit mW R θ JA PD 1.8 556 300 mW/°C °C/W mW R θ JA T J , T stg 2.4 417 –55 to +150 mW/°C °C/W °C ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) ( EACH DIODE ) Characteristic Symbol Min Max Unit V (BR) 35 — Vdc — IR 75 — — OFF CHARACTERISTICS Reverse Breakdown Voltage(I (BR) = 100µAdc) MMBD2837G MMBD2838G Reverse Voltage Leakage Current (V R = 30 Vdc) (V R = 50 Vdc) MMBD2837G MMBD2838G Diode Capacitance CT (V R = 0 V, f = 1.0 MHz) Forward Voltage(I F = 10 mAdc) VF (I F = 50 mAdc) (I F = 100 mAdc) Reverse Recovery Time(I F=I R=10mAdc,I R(REC)=1.0mAdc)(Figure 1) t rr 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. REV. 0 µAdc 0.1 0.1 — 4.0 pF — — — — 1.0 1.0 1.2 4.0 Vdc ns Zowie Technology Corporation Zowie Technology Corporation MMBD2837G MMBD2838G +10 V 2.0 k 820 Ω 100 µH IF tp tr 0.1µF IF t t rr 10% 0.1 µF t 90% DUT 50 Ω INPUT SAMPLING OSCILLOSCOPE 50 Ω OUTPUT PULSE GENERATOR i IR INPUT SIGNAL V R(REC) = 1.0 mA OUTPUT PULSE (I F = I R = 10 mA; MEASURED at i R(REC) = 1.0 mA) R Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (I F ) of 10mA. Notes: 2. Input pulse is adjusted so I R(peak) is equal to 10mA. Notes: 3. t p » t rr Figure 1. Recovery Time Equivalent Test Circuit CURVES APPLICABLE TO EACH CATHODE 10 T A = 85°C I R, REVERSE CURRENT ( µA) I F , FORWARD CURRENT (mA) 100 T A= –40°C 10 T A = 25°C 1.0 T A =150°C T A =125°C 1.0 T A =85°C 0.1 T A =55°C 0.01 T A =25°C 0.001 0.1 0.2 0.4 0.6 0.8 1.0 0 1.2 10 20 30 40 V F , FORWARD VOLTAGE (VOLTS) V R , REVERSE VOLTAGE (VOLTS) Figure 2. Forward Voltage Figure 3. Leakage Current 50 C D , DIODE CAPACITANCE (pF) 1.0 0.9 0.8 0.7 0.6 0 2.0 4.0 6.0 8.0 V R , REVERSE VOLTAGE (VOLTS) Figure 4. Capacitance REV. 0 Zowie Technology Corporation