VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 6000 250 3.6 2.5 2.5 3000 V A kA V mΩ Ω V Fast Recovery Diode 5SDF 02D6002 PRELIMINARY Doc. No. 5SYA1108-02 Sep. 01 • Patented free-floating silicon technology • Low switching losses • Optimized for use as snubber diode in high-voltage GTO converters • Standard press-pack ceramic housing, hermetically cold-welded • Cosmic radiation withstand rating Blocking VRRM Repetitive peak reverse voltage IRRM Repetitive peak reverse current VDClink Permanent DC voltage for 100 FIT failure rate 3000 V 100% Duty VDClink Permanent DC voltage for 100 FIT failure rate 3800 V 5% Duty Mechanical data Fm a 6000 V ≤ Half sine wave, tP = 10 ms, f = 50 Hz 50 mA VR = VRRM, Tj = 125°C (see Fig. 7) Mounting force min. 10 kN max. 12 kN Acceleration: 50 m/s 2 Device clamped 200 m/s 2 m Weight 0.25 kg DS Surface creepage distance ≥ 30 mm Da Air strike distance ≥ 20 mm Device unclamped ABB Semiconductors AG reserves the right to change specifications without notice. Ambient cosmic radiation at sea level in open air. 5SDF 02D6002 On-state (see Fig. 2, 3) IFAVM Max. average on-state current 250 A IFRMS Max. RMS on-state current 400 A IFSM Max. peak non-repetitive 3.6 kA tp = 10 ms Before surge: 11.4 kA tp = 1 ms Tc = Tj = 125°C 2 65⋅103 A s tp = 10 ms 2 65⋅103 A s tp = 1 ms IF = surge current òI2dt Max. surge current integral Half sine wave, Tc = 85°C VF Forward voltage drop 5 V VF0 Threshold voltage 2.5 V rF Slope resistance 2.5 mΩ ≤ After surge: VR ≈ 0 V 1000 A Approximation for IF Tj = 125°C = 200…4000 A Turn-on (see Fig. 4, 5) Vfr Peak forward recovery voltage ≤ 370 V di/dt = 1000 A/µs, Tj = 125°C di/dt = 100 A/µs, Tj = 125 °C, IF = 1000 A, VRM = 6000 V, RS = 22 Ω, CS = 0.22 µF Turn-off (see Fig. 6) Irr Reverse recovery current ≤ 260 A Qrr Reverse recovery charge ≤ 2000 µC Err Turn-off energy ≤ -- J Thermal (see Fig. 01) Tj Operating junction temperature range -40...125°C Tstg Storage temperature range -40...125°C RthJC Thermal resistance junction to case RthCH Thermal resistance case to heatsink ≤ 80 K/kW Anode side cooled ≤ 80 K/kW Cathode side cooled ≤ 40 K/kW Double side cooled ≤ 16 K/kW Single side cooled ≤ 8 K/kW Double side cooled Fm = 10… 12 kN Analytical function for transient thermal impedance. i n Z thJC (t) = å i =1 R i (1 - e - t /τ i ) 1 2 3 4 R i(K/kW) 20.95 10.57 7.15 1.33 τi(s) 0.396 0.072 0.009 0.0044 Fm = 10… 12 kN Double side cooled ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1108-02 Sep. 01 page 2 of 5 5SDF 02D6002 Fig. 1 Fig. 2 Transient thermal impedance (junction to case) vs. time in analytical and graphical form (max. values). Forward current vs. forward voltage (typ. and max. values). Fig. 3 Surge current and fusing integral vs. pulse width (max. values) for non repetitive, halfsinusoidal surge current pulses. ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1108-02 Sep. 01 page 3 of 5 5SDF 02D6002 Fig. 4 Typical forward voltage waveform when the diode is turned on with a high di/dt. Fig. 6 Typical current and voltage waveforms at turn-off with conventional RC snubber circuit Fig. 5 Forward recovery voltage vs. turn-on di/dt (max. values). ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1108-02 Sep. 01 page 4 of 5 5SDF 02D6002 Fig. 7 Outline drawing. All dimensions are in millimeters and represent nominal values unless stated otherwise. ABB Semiconductors AG reserves the right to change specifications without notice. ABB Semiconductors AG Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)62 888 6419 +41 (0)62 888 6306 [email protected] www.abbsem.com Doc. No. 5SYA1108-02 Sep. 01