VRRM = 400 V IFAVM = 13526 A IFRMS = 21247 A IFSM = 85000 A VF0 = 0.758 V rF = 0.021 mΩ Housingless Welding Diode 5SDD 0135Z0400 PRELIMINARY Doc. No. 5SYA1179-00 March 07 • • • • High forward current capability Low forward and reverse recovery losses High current application up to 2000 Hz For parallel connection, please contact factory Blocking VRRM Repetitive peak reverse voltage IRRM Repetitive peak reverse current 400 V 75 mA Half sine waveform, f = 50 Hz Tj = -40...180 °C VR = VRRM Mechanical FM Mounting force m Weight DS Surface creepage distance 2 mm Da Air strike distance 2 mm 35..70 kN 0.14 kg Fig. 1 Outline drawing. All dimensions are in millimeters and represent nominal values unless stated otherwise. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5SDD 0135Z0400 On-state IFAVM Max. average on-state current 13526 A Tc = 85 °C Half sine pulse IFRMS Max. RMS on-state current 21247 A Tc = 85 °C Half sine pulse IFSM Max. peak non-repetitive surge current 91000 A tp = 8.3 ms VR =0 V 85000 A tp = 10 ms Half sine pulse 34200 kA2s tp = 8.3 ms VR =0 V 10 ms Half sine pulse ∫I2dt Max. surge current integral VF max Max. on-state voltage 36100 kA2s tp = 0.920 V IF = 8000 A 0.970 V IF = 10000 A VF0 Max. Threshold voltage 0.758 V rF Max. Slope resistance 0.021 mΩ Qrr Typ. Recovered charge 600 µC IF = 10 000…30 000 A IF = 1 000 A, di/dt = -30 A/µs, VR = 100 V Unless otherwise specified Tj = 180 °C Thermal characteristics Tj Operating junction temperature range -40...180 °C Tstg Storage temperature range -40...180 °C Rth(j-c) Thermal resistance junction to case 5.2 K/kW Anode side cooled 15.1 K/kW Cathode side cooled 3.9 K/kW Double side cooled Rth(c-h) Thermal resistance case to heatsink 4.7 K/kW Anode side cooled 5.8 K/kW Cathode side cooled 2.6 K/kW Double side cooled ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. page 2 of 6 Doc. No. 5SYA1179-00 March 07 5SDD 0135Z0400 Z th ( j - c )(t) = Transient therm al impedance junction to case Zthjc ( K/kW ) 4 ∑ R i (1 - e - t / τ i ) i =1 3 2 1 0 0,0001 4 0,001 0,01 0,1 Square w ave pulse duration t d ( s ) 1 i 1 2 3 4 Ri (K/kW) 2.6480 0.8700 0.2200 0.1500 0.0454 0.0255 0.0041 τi (s) Conditions: Fm = 35 +5/-0 kN, Double side cooled 0.0006 Correction for periodic waveforms 180° sine: 0.9 K/kW 120° sine: 1.2 K/kW 60° sine: 2.2 K/kW 180° rectangular: 0.8 K/kW 120° rectangular: 1.2 K/kW 60° rectangular: 2.2 K/kW Fig. 2 Transient thermal impedance (junction-to-case) vs. time in analytical and graphical forms. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. page 3 of 6 Doc. No. 5SYA1179-00 March 07 5SDD 0135Z0400 Surge current characteristics 35000 25 °C 80 IFSM ( kA ) IF ( A ) 200 Tj = 180 °C 30000 70 150 25000 i 2dt (106 A2s) On-state characteristics 60 ∫ i2dt 50 20000 100 15000 40 30 10000 I FSM 50 20 5000 10 0 0 Fig. 3 0,5 1 1,5 2 VF (V) Forward current vs. forward voltage (max. values). 0 1 10 t ( ms ) 0 100 Fig. 4 Surge forward current vs. pulse length, half sine wave, single pulse, VR = 0 V, Tj = Tjmax Surge current characteristics 90 Forward power loss ψ = 60° IFSM ( kA ) PT ( W ) 25000 80 120° 180° 20000 70 DC 60 15000 50 VR = 0 V 40 10000 30 V R ≤ 0.5 V RRM 20 5000 10 0 0 0 1 Fig. 5 4000 8000 10 100 Number n of cycles at 50 Hz Surge forward current vs. number of pulses, half sine wave, Tj = Tjmax 12000 16000 I FAV ( A ) Fig. 6 Forward power loss vs. average forward current, sine waveform, f = 50 Hz, T = 1/f ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. page 4 of 6 Doc. No. 5SYA1179-00 March 07 5SDD 0135Z0400 Forward power loss 60° 90° 120° 180 180° TC ( °C ) PT ( W ) ψ = 30° 25000 160 20000 270° DC 140 15000 120 DC 10000 100 5000 80 0 ψ = 60° 60 0 4000 8000 12000 16000 0 4000 120° 8000 12000 I FAV ( A ) Fig. 7 Forward power loss vs. average forward TC ( °C ) current, square waveform, f = 50 Hz, T = 1/f 180° 16000 I FAV ( A ) Fig. 8 Forward power loss vs. average forward current, sine waveform, f = 50 Hz, T = 1/f 180 160 140 120 DC 100 270° 80 ψ = 30° 60 0 4000 60° 8000 90° 120° 12000 180° 16000 I FAV ( A ) Fig. 9 Max. case temperature vs. aver. forward current, square waveform, f = 50 Hz, T = 1/f ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. page 5 of 6 Doc. No. 5SYA1179-00 March 07 5SDD 0135Z0400 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 [email protected] www.abb.com/semiconductors Doc. No. 5SYA1179-00 March 07