ABB 5SDF08H6005

VRRM
IF(AV)M
IFSM
V(T0)
rT
VDClink
=
=
=
=
=
=
5500
585
18×103
4.5
1.3
3300
V
A
A
V
mΩ
V
Fast Recovery Diode
5SDF 08H6005
PRELIMINARY
Doc. No. 5SYA1116-01 Oct. 06
• Patented free-floating technology
• Industry standard housing
• Cosmic radiation withstand rating
• Low on-state and switching losses
• Optimized for snubberless operation
Blocking
Maximum rated values
1)
Parameter
Symbol Conditions
Value
Unit
Repetitive peak reverse voltage
Permanent DC voltage for 100 FIT
failure rate
Permanent DC voltage for 100 FIT
failure rate
VRRM
f = 50 Hz, tp = 10ms, Tvj = 115°C
5500
V
VDC-link
Ambient cosmic radiation at sea level in open
air. (100% Duty)
Ambient cosmic radiation at sea level in open
air. (5% Duty)
3300
V
3900
V
max
Unit
VDC-link
Characteristic values
Parameter
Symbol Conditions
Repetitive peak reverse current
IRRM
min
typ
VR = VRRM, Tvj = 115°C
30
mA
Mechanical data
Maximum rated values
1)
Parameter
Symbol Conditions
Mounting force
Fm
Acceleration
a
Acceleration
a
min
42
typ
40
max
Unit
46
kN
Device unclamped
50
m/s
2
Device clamped
200
m/s
2
Characteristic values
Parameter
Symbol Conditions
min
typ
Weight
m
Housing thickness
H
26.2
Surface creepage distance
DS
30
mm
Air strike distance
Da
20
mm
Note 1 Maximum rated values indicate limits beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
max
Unit
0.83
kg
26.6
mm
5SDF 08H6005
On-state
Maximum rated values
1)
Parameter
Symbol Conditions
Max. average on-state
current
IF(AV)M
Max. RMS on-state current
IF(RMS)
Max. peak non-repetitive
surge current
IFSM
Limiting load integral
I2t
Max. peak non-repetitive
surge current
IFSM
Limiting load integral
I2t
min
typ
Half sine wave, TC = 70 °C
max
Unit
585
A
920
A
3
A
6
A2s
3
A
800×10
3
A2s
max
Unit
18×10
tp = 10 ms, Tvj = 115°C, VR = 0 V
1.62×10
tp = 1 ms, Tvj = 115°C, VR = 0 V
40×10
Characteristic values
Parameter
Symbol Conditions
min
typ
On-state voltage
VF
IF = 1800 A, Tvj = 115°C
6.85
V
Threshold voltage
V(T0)
4.5
V
Slope resistance
rT
Tvj = 115°C
IF = 400...2500 A
1.3
mΩ
max
Unit
370
V
max
Unit
440
A/µs
Turn-on
Characteristic values
Parameter
Symbol Conditions
Peak forward recovery
voltage
VFRM
min
typ
dIF/dt = 1000 A/µs, Tvj = 115°C
Turn-off
Maximum rated values
1)
Parameter
Symbol Conditions
Max. decay rate of on-state di/dtcrit
current
min
typ
IFM = 1800 A, Tvj = 115 °C
VDC-link = 3300 V
Characteristic values
Parameter
Symbol Conditions
max
Unit
Reverse recovery current
IRM
IFM = 1800 A, VDC-Link = 3300 V
min
typ
900
A
Turn-off energy
Err
-dIF/dt = 440 A/µs, LCL = 300 nH
6.5
J
CCL = 10 µF, RCL = 0.65 Ω,
Tvj = 115°C, DCL = 5SDF 08H6005
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1116-01 Oct. 06
page 2 of 6
5SDF 08H6005
Thermal
Maximum rated values
Note 1
Parameter
Symbol Conditions
min
max
Unit
Operating junction
temperature range
Tvj
-40
115
°C
-40
125
°C
Storage temperature range Tstg
typ
Characteristic values
Parameter
Symbol Conditions
max
Unit
Double-side cooled
Fm = 42...46 kN
12
K/kW
Rth(j-c)A
Anode-side cooled
Fm = 42...46 kN
24
K/kW
Rth(j-c)C
Cathode-side cooled
Fm = 42...46 kN
24
K/kW
Double-side cooled
Fm = 42...46 kN
3
K/kW
Single-side cooled
Fm = 42...46 kN
6
K/kW
Thermal resistance junction Rth(j-c)
to case
Thermal resistance case to Rth(c-h)
heatsink
Rth(c-h)
min
typ
Analytical function for transient thermal
impedance:
n
Zth(j-c) (t) = ∑ R th i (1 - e-t/τ i )
i =1
i
1
2
3
4
Rth i(K/kW)
7.713
2.766
1.044
0.480
τi(s)
0.5316
0.0668
0.0078
0.0020
Fig. 1 Transient thermal impedance (junction to
case) vs. time in analytical and graphical form
(max. values)
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1116-01 Oct. 06
page 3 of 6
5SDF 08H6005
IF [A]
Err [J]
7
3000
Tj = 115°C
diF/dt = 440 A/µs
VDClink = 3300 V
Tj = 115°C
6
2500
5
2000
4
1500
3
1000
2
500
1
0
0
4
5
6
7
8
9
0
400
800
1200
VF [V]
Fig. 2 Max. on-state voltage characteristics
1600
2000
IFQ [A]
Fig. 3 Diode turn-off energy per pulse vs. turn-off
current
Irr [A]
1000
Tj = 115°C
diF/dt = 440 A/µs
VDClink = 3300 V
900
800
700
600
500
400
300
200
100
0
0
400
800
1200
1600
2000
IFQ [A]
Fig. 4 Diode reverse recovery current vs. turn-off
current
Fig. 5 Diode Safe Operating Area
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1116-01 Oct. 06
page 4 of 6
5SDF 08H6005
VF(t), IF (t)
dIF/dt
VFR
-dIF/dt
IF (t)
IF (t)
VF (t)
VF (t)
Qrr
t
tfr
tfr (typ)
10 µs
VR (t)
IRM
Fig. 6 General current and voltage waveforms
Li
LCL
DCL
RS
IF
VLC
CCL
DUT
LLoad
Fig. 7 Test circuit.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1116-01 Oct. 06
page 5 of 6
5SDF 08H6005
Fig. 8 Outline drawing, all dimensions are in millimeters and represent nominal values unless stated otherwise
Related documents:
Doc. Nr
Titel
5SYA 2036
Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors
5SZK 9104
Specification of environmental class for pressure contact diodes, PCTs and GTO, STORAGE available on request, please
contact factory
5SZK 9105
Specification of environmental class for pressure contact diodes, PCTs and GTO, TRANSPORTATION available on
request, please contact factory
Please refer to http://www.abb.com/semiconductors for current version of documents.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone
Fax
Email
Internet
+41 (0)58 586 1419
+41 (0)58 586 1306
[email protected]
www.abb.com/semiconductors
Doc. No. 5SYA1116-01 Oct. 06