ABB 5SDD11D2800

VRSM
IF(AV)M
IF(RMS)
IFSM
VF0
rF
=
=
=
=
=
=
3000
1285
2019
15×103
0.933
0.242
Rectifier Diode
V
A
A
A
V
mΩ
5SDD 11D2800
Doc. No. 5SYA1166-00 Okt. 03
• Very low on-state losses
• Optimum power handling capability
Blocking
Maximum rated values
1)
Parameter
Symbol Conditions
Value
Unit
Repetetive peak reverse voltage
VRRM
f = 50 Hz, tp = 10ms, Tj = -40...160°C
2800
V
f = 5 Hz, tp = 10ms, Tj = -40...160°C
3000
V
Non - repetetive peak reverse voltage VRSM
Characteristic values
Parameter
Symbol Conditions
Max. (reverse) leakage current
IRRM
min
typ
VRRM, Tj = 160°C
max
30
Unit
mA
Mechanical data
Maximum rated values
1)
Parameter
Symbol Conditions
Mounting force
FM
Acceleration
a
Acceleration
a
min
typ
8
10
max
Unit
12
kN
Device unclamped
50
m/s
2
Device clamped
100
m/s
2
Characteristic values
Parameter
Symbol Conditions
Weight
m
Housing thickness
H
Surface creepage distance
DS
min
typ
max
0.3
FM = 10 kN, Ta = 25 °C
25.5
33
Air strike distance
Da
18
1) Maximum rated values indicate limits beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Unit
kg
26.5
mm
mm
mm
5SDD 11D2800
On-state
Maximum rated values
1)
Parameter
Symbol Conditions
Max. average on-state
current
IF(AV)M
Max. RMS on-state current
IF(RMS)
Max. peak non-repetitive
surge current
IFSM
Limiting load integral
I2t
Max. peak non-repetitive
surge current
IFSM
Limiting load integral
I2t
min
typ
50 Hz, Half sine wave, TC = 85 °C
tp = 10 ms, Tj = 160°C,
VR = 0 V
tp = 8.3 ms, Tj = 160°C,
VR = 0 V
max
Unit
1285
A
2019
A
15×10
3
A
1.125×10
6
A2s
16×10
3
A
1.066×10
6
A2s
Characteristic values
Parameter
Symbol Conditions
On-state voltage
VF
IF = 1500 A, Tj = 160°C
Threshold voltage
V(T0)
Slope resistance
rT
Tj = 160°C
IT = 1500...4500 A
min
typ
max
Unit
1.3
V
0.933
V
0.242
mΩ
typ
max
Unit
2200
3000
µAs
Switching
Characteristic values
Parameter
Symbol Conditions
Recovery charge
Qrr
diF/dt = -30 A/µs, VR = 100 V
min
IFRM = 1000 A, Tj = 160°C
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1166-00 Okt. 03
page 2 of 6
5SDD 11D2800
Thermal
Maximum rated values
1)
Parameter
Symbol Conditions
min
max
Unit
Operating junction
temperature range
Tvj
-40
160
°C
-40
175
°C
max
Unit
Double-side cooled
Fm = 8...12 kN
32
K/kW
Rth(j-c)A
Anode-side cooled
Fm = 8...12 kN
50
K/kW
Rth(j-c)C
Cathode-side cooled
Fm = 8...12 kN
88
K/kW
Double-side cooled
Fm = 8...12 kN
8
K/kW
Single-side cooled
Fm = 8...12 kN
16
K/kW
Storage temperature range Tstg
typ
Characteristic values
Symbol Conditions
Parameter
Thermal resistance junction Rth(j-c)
to case
Thermal resistance case to Rth(c-h)
heatsink
Rth(c-h)
min
typ
Analytical function for transient thermal
impedance:
n
Zth(j-c) (t) = ∑ R th i (1 - e-t/τ i )
i =1
i
1
2
3
4
Rth i(K/kW)
11.600
10.110
7.870
2.410
τi(s)
0.7033
0.2185
0.0588
0.0042
Fig. 1 Transient thermal impedance junction-tocase.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1166-00 Okt. 03
page 3 of 6
30
25 °C 160 °C
8000
3
I FSM
25°C
25
2,5
7000
∫ i dt
25°C
2
160°C
6000
i 2dt (106 A2s)
9000
IFSM ( kA )
IF ( A )
5SDD 11D2800
20
2
5000
160 °C
15
4000
3000
10
1,5
1
2000
5
1000
0,5
0
0
1
2
Fig. 2 Max. on-state characteristics.
1
10
t ( ms )
0
100
Fig. 3 Surge forward current vs. pulse length. Half
sine wave, single pulse, VR = 0 V
2500
2500
60°
PT ( W )
PT ( W )
0
3
VF (V)
120° 180°
DC
2000
ψ = 30°
2000
1500
1500
1000
1000
500
500
0
60° 90° 120° 180°
270°
DC
0
0
400
800
1200
1600
0
500
1000
I FAV ( A )
Fig. 4 Forward power loss vs. average forward
current, sine waveform, f = 50 Hz
1500
I FAV ( A )
Fig. 5 Forward power loss vs. average forward
current, square waveform, f = 50 Hz
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1166-00 Okt. 03
page 4 of 6
5SDD 11D2800
170
TC ( °C )
TC ( °C )
170
160
160
150
150
140
140
130
130
120
120
110
110
100
100
90
DC
80
80
70
70
60
60
60°
0
400
800
120°180°
1200
DC
90
1600
270°
180°
ψ = 30°
0
400
60°
800
I FAV ( A )
Fig. 6 Max. case temperature vs aver. forward
current, sine waveform, f = 50 Hz
90° 120°
1200
1600
I FAV ( A )
Fig. 7 Max. case temperature vs aver. forward
current, square waveform, f = 50 Hz
1000
Qrr ( µC )
IrrM ( A )
10000
1000
100
max
max
min
min
100
10
1
10
dI F /dt ( A/µs )
Fig. 8 Reverse recovery charge vs. dIF/dt,
IF= 1000 A; Tj = Tjmax, limit values
100
1
10
dI F /dt ( A/µs ) 100
Fig. 9 Peak reverse recovery current vs. diF/dt,
IF = 1000 A; Tj = Tjmax, limit values
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1166-00 Okt. 03
page 5 of 6
5SDD 11D2800
Fig. 10 Outline drawing. All dimensions are in millimeters and represent nominal values unless stated otherwise.
Related application notes:
Doc. Nr
Titel
5SYA 2020
Design of RC-Snubbers for Phase Control Applications
5SYA 2029
Designing Large Rectifiers with High Power Diodes
5SYA 2036
Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors
Please refer to http://www.abb.com/semiconductors for actual versions.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone
Fax
Email
Internet
+41 (0)58 586 1419
+41 (0)58 586 1306
abbsem@ch.abb.com
www.abb.com/semiconductors
Doc. No. 5SYA1166-00 Okt. 03