ABB 5SDF02D6004

VRRM
IF(AV)M
IFSM
V(T0)
rT
VDC-link
=
=
=
=
=
=
5500
175
3×103
3.35
7.2
3300
V
A
A
V
mΩ
V
Fast Recovery Diode
5SDF 02D6004
PRELIMINARY
Doc. No. 5SYA1118-02 Okt. 02
• Patented free-floating technology
• Industry standard housing
• Cosmic radiation withstand rating
• Low on-state and switching losses
• Optimized for snubberless operation
Blocking
Maximum rated values
1)
Parameter
Symbol Conditions
Value
Unit
Repetitive peak reverse voltage
Permanent DC voltage for 100 FIT
failure rate
Permanent DC voltage for 100 FIT
failure rate
VRRM
f = 50 Hz, tp = 10ms, Tvj = 115°C
5500
V
VDC-link
Ambient cosmic radiation at sea level in open
air. (100% Duty)
Ambient cosmic radiation at sea level in open
air. (5% Duty)
3300
V
3900
V
max
Unit
VDC-link
Characteristic values
Parameter
Symbol Conditions
Repetitive peak reverse current
IRRM
min
typ
VR = VRRM, Tvj = 115°C
20
mA
Mechanical data
Maximum rated values
1)
Parameter
Symbol Conditions
Mounting force
Fm
Acceleration
a
Acceleration
a
min
14
typ
16
max
Unit
18
kN
Device unclamped
50
m/s
2
Device clamped
200
m/s
2
Characteristic values
Parameter
Symbol Conditions
min
typ
Weight
m
Housing thickness
H
26.0
Surface creepage distance
DS
30
mm
Air strike distance
Da
20
mm
Note 1 Maximum rated values indicate limits beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
max
Unit
0.25
kg
26.6
mm
5SDF 02D6004
On-state
Maximum rated values
1)
Parameter
Symbol Conditions
Max. average on-state
current
IF(AV)M
Max. RMS on-state current
IF(RMS)
Max. peak non-repetitive
surge current
IFSM
Limiting load integral
I2t
Max. peak non-repetitive
surge current
IFSM
Limiting load integral
I2t
min
typ
Half sine wave, TC = 70 °C
max
Unit
175
A
275
A
3
A
3
A2s
3
A
32×10
3
A2s
max
Unit
3×10
tp = 10 ms, Tvj = 115°C, VR = 0 V
45×10
tp = 1 ms, Tvj = 115°C, VR = 0 V
8×10
Characteristic values
Parameter
Symbol Conditions
min
typ
On-state voltage
VF
IF = 520 A, Tvj = 115°C
7.1
V
Threshold voltage
V(T0)
3.35
V
Slope resistance
rT
Tvj = 115°C
IF = 200...1000 A
7.2
mΩ
max
Unit
370
V
max
Unit
220
A/µs
max
Unit
300
A
Turn-on
Characteristic values
Parameter
Symbol Conditions
Peak forward recovery
voltage
VFRM
min
typ
dIF/dt = 1000 A/µs, Tvj = 115°C
Turn-off
Maximum rated values
1)
Parameter
Symbol Conditions
Max. decay rate of on-state di/dtcrit
current
min
typ
IFM = A, Tvj = 115 °C
VDC-link = 3300 V
Characteristic values
Parameter
Symbol Conditions
Reverse recovery current
IRM
IFQ = 520 A, VDC-Link = 3300 V
Reverse recovery charge
Qrr
di/dt = 220 A/µs, LCL = nH
Turn-off energy
Err
CCL =
min
typ
µF, RCL = Ω, Tj = 115°C
µC
1.8
J
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1118-02 Okt. 02
page 2 of 5
5SDF 02D6004
Thermal
Maximum rated values
1)
Parameter
Symbol Conditions
min
max
Unit
Operating junction
temperature range
Tvj
-40
115
°C
-40
125
°C
Storage temperature range Tstg
typ
Characteristic values
Parameter
Symbol Conditions
max
Unit
Double-side cooled
Fm = 14...18 kN
40
K/kW
Rth(j-c)A
Anode-side cooled
Fm = 14...18 kN
80
K/kW
Rth(j-c)C
Cathode-side cooled
Fm = 14...18 kN
80
K/kW
Double-side cooled
Fm = 14...18 kN
8
K/kW
Single-side cooled
Fm = 14...18 kN
16
K/kW
Thermal resistance junction Rth(j-c)
to case
Thermal resistance case to Rth(c-h)
heatsink
Rth(c-h)
min
typ
Analytical function for transient thermal
impedance:
n
Zth(j-c) (t) = ∑ R th i (1 - e-t/τ i )
i =1
i
1
2
3
4
Rth i(K/kW)
25.699
9.472
3.381
1.466
τi(s)
0.3802
0.0483
0.0060
0.0018
Fig. 1 Transient thermal impedance (junction to
case) vs. time in analytical and graphical form
(max. values)
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1118-02 Okt. 02
page 3 of 5
5SDF 02D6004
Irr [A]
IF [A]
400
1200
Tj = 115°C
diF/dt = 190 A/µs
VDClink = 3300 V
Tj = 115°C
1100
350
1000
300
900
800
250
700
200
600
500
150
400
100
300
200
50
100
0
0
3
4
5
6
7
8
9
10
0
11
100
200
300
400
500
Fig. 2 Forward current vs. forward voltage
600
IFQ [A]
VF [V]
Fig. 3 Diode reverse recovery current vs. turn-off
current
IFQ [A]
Err [J]
600
2.0
Tj = 115°C
diF/dt = 190 A/µs
VDClink = 3300 V
1.8
1.6
500
1.4
Tj = 0 - 115°C
diF/dt = 190 A/µs
VRM ≤ VRRM
400
1.2
300
1.0
0.8
200
0.6
0.4
100
0.2
0
0.0
0
100
200
300
400
500
600
0
1000
2000
3000
Fig. 4 Diode turn-off energy per pulse vs. turn-off
current
4000
5000
VDClink [V]
IFQ [A]
Fig. 5 Max. repetitive diode forward current
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1118-02 Okt. 02
page 4 of 5
5SDF 02D6004
VF(t), IF (t)
dIF/dt
VFR
-dIF/dt
IF (t)
IF (t)
VF (t)
VF (t)
Qrr
t
tfr
tfr (typ)
10 µs
VR (t)
IRM
Fig. 6 General current and voltage waveforms
Fig. 7 Outline drawing; all dimensions are in millimeters and represent nominal values unless stated otherwise
Related documents:
Doc. Nr
Titel
5SYA 2036
Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors
5SZK 9104
Specification of environmental class for pressure contact diodes, PCTs and GTO, STORAGE available on request, please
contact factory
5SZK 9105
Specification of environmental class for pressure contact diodes, PCTs and GTO, TRANSPORTATION available on
request, please contact factory
Please refer to http://www.abb.com/semiconductors for current version of documents.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone
Fax
Email
Internet
+41 (0)58 586 1419
+41 (0)58 586 1306
abbsem@ch.abb.com
www.abb.com/semiconductors
Doc. No. 5SYA1118-02 Okt. 02