VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 4500 275 5 2.15 2.8 2800 V A kA V mΩ Ω V Fast Recovery Diode 5SDF 03D4502 PRELIMINARY Doc. No. 5SYA1117-02 Sep. 01 • Patented free-floating technology • Industry standard housing • Cosmic radiation withstand rating • Low on-state and switching losses • Optimized to use in snubberless operation Blocking VRRM Repetitive peak reverse voltage IRRM Repetitive peak reverse current VDClink Permanent DC voltage for 100 FIT failure rate 2800 V 100% Duty VDClink Permanent DC voltage for 100 FIT failure rate 3200 V 5% Duty Mechanical data Fm a 4500 V ≤ Half sine wave, tP = 10 ms, f = 50 Hz 20 mA VR = VRRM, Tj = 115°C (see Fig. 7) Mounting force min. 14 kN max. 18 kN Acceleration: 50 m/s 2 Device clamped 200 m/s 2 m Weight 0.25 kg DS Surface creepage distance ≥ 30 mm Da Air strike distance ≥ 20 mm Device unclamped ABB Semiconductors AG reserves the right to change specifications without notice. Ambient cosmic radiation at sea level in open air. 5SDF 03D4502 On-state (see Fig. 1, 2) IFAVM Max. average on-state current 275 A IFRMS Max. RMS on-state current 435 A IFSM Max. peak non-repetitive 5 kA tp = 10 ms Before surge: 10 kA tp = 1 ms Tc = Tj = 115°C 2 ⋅103 A s tp = 10 ms 2 50⋅103 A s tp = 1 ms IF = surge current òI2dt Max. surge current integral VF Forward voltage drop VF0 Threshold voltage rF Slope resistance Half sine wave, Tc = 70°C 3.9 V ≤ 2.15 V After surge: VR ≈ 0 V 630 A Approximation for 2.8 mΩ IF Tj = 115°C = 200…1000 A Turn-on Vfr Peak forward recovery voltage ≤ 370 V di/dt = 1000 A/µs, Tj = 115°C IF = 630 A, VDclink = 2800 V Turn-off (see Fig. 3, 4) di/dtcrit Max. decay rate of on-state current ≤ 300 A/µs Irr Reverse recovery current ≤ 355 A Qrr Reverse recovery charge ≤ 930 µC Err Turn-off energy ≤ 1.8 J Tj = 115 °C Thermal Tj Operating junction temperature range -40...115°C Tstg Storage temperature range -40...125°C RthJC Thermal resistance junction to case RthCH Thermal resistance case to heatsink ≤ 80 K/kW Anode side cooled ≤ 80 K/kW Cathode side cooled ≤ 40 K/kW Double side cooled ≤ 16 K/kW Single side cooled ≤ 8 K/kW Double side cooled Fm = 14… 18 kN Analytical function for transient thermal impedance. i n Z thJC (t) = å i =1 R i (1 - e - t /τ i ) 1 2 3 4 R i(K/kW) 20.95 10.57 7.15 1.33 τi(s) 0.396 0.072 0.009 0.0044 Fm = 14… 18 kN Double side cooled ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1117-02 Sep. 01 page 2 of 5 5SDF 03D4502 IF [A] 1200 Tj = 115°C 1100 1000 900 800 700 600 500 400 300 200 100 0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 VF [V] Fig. 1 Typical forward voltage waveform when the diode is turned on with high di/dt. Irr [A] Fig. 2 Forward current vs. forward voltage. Err [J] 400 2.0 Tj = 115°C Tj = 115°C diF/dt = 250 A/µs VDClink = 2700 V 1.8 diF/dt = 250 A/µs VDClink = 2700 V 350 1.6 300 1.4 250 1.2 200 1.0 0.8 150 0.6 100 0.4 50 0.2 0 0.0 0 100 200 300 400 500 600 700 IFQ [A] Fig. 3 Diode reverse recovery current vs. turnoff current. 0 100 200 300 400 500 600 700 IFQ [A] Fig. 4 Diode turn-off energy per pulse vs. turnoff current. ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1117-02 Sep. 01 page 3 of 5 5SDF 03D4502 IFQ [A] 900 800 Tj = 0 - 115°C diF/dt = 250 A/µs VRM ≤ VRRM 700 600 500 400 300 200 100 0 0 1000 2000 3000 4000 VDClink [V] Fig. 5 Typical current and voltage waveforms at turn-off in a circuit with voltage clamp. Fig. 6 Max. repetitive diode forward current. ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1117-02 Sep. 01 page 4 of 5 5SDF 03D4502 Fig. 7 Outline drawing. All dimensions are in millimeters and represent nominal values unless stated otherwise. ABB Semiconductors AG reserves the right to change specifications without notice. ABB Semiconductors AG Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)62 888 6419 +41 (0)62 888 6306 [email protected] www.abbsem.com Doc. No. 5SYA1117-02 Sep. 01