ABB 5SDF02D6002

VRRM
IFAVM
IFSM
VF0
rF
VDClink
=
=
=
=
=
=
6000
250
3.6
2.5
2.5
3000
V
A
kA
V
mΩ
Ω
V
Fast Recovery Diode
5SDF 02D6002
PRELIMINARY
Doc. No. 5SYA1108-02 Sep. 01
• Patented free-floating silicon technology
• Low switching losses
• Optimized for use as snubber diode in high-voltage GTO converters
• Standard press-pack ceramic housing, hermetically cold-welded
• Cosmic radiation withstand rating
Blocking
VRRM
Repetitive peak reverse voltage
IRRM
Repetitive peak reverse current
VDClink
Permanent DC voltage for 100 FIT
failure rate
3000
V
100% Duty
VDClink
Permanent DC voltage for 100 FIT
failure rate
3800
V
5% Duty
Mechanical data
Fm
a
6000 V
≤
Half sine wave, tP = 10 ms, f = 50 Hz
50 mA
VR = VRRM, Tj = 125°C
(see Fig. 7)
Mounting force
min.
10 kN
max.
12 kN
Acceleration:
50 m/s
2
Device clamped
200 m/s
2
m
Weight
0.25 kg
DS
Surface creepage distance
≥
30 mm
Da
Air strike distance
≥
20 mm
Device unclamped
ABB Semiconductors AG reserves the right to change specifications without notice.
Ambient cosmic radiation at
sea level in open air.
5SDF 02D6002
On-state (see Fig. 2, 3)
IFAVM
Max. average on-state current
250 A
IFRMS
Max. RMS on-state current
400 A
IFSM
Max. peak non-repetitive
3.6 kA
tp
=
10 ms
Before surge:
11.4 kA
tp
=
1 ms
Tc = Tj = 125°C
2
65⋅103 A s
tp
=
10 ms
2
65⋅103 A s
tp
=
1 ms
IF
=
surge current
òI2dt
Max. surge current integral
Half sine wave, Tc = 85°C
VF
Forward voltage drop
5 V
VF0
Threshold voltage
2.5 V
rF
Slope resistance
2.5 mΩ
≤
After surge:
VR ≈ 0 V
1000 A
Approximation for
IF
Tj = 125°C
= 200…4000
A
Turn-on (see Fig. 4, 5)
Vfr
Peak forward recovery voltage
≤
370 V
di/dt = 1000 A/µs, Tj = 125°C
di/dt = 100 A/µs,
Tj = 125 °C,
IF = 1000 A,
VRM = 6000 V,
RS = 22 Ω,
CS = 0.22 µF
Turn-off (see Fig. 6)
Irr
Reverse recovery current
≤
260 A
Qrr
Reverse recovery charge
≤
2000 µC
Err
Turn-off energy
≤
-- J
Thermal (see Fig. 01)
Tj
Operating junction temperature range
-40...125°C
Tstg
Storage temperature range
-40...125°C
RthJC
Thermal resistance junction to case
RthCH
Thermal resistance case to heatsink
≤
80 K/kW
Anode side cooled
≤
80 K/kW
Cathode side cooled
≤
40 K/kW
Double side cooled
≤
16 K/kW
Single side cooled
≤
8 K/kW
Double side cooled
Fm =
10… 12 kN
Analytical function for transient thermal impedance.
i
n
Z thJC (t) =
å
i =1
R i (1 - e
- t /τ i
)
1
2
3
4
R i(K/kW)
20.95
10.57
7.15
1.33
τi(s)
0.396
0.072
0.009
0.0044
Fm = 10… 12 kN Double side cooled
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1108-02 Sep. 01
page 2 of 5
5SDF 02D6002
Fig. 1
Fig. 2
Transient thermal impedance (junction to case) vs. time in analytical and graphical form (max. values).
Forward current vs. forward voltage (typ.
and max. values).
Fig. 3
Surge current and fusing integral vs. pulse
width (max. values) for non repetitive, halfsinusoidal surge current pulses.
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1108-02 Sep. 01
page 3 of 5
5SDF 02D6002
Fig. 4
Typical forward voltage waveform when the
diode is turned on with a high di/dt.
Fig. 6
Typical current and voltage waveforms at
turn-off with conventional RC snubber circuit
Fig. 5
Forward recovery voltage vs. turn-on di/dt
(max. values).
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1108-02 Sep. 01
page 4 of 5
5SDF 02D6002
Fig. 7
Outline drawing. All dimensions are in millimeters and represent nominal values unless stated otherwise.
ABB Semiconductors AG reserves the right to change specifications without notice.
ABB Semiconductors AG
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone
Fax
Email
Internet
+41 (0)62 888 6419
+41 (0)62 888 6306
abbsem@ch.abb.com
www.abbsem.com
Doc. No. 5SYA1108-02 Sep. 01