ABB 5SDD0120C0400

VRRM
=
400 V
IFAVM
=
11350 A
IFRMS
=
17800 A
IFSM
=
85000 A
VF0
=
0.74 V
rF
=
0.018 mΩ
Rectifier Diode
5SDD 0120C0400
Doc. No. 5SYA1159-01 July 06
• Optimized for high current rectifiers
• Very low on-state voltage
• Very low thermal resistance
Blocking
VRRM
Repetitive peak reverse voltage
400 V
Half sine wave, tP = 10 ms, f = 50 Hz
VRSM
Maximum peak reverse voltage
450 V
Half sine wave, tP = 10 ms
IRRM
Repetitive peak reverse current
≤ 50 mA
Tj = 170 °C
Mechanical
FM
a
Mounting force
min.
35 kN
max.
40 kN
Acceleration:
Device unclamped
Device clamped
50 m/s2
200 m/s2
m
Weight
0.22 kg
DS
Surface creepage distance
4 mm
Da
Air strike distance
4 mm
Fig. 1
Outline drawing.
All dimensions are in millimeters and represent
nominal values unless stated otherwise.
ABB Semiconductors AG reserves the right to change specifications without notice.
VR = VRRM
5SDD 0120C0400
On-state
IFAVM
Max. average on-state current
11350 A
IFRMS
Max. RMS on-state current
17800 A
IFSM
Max. peak non-repetitive surge current
85000 A
tp =
10 ms Before surge
92500 A
tp =
8.3 ms Tj = 170 °C
∫I2dt
Max. surge current integral
Half sine wave, Tc = 85 °C
36100 kA2s tp =
10 ms
35700 kA2s tp =
8.3 ms VR ≈ 0V
VF min
Minimum on-state voltage
≥
0.83 V
VF max
Maximum on-state voltage
≤
0.88 V
VF0
Threshold voltage
rF
Slope resistance
0.74 V
0.018 mΩ
IF =
After surge:
8000 A
Tj = 170 °C
Approximation for Tj = 170 °C
IF =
8 - 18 kA
Thermal characteristics
Tj
Operating junction temperature range
-40...170 °C
Tstg
Storage temperature range
-40…170 °C
Thermal resistance
junction to case
≤
12 K/kW Anode side cooled
≤
12 K/kW Cathode side cooled
≤
6 K/kW Double side cooled
≤
6 K/kW Single side cooled
≤
3 K/kW Double side cooled
Rth(j-c)
Rth(c-h)
Thermal resistance
case to heatsink
Z th ( j - c )(t) =
ZthJC [K/kW]
8
Double sided cooling
Fm = 35...40 kN
∑
R i (1 - e - t / τ i )
i =1
6
5SDD 0120C0400
4
2
0
10-3
4
FM = 35…40 kN
10-2
10-1
i
1
2
3
4
Ri (K/kW)
3.37
1.50
0.63
0.67
τi (s)
0.095
0.048
0.0035
0.001
FM = 35…40 kN
Double side cooled
0
t [s] 10
Fig. 2 Transient thermal impedance (junction-to-case) vs. time in analytical and graphical forms.
ABB Semiconductors AG reserves the right to change specifications without notice.
page 2 of 4
Doc. No. 5SYA1159-01 July 06
5SDD 0120C0400
On-state characteristics
Surge current characteristics
IF [A]
IFSM [kA]
18000
∫ i2dt [MA2s]
5SDD 0120C0400
140
44
Tj = 170°C
16000
∫i2t
IFSM
120
14000
min.
12000
40
max.
Tj = 170°C
100
36
80
32
60
28
10000
8000
6000
5SDD 0120C0400
4000
2000
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
40
24
0
1.6
1
10
2
10
10
VF [V]
Fig. 3
t [ms]
Fig. 4 Surge current and fusing integral vs. pulse
width (max. values) for non-repetitive, halfsinusoidal surge current pulses.
Forward current vs. forward voltage (min.
and max. values).
Current load capability
I D ( kA )
ID vs. ED, 1000 Hz square wave, TC = 100 °C
28
n
n
n
n
26
=
50
= 100
= 500
= 1000
pulses
pulses
pulses
pulses
24
22
5SDD 0120C0400
20
18
16
1
Fig. 5
10
Duty cycle ED (%) 100
DC-output current with single-phase centre tap
ABB Semiconductors AG reserves the right to change specifications without notice.
page 3 of 4
Doc. No. 5SYA1159-01 July 06
5SDD 0120C0400
Current load capacity, cont.
ID ( k A )
ID vs. ED, 1000 Hz square-wave, Th = 60 °C
36
n
n
n
n
34
32
30
=
50
= 100
= 500
= 1000
pulses
pulses
pulses
pulses
28
26
24
5SDD 0120C0400
22
20
18
16
1
Fig. 6
10
Duty cycle ED (%) 100
DC-output current with single-phase centre tap
ID
-
Fig. 7 Definition of ED for typical welding
sequence
+
Fig. 8 Definition of ID for single-phase centre tap
ABB Semiconductors AG reserves the right to change specifications without notice.
ABB Semiconductors AG
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)62 888 6419
Fax
+41 (0)62 888 6306
Email
abbsem@ch.abb.com
Internet
www.abbsem.com
Doc. No. 5SYA1159-01 July 06