VRSM IFAVM IFRMS IFSM VF0 rF Rectifier Diode = 5200 V = 1978 A = 3106 A = 25.6×103 A = 0.94 V = 0.284 mΩ Ω 5SDD 20F5000 Doc. No. 5SYA1162-01 Jan. 03 • Very low on-state losses • Optimum power handling capability Blocking Maximum rated values 1) Parameter Symbol Conditions Value Unit Repetetive peak reverse voltage VRRM f = 50 Hz, tp = 10ms, Tj = -40...160°C 5000 V f = 5 Hz, tp = 10ms, Tj = -40...160°C 5200 V Non - repetetive peak reverse voltage VRSM Characteristic values Parameter Symbol Conditions Max. (reverse) leakage current IRRM min typ VRRM, Tj = 160°C max 50 Unit mA Mechanical data Maximum rated values 1) Parameter Symbol Conditions Mounting force FM Acceleration a Acceleration a min 20 typ 22 max Unit 24 kN Device unclamped 50 m/s 2 Device clamped 100 m/s 2 Characteristic values Parameter Symbol Conditions min typ Weight m 0.5 kg Housing thickness H 26 mm Pole-piece diameter DP 47 mm Surface creepage distance DS 33 Air strike distance Da 18 1) Maximum rated values indicate limits beyond which damage to the device may occur ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. max Unit mm mm 5SDD 20F5000 On-state Maximum rated values 1) Parameter Symbol Conditions Max. average on-state current IFAVM min typ max 1978 A 3106 A 25.6×10 3 A 2.727×10 6 A2s 24×10 3 A 2.88×10 6 A2s 50 Hz, Half sine wave, TC = 85 °C Max. RMS on-state current IFRMS Max. peak non-repetitive surge current IFSM Limiting load integral I2t Max. peak non-repetitive surge current IFSM Limiting load integral I2t tp = 10 ms, Tj = 160°C, VR = 0 V tp = 8.3 ms, Tj = 160°C, VR = 0 V Unit Characteristic values Parameter Symbol Conditions On-state voltage VF Threshold voltage V(T0) Slope resistance rT min typ max Unit IF = 4000 A, Tj = 160°C 2.1 V Tj = 160°C IT = 2827...8480 A 0.94 V 0.284 mΩ typ max Unit 4500 5500 µAs Switching Characteristic values Parameter Symbol Conditions Recovery charge Qrr min diF/dt = -30 A/µs, VR = 100 V IFRM = 1000 A, Tj = 160°C Thermal Maximum rated values 1) Parameter Symbol Conditions min Operating junction temperature range Tvj max Unit -40 160 °C -40 160 °C max Unit Double-side cooled 15 K/kW Rth(j-c)A Anode-side cooled 24 K/kW Rth(j-c)C Cathode-side cooled 40 K/kW Double-side cooled 4 K/kW Single-side cooled 8 K/kW Storage temperature range Tstg typ Characteristic values Parameter Symbol Conditions Thermal resistance junction Rth(j-c) to case Thermal resistance case to Rth(c-h) heatsink Rth(c-h) min typ Analytical function for transient thermal impedance: n ZthJC(t) = å Ri(1 - e -t/τ i ) i =1 i 1 2 3 4 Ri(K/kW) 6.060 3.850 3.780 1.320 τi(s) 0.6937 0.2040 0.0452 0.0040 Fig. 1 Transient thermal impedance junction-tocase. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1162-01 Jan. 03 page 2 of 5 5SDD 20F5000 25 °C 9000 160 °C 8000 6 ò i2dt 25°C I FSM 25°C 45 5,5 40 7000 6000 5 160°C 35 i 2dt (106 A2s) 50 IFSM ( kA ) IF ( A ) 10000 4,5 160 °C 5000 30 4 25 3,5 20 3 15 2,5 4000 3000 2000 1000 0 0 1 2 3 VF 4 (V) 5000 60° 1 10 t ( ms ) 2 100 Fig. 3 Surge forward current vs. pulse length. Half sine wave, single pulse, VR = 0 V 120° 180° 4500 DC 4000 ψ = 30° 60° 90° 120° 5000 PT ( W ) PT ( W ) Fig. 2 Max. on-state characteristics. 10 4500 270° 4000 DC 3500 3500 3000 3000 2500 2500 2000 2000 1500 1500 1000 1000 500 500 0 180° 0 0 400 800 1200 1600 2000 2400 I FAV ( A ) Fig. 4 Forward power loss vs. average forward current, sine waveform, f = 50 Hz 0 400 800 1200 1600 2000 2400 I FAV ( A ) Fig. 5 Forward power loss vs. average forward current, square waveform, f = 50 Hz ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1162-01 Jan. 03 page 3 of 5 5SDD 20F5000 170 TC ( °C ) TC ( °C ) 170 160 160 150 150 140 140 130 130 120 120 110 110 100 DC 90 90 270° 80 80 70 70 100 DC 60° 60 0 400 800 1200 1600 120° 2000 180° 60 2400 0 I FAV ( A ) Fig. 6 Max. case temperature vs aver. forward current, sine waveform, f = 50 Hz 180° 400 800 ψ = 30° 1200 60° 1600 90° 120° 2000 2400 I FAV ( A ) Fig. 7 Max. case temperature vs aver. forward current, square waveform, f = 50 Hz 1000 10000 min max IrrM ( A ) Qrr ( µC ) max min 1000 100 100 10 1 10 dI F /dt ( A/µs ) 100 Fig. 8 Reverse recovery charge vs. dIF/dt, IF= 1000 A; Tj = Tjmax, limit values 1 10 dI F /dt ( A/µs ) 100 Fig. 9 Peak reverse recovery current vs. diF/dt, IF = 1000 A; Tj = Tjmax, limit values ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1162-01 Jan. 03 page 4 of 5 5SDD 20F5000 Fig. 10 Outline drawing. All dimensions are in millimeters and represent nominal values unless stated otherwise. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 [email protected] www.abb.com/semiconductors Doc. No. 5SYA1162-01 Jan. 03