VRRM IF(AV)M IFSM V(T0) rT VDC-link = = = = = = 4500 900 16×103 1.8 0.9 2400 V A A V mΩ V Fast Recovery Diode 5SDF 07H4501 Doc. No. 5SYA1111-02 Oct. 06 • Patented free-floating silicon technology • Low switching losses • Optimized for use as large-area snubber diode in GTO converters • Industry standard housing • Cosmic radiation withstand rating Blocking Maximum rated values 1) Parameter Symbol Conditions Value Unit Repetitive peak reverse voltage Permanent DC voltage for 100 FIT failure rate Permanent DC voltage for 100 FIT failure rate VRRM f = 50 Hz, tp = 10ms, Tvj = 125°C 4500 V VDC-link Ambient cosmic radiation at sea level in open air. (100% Duty) Ambient cosmic radiation at sea level in open air. (5% Duty) 2400 V 2800 V max Unit VDC-link Characteristic values Parameter Symbol Conditions Repetitive peak reverse current IRRM min typ VR = VRRM, Tvj = 125°C 200 mA Mechanical data Maximum rated values 1) Parameter Symbol Conditions Mounting force Fm Acceleration a Acceleration a min 36 typ 40 max Unit 44 kN Device unclamped 50 m/s 2 Device clamped 200 m/s 2 Characteristic values Parameter Symbol Conditions min typ Weight m Housing thickness H 26.0 Surface creepage distance DS 30 mm Air strike distance Da 20 mm Note 1 Maximum rated values indicate limits beyond which damage to the device may occur ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. max Unit 0.83 kg 26.4 mm 5SDF 07H4501 On-state Maximum rated values 1) Parameter Symbol Conditions Max. average on-state current IF(AV)M Max. RMS on-state current IF(RMS) Max. peak non-repetitive surge current IFSM Limiting load integral I2t Max. peak non-repetitive surge current IFSM Limiting load integral I2t min typ max Half sine wave, TC = 85 °C Unit 900 A 1400 A 3 A 6 A2s 3 A 800×10 3 A2s max Unit 16×10 tp = 10 ms, Tvj = 125°C, VR = 0 V 1.28×10 tp = 1 ms, Tvj = 125°C, VR = 0 V 40×10 Characteristic values Parameter Symbol Conditions min typ On-state voltage VF IF = 3000 A, Tvj = 125°C 4.5 V Threshold voltage V(T0) 1.8 V Slope resistance rT Tvj = 125°C IF = 500...5000 A 0.9 mΩ max Unit 55 V Turn-on Characteristic values Parameter Symbol Conditions Peak forward recovery voltage VFRM min typ dIF/dt = 500 A/µs, Tvj = 125°C Turn-off Characteristic values Parameter Symbol Conditions max Unit Reverse recovery current IRM dIF/dt = 100 A/µs, Tj = 125 °C, min typ 260 A Reverse recovery charge Qrr IFQ = 1000 A, 1700 µC Turn-off energy Err RS = 22 Ω, CS = 0.22 µF TBD J ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1111-02 Oct. 06 page 2 of 6 5SDF 07H4501 Thermal Maximum rated values Note 1 Parameter Symbol Conditions min max Unit Operating junction temperature range Tvj -40 125 °C -40 125 °C Storage temperature range Tstg typ Characteristic values Parameter Symbol Conditions max Unit Double-side cooled Fm = 36...44 kN 12 K/kW Rth(j-c)A Anode-side cooled Fm = 36...44 kN 24 K/kW Rth(j-c)C Cathode-side cooled Fm = 36...44 kN 24 K/kW Double-side cooled Fm = 36...44 kN 3 K/kW Single-side cooled Fm = 36...44 kN 6 K/kW Thermal resistance junction Rth(j-c) to case Thermal resistance case to Rth(c-h) heatsink Rth(c-h) min typ Analytical function for transient thermal impedance: n Zth(j-c) (t) = ∑ R th i (1 - e-t/τ i ) i =1 i 1 2 3 4 Rth i(K/kW) 7.440 2.000 1.840 0.710 τi(s) 0.4700 0.0910 0.0110 0.0047 Fig. 1 Transient thermal impedance junction-to-case ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1111-02 Oct. 06 page 3 of 6 5SDF 07H4501 Fig. 2 Max. on-state voltage characteristics Fig. 3 Upper scatter range of repetitive reverse recovery charge vs reverse current rise rate. Fig. 4 Upper scatter range of reverse recovery current vs reverse current rise rate ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1111-02 Oct. 06 page 4 of 6 5SDF 07H4501 Fig. 5 Forward recovery vs. turn on di/dt (max. values) VF(t), IF (t) dIF/dt -dIF/dt VFR IF (t) IF (t) QRR VF (t) VF (t) tfr t IR (t) tfr (typ) 10 µs IRM VR (t) VRM Fig. 6 General current and voltage waveforms Li IF VDC-link DS RS DUT LLoad CS Fig. 7 Test circuit. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1111-02 Oct. 06 page 5 of 6 5SDF 07H4501 Fig. 8 Outline drawing, all dimensions are in millimeters and represent nominal values unless stated otherwise Related documents: Doc. Nr Titel 5SYA 2036 Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors 5SZK 9104 Specification of environmental class for pressure contact diodes, PCTs and GTO, STORAGE available on request, please contact factory 5SZK 9105 Specification of environmental class for pressure contact diodes, PCTs and GTO, TRANSPORTATION available on request, please contact factory Please refer to http://www.abb.com/semiconductors for current version of documents. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 [email protected] www.abb.com/semiconductors Doc. No. 5SYA1111-02 Oct. 06