VRSM IF(AV)M IF(RMS) IFSM VF0 rF = = = = = = 3000 1285 2019 15×103 0.933 0.242 Rectifier Diode V A A A V mΩ 5SDD 11D2800 Doc. No. 5SYA1166-00 Okt. 03 • Very low on-state losses • Optimum power handling capability Blocking Maximum rated values 1) Parameter Symbol Conditions Value Unit Repetetive peak reverse voltage VRRM f = 50 Hz, tp = 10ms, Tj = -40...160°C 2800 V f = 5 Hz, tp = 10ms, Tj = -40...160°C 3000 V Non - repetetive peak reverse voltage VRSM Characteristic values Parameter Symbol Conditions Max. (reverse) leakage current IRRM min typ VRRM, Tj = 160°C max 30 Unit mA Mechanical data Maximum rated values 1) Parameter Symbol Conditions Mounting force FM Acceleration a Acceleration a min typ 8 10 max Unit 12 kN Device unclamped 50 m/s 2 Device clamped 100 m/s 2 Characteristic values Parameter Symbol Conditions Weight m Housing thickness H Surface creepage distance DS min typ max 0.3 FM = 10 kN, Ta = 25 °C 25.5 33 Air strike distance Da 18 1) Maximum rated values indicate limits beyond which damage to the device may occur ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Unit kg 26.5 mm mm mm 5SDD 11D2800 On-state Maximum rated values 1) Parameter Symbol Conditions Max. average on-state current IF(AV)M Max. RMS on-state current IF(RMS) Max. peak non-repetitive surge current IFSM Limiting load integral I2t Max. peak non-repetitive surge current IFSM Limiting load integral I2t min typ 50 Hz, Half sine wave, TC = 85 °C tp = 10 ms, Tj = 160°C, VR = 0 V tp = 8.3 ms, Tj = 160°C, VR = 0 V max Unit 1285 A 2019 A 15×10 3 A 1.125×10 6 A2s 16×10 3 A 1.066×10 6 A2s Characteristic values Parameter Symbol Conditions On-state voltage VF IF = 1500 A, Tj = 160°C Threshold voltage V(T0) Slope resistance rT Tj = 160°C IT = 1500...4500 A min typ max Unit 1.3 V 0.933 V 0.242 mΩ typ max Unit 2200 3000 µAs Switching Characteristic values Parameter Symbol Conditions Recovery charge Qrr diF/dt = -30 A/µs, VR = 100 V min IFRM = 1000 A, Tj = 160°C ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1166-00 Okt. 03 page 2 of 6 5SDD 11D2800 Thermal Maximum rated values 1) Parameter Symbol Conditions min max Unit Operating junction temperature range Tvj -40 160 °C -40 175 °C max Unit Double-side cooled Fm = 8...12 kN 32 K/kW Rth(j-c)A Anode-side cooled Fm = 8...12 kN 50 K/kW Rth(j-c)C Cathode-side cooled Fm = 8...12 kN 88 K/kW Double-side cooled Fm = 8...12 kN 8 K/kW Single-side cooled Fm = 8...12 kN 16 K/kW Storage temperature range Tstg typ Characteristic values Symbol Conditions Parameter Thermal resistance junction Rth(j-c) to case Thermal resistance case to Rth(c-h) heatsink Rth(c-h) min typ Analytical function for transient thermal impedance: n Zth(j-c) (t) = ∑ R th i (1 - e-t/τ i ) i =1 i 1 2 3 4 Rth i(K/kW) 11.600 10.110 7.870 2.410 τi(s) 0.7033 0.2185 0.0588 0.0042 Fig. 1 Transient thermal impedance junction-tocase. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1166-00 Okt. 03 page 3 of 6 30 25 °C 160 °C 8000 3 I FSM 25°C 25 2,5 7000 ∫ i dt 25°C 2 160°C 6000 i 2dt (106 A2s) 9000 IFSM ( kA ) IF ( A ) 5SDD 11D2800 20 2 5000 160 °C 15 4000 3000 10 1,5 1 2000 5 1000 0,5 0 0 1 2 Fig. 2 Max. on-state characteristics. 1 10 t ( ms ) 0 100 Fig. 3 Surge forward current vs. pulse length. Half sine wave, single pulse, VR = 0 V 2500 2500 60° PT ( W ) PT ( W ) 0 3 VF (V) 120° 180° DC 2000 ψ = 30° 2000 1500 1500 1000 1000 500 500 0 60° 90° 120° 180° 270° DC 0 0 400 800 1200 1600 0 500 1000 I FAV ( A ) Fig. 4 Forward power loss vs. average forward current, sine waveform, f = 50 Hz 1500 I FAV ( A ) Fig. 5 Forward power loss vs. average forward current, square waveform, f = 50 Hz ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1166-00 Okt. 03 page 4 of 6 5SDD 11D2800 170 TC ( °C ) TC ( °C ) 170 160 160 150 150 140 140 130 130 120 120 110 110 100 100 90 DC 80 80 70 70 60 60 60° 0 400 800 120°180° 1200 DC 90 1600 270° 180° ψ = 30° 0 400 60° 800 I FAV ( A ) Fig. 6 Max. case temperature vs aver. forward current, sine waveform, f = 50 Hz 90° 120° 1200 1600 I FAV ( A ) Fig. 7 Max. case temperature vs aver. forward current, square waveform, f = 50 Hz 1000 Qrr ( µC ) IrrM ( A ) 10000 1000 100 max max min min 100 10 1 10 dI F /dt ( A/µs ) Fig. 8 Reverse recovery charge vs. dIF/dt, IF= 1000 A; Tj = Tjmax, limit values 100 1 10 dI F /dt ( A/µs ) 100 Fig. 9 Peak reverse recovery current vs. diF/dt, IF = 1000 A; Tj = Tjmax, limit values ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1166-00 Okt. 03 page 5 of 6 5SDD 11D2800 Fig. 10 Outline drawing. All dimensions are in millimeters and represent nominal values unless stated otherwise. Related application notes: Doc. Nr Titel 5SYA 2020 Design of RC-Snubbers for Phase Control Applications 5SYA 2029 Designing Large Rectifiers with High Power Diodes 5SYA 2036 Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors Please refer to http://www.abb.com/semiconductors for actual versions. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 [email protected] www.abb.com/semiconductors Doc. No. 5SYA1166-00 Okt. 03