VRRM IF(AV)M IFSM V(T0) rT VDC-link = = = = = = 4500 1400 25×103 1.2 0.32 2200 V A A V mΩ V Fast Recovery Diode 5SDF 14H4505 Doc. No. 5SYA1110-02 Oct. 06 • Patented free-floating silicon technology • Low on-state and switching losses • Optimized for use as freewheeling diode in GTO converters with low DC-link voltages • Industry standard housing • Cosmic radiation withstand rating Blocking Maximum rated values 1) Parameter Symbol Conditions Value Unit Repetitive peak reverse voltage Permanent DC voltage for 100 FIT failure rate VRRM f = 50 Hz, tp = 10ms, Tvj = 125°C, Note 1 4500 V VDC-link Ambient cosmic radiation at sea level in open air. (100% Duty) 2200 V max Unit Characteristic values Parameter Symbol Conditions Repetitive peak reverse current IRRM min typ VR = VRRM, Tvj = 125°C 50 mA Note 1: Voltage de-rating factor of 0.11% per °C is applicable for Tvj below 0 °C Mechanical data Maximum rated values 1) Parameter Symbol Conditions Mounting force Fm Acceleration a Acceleration a min 36 typ 40 max Unit 44 kN Device unclamped 50 m/s 2 Device clamped 200 m/s 2 Characteristic values Parameter Symbol Conditions min typ Weight m Housing thickness H 25.9 Surface creepage distance DS 30 mm Air strike distance Da 20 mm Note 1 Maximum rated values indicate limits beyond which damage to the device may occur ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. max Unit 0.83 kg 26.4 mm 5SDF 14H4505 On-state Maximum rated values 1) Parameter Symbol Conditions Max. average on-state current IF(AV)M Max. RMS on-state current IF(RMS) Max. peak non-repetitive surge current IFSM Limiting load integral I2t Max. peak non-repetitive surge current IFSM Limiting load integral I2t min typ Half sine wave, TC = 85 °C max Unit 1400 A 2200 A 3 A 6 A2s 3 A 1.8×10 6 A2s max Unit 2 V 1.2 V 0.32 mΩ max Unit 30 V 25×10 tp = 10 ms, Tvj = 125°C, VR = 0 V 3.13×10 tp = 1 ms, Tvj = 125°C, VR = 0 V 60×10 Characteristic values Parameter Symbol Conditions On-state voltage VF IF = 2500 A, Tvj = 125°C Threshold voltage V(T0) Slope resistance rT Tvj = 125°C IF = 400...4000 A min typ Turn-on Characteristic values Parameter Symbol Conditions Peak forward recovery voltage VFRM min typ dIF/dt = 500 A/µs, Tvj = 125°C Turn-off Characteristic values Parameter Symbol Conditions max Unit Reverse recovery current IRM di/dt = 300 A/µs, IFQ = 1000 A, min typ 1000 A Reverse recovery charge Qrr Tj = 125°C, VRM = 4500 V, 3700 µC Turn-off energy Err CS = 3 µF (GTO snubber circuit) 1.6 J ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1110-02 Oct. 06 page 2 of 7 5SDF 14H4505 Thermal Maximum rated values 1) Parameter Symbol Conditions min max Unit Operating junction temperature range Tvj -40 125 °C -40 125 °C Storage temperature range Tstg typ Characteristic values Parameter Symbol Conditions max Unit Double-side cooled Fm = 36...44 kN 12 K/kW Rth(j-c)A Anode-side cooled Fm = 36...44 kN 24 K/kW Rth(j-c)C Cathode-side cooled Fm = 36...44 kN 24 K/kW Double-side cooled Fm = 36...44 kN 3 K/kW Single-side cooled Fm = 36...44 kN 6 K/kW Thermal resistance junction Rth(j-c) to case Thermal resistance case to Rth(c-h) heatsink Rth(c-h) min typ Analytical function for transient thermal impedance: n Zth(j-c) (t) = ∑ R th i (1 - e-t/τ i ) i =1 i 1 2 3 4 Rth i(K/kW) 7.440 2.000 1.840 0.710 τi(s) 0.4700 0.0910 0.0110 0.0047 Fig. 1 Transient thermal impedance junction-to-case ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1110-02 Oct. 06 page 3 of 7 5SDF 14H4505 5000 max. 25°C 125°C 4000 IF (A) typ. 3000 2000 1000 0 0 1 2 3 4 VF (V) Fig. 2 Max. on-state voltage characteristics Fig. 3 Surge on-state current vs. pulse length. Halfsine wave Fig. 4 Upper scatter range of turn-off energy per pulse vs. turn-off current Fig. 5 Upper scatter range of turn-off energy per pulse vs reverse current rise rate ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1110-02 Oct. 06 page 4 of 7 5SDF 14H4505 Fig. 6 Upper scatter range of repetitive reverse recovery charge vs reverse current rise rate. Fig. 7 Upper scatter range of reverse recovery current vs reverse current rise rate Fig. 8 Forward recovery vs. turn on di/dt (max. values) ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1110-02 Oct. 06 page 5 of 7 5SDF 14H4505 VF(t), IF (t) dIF/dt -dIF/dt VFR IF (t) IF (t) QRR VF (t) VF (t) tfr t IR (t) tfr (typ) 10 µs IRM VR (t) VRM Fig. 9 General current and voltage waveforms Li IF VDC-link DS RS DUT LLoad CS Fig. 10 Test circuit. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1110-02 Oct. 06 page 6 of 7 5SDF 14H4505 Fig. 11 Outline drawing, all dimensions are in millimeters and represent nominal values unless stated otherwise Related documents: Doc. Nr Titel 5SYA 2036 Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors 5SZK 9104 Specification of environmental class for pressure contact diodes, PCTs and GTO, STORAGE available on request, please contact factory 5SZK 9105 Specification of environmental class for pressure contact diodes, PCTs and GTO, TRANSPORTATION available on request, please contact factory Please refer to http://www.abb.com/semiconductors for current version of documents. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 [email protected] www.abb.com/semiconductors Doc. No. 5SYA1110-02 Oct. 06