ABB 5SDF07H4501

VRRM
IF(AV)M
IFSM
V(T0)
rT
VDC-link
=
=
=
=
=
=
4500
900
16×103
1.8
0.9
2400
V
A
A
V
mΩ
V
Fast Recovery Diode
5SDF 07H4501
Doc. No. 5SYA1111-02 Oct. 06
• Patented free-floating silicon technology
• Low switching losses
• Optimized for use as large-area snubber diode in GTO
converters
• Industry standard housing
• Cosmic radiation withstand rating
Blocking
Maximum rated values
1)
Parameter
Symbol Conditions
Value
Unit
Repetitive peak reverse voltage
Permanent DC voltage for 100 FIT
failure rate
Permanent DC voltage for 100 FIT
failure rate
VRRM
f = 50 Hz, tp = 10ms, Tvj = 125°C
4500
V
VDC-link
Ambient cosmic radiation at sea level in open
air. (100% Duty)
Ambient cosmic radiation at sea level in open
air. (5% Duty)
2400
V
2800
V
max
Unit
VDC-link
Characteristic values
Parameter
Symbol Conditions
Repetitive peak reverse current
IRRM
min
typ
VR = VRRM, Tvj = 125°C
200
mA
Mechanical data
Maximum rated values
1)
Parameter
Symbol Conditions
Mounting force
Fm
Acceleration
a
Acceleration
a
min
36
typ
40
max
Unit
44
kN
Device unclamped
50
m/s
2
Device clamped
200
m/s
2
Characteristic values
Parameter
Symbol Conditions
min
typ
Weight
m
Housing thickness
H
26.0
Surface creepage distance
DS
30
mm
Air strike distance
Da
20
mm
Note 1 Maximum rated values indicate limits beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
max
Unit
0.83
kg
26.4
mm
5SDF 07H4501
On-state
Maximum rated values
1)
Parameter
Symbol Conditions
Max. average on-state
current
IF(AV)M
Max. RMS on-state current
IF(RMS)
Max. peak non-repetitive
surge current
IFSM
Limiting load integral
I2t
Max. peak non-repetitive
surge current
IFSM
Limiting load integral
I2t
min
typ
max
Half sine wave, TC = 85 °C
Unit
900
A
1400
A
3
A
6
A2s
3
A
800×10
3
A2s
max
Unit
16×10
tp = 10 ms, Tvj = 125°C, VR = 0 V
1.28×10
tp = 1 ms, Tvj = 125°C, VR = 0 V
40×10
Characteristic values
Parameter
Symbol Conditions
min
typ
On-state voltage
VF
IF = 3000 A, Tvj = 125°C
4.5
V
Threshold voltage
V(T0)
1.8
V
Slope resistance
rT
Tvj = 125°C
IF = 500...5000 A
0.9
mΩ
max
Unit
55
V
Turn-on
Characteristic values
Parameter
Symbol Conditions
Peak forward recovery
voltage
VFRM
min
typ
dIF/dt = 500 A/µs, Tvj = 125°C
Turn-off
Characteristic values
Parameter
Symbol Conditions
max
Unit
Reverse recovery current
IRM
dIF/dt = 100 A/µs, Tj = 125 °C,
min
typ
260
A
Reverse recovery charge
Qrr
IFQ = 1000 A,
1700
µC
Turn-off energy
Err
RS = 22 Ω, CS = 0.22 µF
TBD
J
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1111-02 Oct. 06
page 2 of 6
5SDF 07H4501
Thermal
Maximum rated values
Note 1
Parameter
Symbol Conditions
min
max
Unit
Operating junction
temperature range
Tvj
-40
125
°C
-40
125
°C
Storage temperature range Tstg
typ
Characteristic values
Parameter
Symbol Conditions
max
Unit
Double-side cooled
Fm = 36...44 kN
12
K/kW
Rth(j-c)A
Anode-side cooled
Fm = 36...44 kN
24
K/kW
Rth(j-c)C
Cathode-side cooled
Fm = 36...44 kN
24
K/kW
Double-side cooled
Fm = 36...44 kN
3
K/kW
Single-side cooled
Fm = 36...44 kN
6
K/kW
Thermal resistance junction Rth(j-c)
to case
Thermal resistance case to Rth(c-h)
heatsink
Rth(c-h)
min
typ
Analytical function for transient thermal
impedance:
n
Zth(j-c) (t) = ∑ R th i (1 - e-t/τ i )
i =1
i
1
2
3
4
Rth i(K/kW)
7.440
2.000
1.840
0.710
τi(s)
0.4700
0.0910
0.0110
0.0047
Fig. 1 Transient thermal impedance junction-to-case
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1111-02 Oct. 06
page 3 of 6
5SDF 07H4501
Fig. 2 Max. on-state voltage characteristics
Fig. 3 Upper scatter range of repetitive reverse
recovery charge vs reverse current rise rate.
Fig. 4 Upper scatter range of reverse recovery
current vs reverse current rise rate
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1111-02 Oct. 06
page 4 of 6
5SDF 07H4501
Fig. 5 Forward recovery vs. turn on di/dt (max.
values)
VF(t), IF (t)
dIF/dt
-dIF/dt
VFR
IF (t)
IF (t)
QRR
VF (t)
VF (t)
tfr
t
IR (t)
tfr (typ)
10 µs
IRM
VR (t)
VRM
Fig. 6 General current and voltage waveforms
Li
IF
VDC-link
DS
RS
DUT
LLoad
CS
Fig. 7 Test circuit.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1111-02 Oct. 06
page 5 of 6
5SDF 07H4501
Fig. 8 Outline drawing, all dimensions are in millimeters and represent nominal values unless stated otherwise
Related documents:
Doc. Nr
Titel
5SYA 2036
Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors
5SZK 9104
Specification of environmental class for pressure contact diodes, PCTs and GTO, STORAGE available on request, please
contact factory
5SZK 9105
Specification of environmental class for pressure contact diodes, PCTs and GTO, TRANSPORTATION available on
request, please contact factory
Please refer to http://www.abb.com/semiconductors for current version of documents.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone
Fax
Email
Internet
+41 (0)58 586 1419
+41 (0)58 586 1306
abbsem@ch.abb.com
www.abb.com/semiconductors
Doc. No. 5SYA1111-02 Oct. 06