ABB 5SDD20F5000

VRSM
IFAVM
IFRMS
IFSM
VF0
rF
Rectifier Diode
=
5200 V
=
1978 A
=
3106 A
= 25.6×103 A
=
0.94 V
=
0.284 mΩ
Ω
5SDD 20F5000
Doc. No. 5SYA1162-01 Jan. 03
• Very low on-state losses
• Optimum power handling capability
Blocking
Maximum rated values
1)
Parameter
Symbol Conditions
Value
Unit
Repetetive peak reverse voltage
VRRM
f = 50 Hz, tp = 10ms, Tj = -40...160°C
5000
V
f = 5 Hz, tp = 10ms, Tj = -40...160°C
5200
V
Non - repetetive peak reverse voltage VRSM
Characteristic values
Parameter
Symbol Conditions
Max. (reverse) leakage current
IRRM
min
typ
VRRM, Tj = 160°C
max
50
Unit
mA
Mechanical data
Maximum rated values
1)
Parameter
Symbol Conditions
Mounting force
FM
Acceleration
a
Acceleration
a
min
20
typ
22
max
Unit
24
kN
Device unclamped
50
m/s
2
Device clamped
100
m/s
2
Characteristic values
Parameter
Symbol Conditions
min
typ
Weight
m
0.5
kg
Housing thickness
H
26
mm
Pole-piece diameter
DP
47
mm
Surface creepage distance
DS
33
Air strike distance
Da
18
1) Maximum rated values indicate limits beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
max
Unit
mm
mm
5SDD 20F5000
On-state
Maximum rated values
1)
Parameter
Symbol Conditions
Max. average on-state
current
IFAVM
min
typ
max
1978
A
3106
A
25.6×10
3
A
2.727×10
6
A2s
24×10
3
A
2.88×10
6
A2s
50 Hz, Half sine wave, TC = 85 °C
Max. RMS on-state current IFRMS
Max. peak non-repetitive
surge current
IFSM
Limiting load integral
I2t
Max. peak non-repetitive
surge current
IFSM
Limiting load integral
I2t
tp = 10 ms, Tj = 160°C,
VR = 0 V
tp = 8.3 ms, Tj = 160°C,
VR = 0 V
Unit
Characteristic values
Parameter
Symbol Conditions
On-state voltage
VF
Threshold voltage
V(T0)
Slope resistance
rT
min
typ
max
Unit
IF = 4000 A, Tj = 160°C
2.1
V
Tj = 160°C
IT = 2827...8480 A
0.94
V
0.284
mΩ
typ
max
Unit
4500
5500
µAs
Switching
Characteristic values
Parameter
Symbol Conditions
Recovery charge
Qrr
min
diF/dt = -30 A/µs, VR = 100 V
IFRM = 1000 A, Tj = 160°C
Thermal
Maximum rated values
1)
Parameter
Symbol Conditions
min
Operating junction
temperature range
Tvj
max
Unit
-40
160
°C
-40
160
°C
max
Unit
Double-side cooled
15
K/kW
Rth(j-c)A
Anode-side cooled
24
K/kW
Rth(j-c)C
Cathode-side cooled
40
K/kW
Double-side cooled
4
K/kW
Single-side cooled
8
K/kW
Storage temperature range Tstg
typ
Characteristic values
Parameter
Symbol Conditions
Thermal resistance junction Rth(j-c)
to case
Thermal resistance case to Rth(c-h)
heatsink
Rth(c-h)
min
typ
Analytical function for transient thermal
impedance:
n
ZthJC(t) = å Ri(1 - e -t/τ i )
i =1
i
1
2
3
4
Ri(K/kW)
6.060
3.850
3.780
1.320
τi(s)
0.6937
0.2040
0.0452
0.0040
Fig. 1 Transient thermal impedance junction-tocase.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1162-01 Jan. 03
page 2 of 5
5SDD 20F5000
25 °C
9000
160 °C
8000
6
ò i2dt
25°C
I FSM
25°C
45
5,5
40
7000
6000
5
160°C
35
i 2dt (106 A2s)
50
IFSM ( kA )
IF ( A )
10000
4,5
160 °C
5000
30
4
25
3,5
20
3
15
2,5
4000
3000
2000
1000
0
0
1
2
3
VF
4
(V)
5000
60°
1
10
t ( ms )
2
100
Fig. 3 Surge forward current vs. pulse length. Half
sine wave, single pulse, VR = 0 V
120° 180°
4500
DC
4000
ψ = 30° 60° 90° 120°
5000
PT ( W )
PT ( W )
Fig. 2 Max. on-state characteristics.
10
4500
270°
4000
DC
3500
3500
3000
3000
2500
2500
2000
2000
1500
1500
1000
1000
500
500
0
180°
0
0
400
800
1200
1600
2000
2400
I FAV ( A )
Fig. 4 Forward power loss vs. average forward
current, sine waveform, f = 50 Hz
0
400
800
1200
1600
2000
2400
I FAV ( A )
Fig. 5 Forward power loss vs. average forward
current, square waveform, f = 50 Hz
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1162-01 Jan. 03
page 3 of 5
5SDD 20F5000
170
TC ( °C )
TC ( °C )
170
160
160
150
150
140
140
130
130
120
120
110
110
100
DC
90
90
270°
80
80
70
70
100
DC
60°
60
0
400
800
1200
1600
120°
2000
180°
60
2400
0
I FAV ( A )
Fig. 6 Max. case temperature vs aver. forward
current, sine waveform, f = 50 Hz
180°
400
800
ψ = 30°
1200
60°
1600
90° 120°
2000
2400
I FAV ( A )
Fig. 7 Max. case temperature vs aver. forward
current, square waveform, f = 50 Hz
1000
10000
min
max
IrrM ( A )
Qrr ( µC )
max
min
1000
100
100
10
1
10
dI F /dt ( A/µs ) 100
Fig. 8 Reverse recovery charge vs. dIF/dt,
IF= 1000 A; Tj = Tjmax, limit values
1
10
dI F /dt ( A/µs ) 100
Fig. 9 Peak reverse recovery current vs. diF/dt,
IF = 1000 A; Tj = Tjmax, limit values
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1162-01 Jan. 03
page 4 of 5
5SDD 20F5000
Fig. 10 Outline drawing. All dimensions are in millimeters and represent nominal values unless stated otherwise.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone
Fax
Email
Internet
+41 (0)58 586 1419
+41 (0)58 586 1306
abbsem@ch.abb.com
www.abb.com/semiconductors
Doc. No. 5SYA1162-01 Jan. 03