ABB 5SDD60Q2800

VRSM
IF(AV)M
IF(RMS)
IFSM
VF0
rF
=
=
=
=
=
=
2800
7385
11600
87×103
0.8
0.05
Rectifier Diode
V
A
A
A
V
mΩ
5SDD 60Q2800
Doc. No. 5SYA1161-01 Feb. 05
• Patented free-floating silicon technology
• Very low on-state losses
• Optimum power handling capability
Blocking
Maximum rated values
1)
Parameter
Symbol Conditions
Value
Unit
Repetitive peak reverse voltage
VRRM
f = 50 Hz, tp = 10ms, Tj = 160°C
2000
V
Non-repetitive peak reverse voltage
VRSM
f = 5 Hz, tp = 10ms, Tj = 160°C
2800
V
Characteristic values
Parameter
Symbol Conditions
Max. (reverse) leakage current
IRRM
min
typ
VRRM, Tj = 160°C
max
400
Unit
mA
Mechanical data
Maximum rated values
1)
Parameter
Symbol Conditions
Mounting force
FM
Acceleration
a
Acceleration
a
min
81
typ
90
max
Unit
108
kN
Device unclamped
50
m/s
2
Device clamped
100
m/s
2
Characteristic values
Parameter
Symbol Conditions
Weight
m
Housing thickness
H
Surface creepage distance
DS
min
typ
max
2.1
FM = 90 kN, Ta = 25 °C
25.8
36
Air strike distance
Da
15
1) Maximum rated values indicate limits beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Unit
kg
26.2
mm
mm
mm
5SDD 60Q2800
On-state
Maximum rated values
1)
Parameter
Symbol Conditions
Max. average on-state
current
IF(AV)M
Max. RMS on-state current
IF(RMS)
Max. peak non-repetitive
surge current
IFSM
Limiting load integral
I2t
Max. peak non-repetitive
surge current
IFSM
Limiting load integral
I2t
min
typ
50 Hz, Half sine wave, TC = 90 °C
tp = 10 ms, Tj = 160°C,
VR = 0 V
max
Unit
7385
A
11600
A
3
A
6
A2s
3
A
6
A2s
87×10
38.5×10
tp = 8.3 ms, Tj = 160°C,
VR = 0 V
95×10
38×10
Characteristic values
Parameter
Symbol Conditions
On-state voltage
VF
IF = 5000 A, Tj = 160°C
Threshold voltage
V(T0)
Slope resistance
rT
Tj = 160°C
IT = 2500...7500 A
min
typ
max
1.05
Unit
V
0.8
V
0.05
mΩ
max
Unit
6300
µAs
Switching
Characteristic values
Parameter
Symbol Conditions
Recovery charge
Qrr
min
typ
diF/dt = -10 A/µs, VR = 200 V
IFRM = 4000 A, Tj = 160°C
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1161-01 Feb. 05
page 2 of 6
5SDD 60Q2800
Thermal
Maximum rated values
1)
Parameter
Symbol Conditions
Operating junction
temperature range
Tvj
min
max
Unit
160
°C
175
°C
max
Unit
Double-side cooled
Fm = 81...108 kN
5
K/kW
Rth(j-c)A
Anode-side cooled
Fm = 81...108 kN
10
K/kW
Rth(j-c)C
Cathode-side cooled
Fm = 81...108 kN
10
K/kW
Double-side cooled
Fm = 81...108 kN
1
K/kW
Single-side cooled
Fm = 81...108 kN
2
K/kW
Storage temperature range Tstg
typ
-40
Characteristic values
Symbol Conditions
Parameter
Thermal resistance junction Rth(j-c)
to case
Thermal resistance case to Rth(c-h)
heatsink
Rth(c-h)
min
typ
Analytical function for transient thermal
impedance:
n
Zth(j-c) (t) = ∑ R th i (1 - e-t/τ i )
i =1
i
1
2
3
4
Rth i(K/kW)
3.378
0.919
0.426
0.280
τi(s)
0.4710
0.0707
0.0074
0.0014
Fig. 1 Transient thermal impedance junction-tocase.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1161-01 Feb. 05
page 3 of 6
5SDD 60Q2800
5SDD 60Q2800
5SDD 60Q2800
Fig. 2 On-state characteristics.
Fig. 3 On-state characteristics.
Tcase (°C)
Pf (W)
165
Double-sided cooling
160
155
DC
180° rectangular
180° sine
120° rectangular
150
145
140
135
130
125
120
115
110
5SDD 60Q2800
5SDD 60Q2800
105
100
95
90
0
2000
4000
6000
8000
10000
12000
IFAV (A)
Fig. 4 On-state power losses vs average on-state
current.
Fig. 5 Max. permissible case temperature vs
average on-state current.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1161-01 Feb. 05
page 4 of 6
5SDD 60Q2800
IFSM [kA]
∫ i2dt [MA2s]
5SDD 60Q2800
150
50
IFSM
140
48
Tj = 160°C
IFSM (kA)
90
Tj = 160°C
80
130
46
120
44
110
42
100
40
90
38
80
36
30
70
34
20
32
10
70
60
50
50
30
100
101
102
0
5SDD 60Q2800
∫i2t
60
40
1
2
3
4
5
20
6 7 8 10
np
t [ms]
Fig. 6 Surge on-state current vs. pulse length. Halfsine wave.
Qrr (µAs)
700
600
500
30000
I FRM = 4000 A
I FRM = 4000 A
400
Tj = Tjmax
Tj = Tjmax
300
200
104
8000
7000
6000
5000
5SDD 60Q2800
4000
3000
2000
1
I RM(A)
2
3
4
5 6 7 8 9 10
20
30
102
80
70
60
50
40
5SDD 60Q2800
20000
Fig. 7 Surge on-state current vs. number of pulses.
Half-sine wave, 10 ms, 50Hz.
30
1
2
3
4
5 6 7 8 910
- di F /dt (A /µs)
Fig. 8 Recovery charge vs. decay rate of on-state
current.
20
30
-diF /dt(A/µs)
Fig. 9 Peak reverse recovery current vs. decay rate
of on-state current.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1161-01 Feb. 05
page 5 of 6
5SDD 60Q2800
Fig. 10 Outline drawing. All dimensions are in millimeters and represent nominal values unless stated otherwise.
Related application notes:
Doc. Nr
Titel
5SYA 2020
Design of RC-Snubbers for Phase Control Applications
5SYA 2029
Designing Large Rectifiers with High Power Diodes
5SYA 2036
Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors
Please refer to http://www.abb.com/semiconductors for actual versions.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone
Fax
Email
Internet
+41 (0)58 586 1419
+41 (0)58 586 1306
abbsem@ch.abb.com
www.abb.com/semiconductors
Doc. No. 5SYA1161-01 Feb. 05