VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 2500 420 8.5 1.7 0.62 1500 V A kA V mΩ Ω V Fast Recovery Diode 5SDF 05D2505 Doc. No. 5SYA1114-03 Sep. 01 • Patented free-floating silicon technology • Low on-state and switching losses • Optimized for use as freewheeling diode in GTO converters • Standard press-pack housing, hermetically cold-welded • Cosmic radiation withstand rating Blocking VRRM Repetitive peak reverse voltage IRRM Repetitive peak reverse current VDClink Permanent DC voltage for 100 FIT failure rate VDClink Permanent DC voltage for 100 FIT failure rate Mechanical data Fm a 2500 V ≤ Half sine wave, tP = 10 ms, f = 50 Hz 50 mA 1500 VR = VRRM, Tj = 125°C V 100% Duty V 5% Duty (see Fig. 12) Mounting force min. 10 kN max. 12 kN Acceleration: 50 m/s 2 Device clamped 200 m/s 2 m Weight 0.25 kg DS Surface creepage distance ≥ 30 mm Da Air strike distance ≥ 20 mm Device unclamped ABB Semiconductors AG reserves the right to change specifications without notice. Ambient cosmic radiation at sea level in open air. 5SDF 05D2505 On-state (see Fig. 2, 3) IFAVM Max. average on-state current 420 A IFRMS Max. RMS on-state current 670 A IFSM Max. peak non-repetitive 8.5 kA tp = 10 ms Before surge: surge current 27 kA tp = 1 ms Tc = Tj = 125°C 2 0.36⋅106 A s tp = 10 ms 2 0.36⋅106 A s tp = 1 ms IF = òI2dt Max. surge current integral Half sine wave, Tc = 85°C VF Forward voltage drop 2.3 V VF0 Threshold voltage 1.7 V rF Slope resistance 0.62 mΩ ≤ After surge: VR ≈ 0 V 1000 A Approximation for IF Tj = 125°C = 500…3500 A Turn-on (see Fig. 4, 5) Vfr Peak forward recovery voltage ≤ 16 V di/dt = 500 A/µs, Tj = 125°C Turn-off (see Fig. 6 to 11) Irr Reverse recovery current ≤ 470 A di/dt = 300 A/µs, IF = 700 A, Qrr Reverse recovery charge ≤ 840 µC Tj = 125°C, VRM = 2300 V, Err Turn-off energy ≤ 0.34 J CS = 2µF (GTO snubber circuit) Thermal (see Fig. 1) Tj Operating junction temperature range -40...125°C Tstg Storage temperature range -40...125°C RthJC Thermal resistance junction to case RthCH Thermal resistance case to heatsink ≤ 80 K/kW Anode side cooled ≤ 80 K/kW Cathode side cooled ≤ 40 K/kW Double side cooled ≤ 16 K/kW Single side cooled ≤ 8 K/kW Double side cooled Fm = 10… 12 kN Analytical function for transient thermal impedance. i n Z thJC (t) = å i =1 R i (1 - e - t /τ i ) 1 2 3 4 R i(K/kW) 20.95 10.57 7.15 1.33 τi(s) 0.396 0.072 0.009 0.0044 Fm = 10… 12 kN Double side cooled ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1114-03 Sep. 01 page 2 of 6 5SDF 05D2505 Fig. 1 Fig. 2 Transient thermal impedance (junction-to-case) vs. time in analytical and graphical form (max. values). Forward current vs. forward voltage (typ. and max. values) and linear approximation of max. curve at 125°C. Fig. 3 Surge current and fusing integral vs. pulse width (max. values) for non-repetitive, halfsinusoidal surge current pulses. ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1114-03 Sep. 01 page 3 of 6 5SDF 05D2505 Fig. 4 Fig. 6 Typical forward voltage waveform when the diode is turned on with a high di/dt. Fig. 5 Forward recovery voltage vs. turn-on di/dt (max. values). Typical current and voltage waveforms at turn-off when the diode is connected to an RCD snubber, as often used in GTO circuits. ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1114-03 Sep. 01 page 4 of 6 5SDF 05D2505 Fig. 7 Reverse recovery current vs. turn off di/dt (max. values). Fig. 8 Reverse recovery charge vs. turn off di/dt (max. values). Fig. 9 Turn-off energy vs. turn-off di/dt for IF = 300 A (max. values). Fig. 10 Turn-off energy vs. turn-off di/dt for IF = 700 A (max. values). ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1114-03 Sep. 01 page 5 of 6 5SDF 05D2505 Fig. 11 Turn-off energy vs. turn-off di/dt for IF = 2000 A (max. values). Fig. 12 Outline drawing. All dimensions are in millimeters and represent nominal values unless stated otherwise. ABB Semiconductors AG reserves the right to change specifications without notice. ABB Semiconductors AG Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)62 888 6419 +41 (0)62 888 6306 [email protected] www.abbsem.com Doc. No. 5SYA1114-03 Sep. 01