VRRM IF(AV)M IFSM V(T0) rT VDC-link = = = = = = 5500 175 3×103 3.35 7.2 3300 V A A V mΩ V Fast Recovery Diode 5SDF 02D6004 PRELIMINARY Doc. No. 5SYA1118-02 Okt. 02 • Patented free-floating technology • Industry standard housing • Cosmic radiation withstand rating • Low on-state and switching losses • Optimized for snubberless operation Blocking Maximum rated values 1) Parameter Symbol Conditions Value Unit Repetitive peak reverse voltage Permanent DC voltage for 100 FIT failure rate Permanent DC voltage for 100 FIT failure rate VRRM f = 50 Hz, tp = 10ms, Tvj = 115°C 5500 V VDC-link Ambient cosmic radiation at sea level in open air. (100% Duty) Ambient cosmic radiation at sea level in open air. (5% Duty) 3300 V 3900 V max Unit VDC-link Characteristic values Parameter Symbol Conditions Repetitive peak reverse current IRRM min typ VR = VRRM, Tvj = 115°C 20 mA Mechanical data Maximum rated values 1) Parameter Symbol Conditions Mounting force Fm Acceleration a Acceleration a min 14 typ 16 max Unit 18 kN Device unclamped 50 m/s 2 Device clamped 200 m/s 2 Characteristic values Parameter Symbol Conditions min typ Weight m Housing thickness H 26.0 Surface creepage distance DS 30 mm Air strike distance Da 20 mm Note 1 Maximum rated values indicate limits beyond which damage to the device may occur ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. max Unit 0.25 kg 26.6 mm 5SDF 02D6004 On-state Maximum rated values 1) Parameter Symbol Conditions Max. average on-state current IF(AV)M Max. RMS on-state current IF(RMS) Max. peak non-repetitive surge current IFSM Limiting load integral I2t Max. peak non-repetitive surge current IFSM Limiting load integral I2t min typ Half sine wave, TC = 70 °C max Unit 175 A 275 A 3 A 3 A2s 3 A 32×10 3 A2s max Unit 3×10 tp = 10 ms, Tvj = 115°C, VR = 0 V 45×10 tp = 1 ms, Tvj = 115°C, VR = 0 V 8×10 Characteristic values Parameter Symbol Conditions min typ On-state voltage VF IF = 520 A, Tvj = 115°C 7.1 V Threshold voltage V(T0) 3.35 V Slope resistance rT Tvj = 115°C IF = 200...1000 A 7.2 mΩ max Unit 370 V max Unit 220 A/µs max Unit 300 A Turn-on Characteristic values Parameter Symbol Conditions Peak forward recovery voltage VFRM min typ dIF/dt = 1000 A/µs, Tvj = 115°C Turn-off Maximum rated values 1) Parameter Symbol Conditions Max. decay rate of on-state di/dtcrit current min typ IFM = A, Tvj = 115 °C VDC-link = 3300 V Characteristic values Parameter Symbol Conditions Reverse recovery current IRM IFQ = 520 A, VDC-Link = 3300 V Reverse recovery charge Qrr di/dt = 220 A/µs, LCL = nH Turn-off energy Err CCL = min typ µF, RCL = Ω, Tj = 115°C µC 1.8 J ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1118-02 Okt. 02 page 2 of 5 5SDF 02D6004 Thermal Maximum rated values 1) Parameter Symbol Conditions min max Unit Operating junction temperature range Tvj -40 115 °C -40 125 °C Storage temperature range Tstg typ Characteristic values Parameter Symbol Conditions max Unit Double-side cooled Fm = 14...18 kN 40 K/kW Rth(j-c)A Anode-side cooled Fm = 14...18 kN 80 K/kW Rth(j-c)C Cathode-side cooled Fm = 14...18 kN 80 K/kW Double-side cooled Fm = 14...18 kN 8 K/kW Single-side cooled Fm = 14...18 kN 16 K/kW Thermal resistance junction Rth(j-c) to case Thermal resistance case to Rth(c-h) heatsink Rth(c-h) min typ Analytical function for transient thermal impedance: n Zth(j-c) (t) = ∑ R th i (1 - e-t/τ i ) i =1 i 1 2 3 4 Rth i(K/kW) 25.699 9.472 3.381 1.466 τi(s) 0.3802 0.0483 0.0060 0.0018 Fig. 1 Transient thermal impedance (junction to case) vs. time in analytical and graphical form (max. values) ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1118-02 Okt. 02 page 3 of 5 5SDF 02D6004 Irr [A] IF [A] 400 1200 Tj = 115°C diF/dt = 190 A/µs VDClink = 3300 V Tj = 115°C 1100 350 1000 300 900 800 250 700 200 600 500 150 400 100 300 200 50 100 0 0 3 4 5 6 7 8 9 10 0 11 100 200 300 400 500 Fig. 2 Forward current vs. forward voltage 600 IFQ [A] VF [V] Fig. 3 Diode reverse recovery current vs. turn-off current IFQ [A] Err [J] 600 2.0 Tj = 115°C diF/dt = 190 A/µs VDClink = 3300 V 1.8 1.6 500 1.4 Tj = 0 - 115°C diF/dt = 190 A/µs VRM ≤ VRRM 400 1.2 300 1.0 0.8 200 0.6 0.4 100 0.2 0 0.0 0 100 200 300 400 500 600 0 1000 2000 3000 Fig. 4 Diode turn-off energy per pulse vs. turn-off current 4000 5000 VDClink [V] IFQ [A] Fig. 5 Max. repetitive diode forward current ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1118-02 Okt. 02 page 4 of 5 5SDF 02D6004 VF(t), IF (t) dIF/dt VFR -dIF/dt IF (t) IF (t) VF (t) VF (t) Qrr t tfr tfr (typ) 10 µs VR (t) IRM Fig. 6 General current and voltage waveforms Fig. 7 Outline drawing; all dimensions are in millimeters and represent nominal values unless stated otherwise Related documents: Doc. Nr Titel 5SYA 2036 Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors 5SZK 9104 Specification of environmental class for pressure contact diodes, PCTs and GTO, STORAGE available on request, please contact factory 5SZK 9105 Specification of environmental class for pressure contact diodes, PCTs and GTO, TRANSPORTATION available on request, please contact factory Please refer to http://www.abb.com/semiconductors for current version of documents. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 [email protected] www.abb.com/semiconductors Doc. No. 5SYA1118-02 Okt. 02