ABB 5SDD33L5500

VRSM
IF(AV)M
IF(RMS)
IFSM
VF0
rF
=
=
=
=
=
=
5500
3480
5470
46×103
0.94
0.147
Rectifier Diode
V
A
A
A
V
mΩ
5SDD 33L5500
Doc. No. 5SYA1168-00 March 05
• Patented free-floating silicon technology
• Very low on-state losses
• Optimum power handling capability
Blocking
Maximum rated values
1)
Parameter
Symbol Conditions
Value
Unit
Repetitive peak reverse voltage
VRRM
f = 50 Hz, tp = 10ms, Tj = 0...150°C
5000
V
Non-repetitive peak reverse voltage
VRSM
f = 5 Hz, tp = 10ms, Tj = 0...150°C
5500
V
Characteristic values
Parameter
Symbol Conditions
Max. (reverse) leakage current
IRRM
min
typ
VRRM, Tj = 150°C
max
400
Unit
mA
Mechanical data
Maximum rated values
1)
Parameter
Symbol Conditions
Mounting force
FM
Acceleration
a
Acceleration
a
min
63
typ
70
max
Unit
77
kN
Device unclamped
50
m/s
2
Device clamped
100
m/s
2
Characteristic values
Parameter
Symbol Conditions
Weight
m
Housing thickness
H
Surface creepage distance
DS
FM = 70 kN, Ta = 25 °C
min
typ
26.0
35
Air strike distance
Da
14
1) Maximum rated values indicate limits beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
max
Unit
1.45
kg
26.6
mm
mm
mm
5SDD 33L5500
On-state
Maximum rated values
1)
Parameter
Symbol Conditions
Max. average on-state
current
IF(AV)M
Max. RMS on-state current
IF(RMS)
Max. peak non-repetitive
surge current
IFSM
Limiting load integral
I2t
Max. peak non-repetitive
surge current
IFSM
Limiting load integral
I2t
min
typ
50 Hz, Half sine wave, TC = 90 °C
tp = 10 ms, Tj = 150°C,
VR = 0 V
max
Unit
3480
A
5470
A
3
A
6
A2s
3
A
10.06×10
6
A2s
max
Unit
46×10
10.6×10
tp = 8.3 ms, Tj = 150°C,
VR = 0 V
49.2×10
Characteristic values
Parameter
Symbol Conditions
min
typ
On-state voltage
VF
IF = 5000 A, Tj = 150°C
1.68
V
Threshold voltage
V(T0)
0.94
V
Slope resistance
rT
Tj = 150°C
IT = 3000...8000 A
0.147
mΩ
max
Unit
10000
µAs
Switching
Characteristic values
Parameter
Symbol Conditions
Recovery charge
Qrr
min
typ
diF/dt = -10 A/µs, VR = 200 V
IFRM = 4000 A, Tj = 150°C
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1168-00 March 05
page 2 of 6
5SDD 33L5500
Thermal
Maximum rated values
1)
Parameter
Symbol Conditions
Operating junction
temperature range
Tvj
min
max
Unit
0
150
°C
-40
150
°C
max
Unit
Double-side cooled
Fm = 63...77 kN
7
K/kW
Rth(j-c)A
Anode-side cooled
Fm = 63...77 kN
14
K/kW
Rth(j-c)C
Cathode-side cooled
Fm = 63...77 kN
14
K/kW
Double-side cooled
Fm = 63...77 kN
1.5
K/kW
Single-side cooled
Fm = 63...77 kN
3
K/kW
Storage temperature range Tstg
typ
Characteristic values
Symbol Conditions
Parameter
Thermal resistance junction Rth(j-c)
to case
Thermal resistance case to Rth(c-h)
heatsink
Rth(c-h)
min
typ
Analytical function for transient thermal
impedance:
n
Zth(j-c) (t) = ∑ R th i (1 - e-t/τ i )
i =1
i
1
2
3
4
Rth i(K/kW)
4.701
1.401
0.611
0.298
τi(s)
0.5463
0.0746
0.0087
0.0021
Fig. 1 Transient thermal impedance junction-tocase.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1168-00 March 05
page 3 of 6
5SDD 33L5500
Max. on-state characteristic model:
VF25 =
Max. on-state characteristic model:
ATvj + BTvj ⋅ I F + CTvj ⋅ ln(I F +1) + DTvj ⋅ I F
Valid for IF = 300 – 70000 A
B25
C25
A25
-6
-352.00×10
-6
38.50×10
-3
127×10
VF150 =
ATvj + BTvj ⋅ I F + CTvj ⋅ ln(I F +1) + DTvj ⋅ I F
Valid for IF = 300 – 70000 A
D25
A150
B150
C150
D150
4.47×10-3
95.90×10-6
89.80×10-6
90.50×10-3
6.60×10-3
Fig. 2 Isothermal on-state characteristics
Fig. 3 Isothermal on-state characteristics
Fig. 4 On-state power losses vs average on-state
current.
Fig. 5 Max. permissible case temperature vs
average on-state current.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1168-00 March 05
page 4 of 6
5SDD 33L5500
Fig. 6 Surge on-state current vs. number of pulses.
Half-sine wave, 10 ms, 50Hz.
Fig. 7 Surge on-state current vs. number of pulses.
Half-sine wave, 10 ms, 50Hz.
Fig. 8 Recovery charge vs. decay rate of on-state
current.
Fig. 9 Peak reverse recovery current vs. decay rate
of on-state current.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1168-00 March 05
page 5 of 6
5SDD 33L5500
Fig. 10 Outline drawing. All dimensions are in millimeters and represent nominal values unless stated otherwise.
Related application notes:
Doc. Nr
Titel
5SYA 2020
Design of RC-Snubbers for Phase Control Applications
5SYA 2029
Designing Large Rectifiers with High Power Diodes
5SYA 2036
Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors
Please refer to http://www.abb.com/semiconductors for actual versions.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone
Fax
Email
Internet
+41 (0)58 586 1419
+41 (0)58 586 1306
abbsem@ch.abb.com
www.abb.com/semiconductors
Doc. No. 5SYA1168-00 March 05