ABB 5SDF14H4505

VRRM
IF(AV)M
IFSM
V(T0)
rT
VDC-link
=
=
=
=
=
=
4500
1400
25×103
1.2
0.32
2200
V
A
A
V
mΩ
V
Fast Recovery Diode
5SDF 14H4505
Doc. No. 5SYA1110-02 Oct. 06
• Patented free-floating silicon technology
• Low on-state and switching losses
• Optimized for use as freewheeling diode in GTO
converters with low DC-link voltages
• Industry standard housing
• Cosmic radiation withstand rating
Blocking
Maximum rated values
1)
Parameter
Symbol Conditions
Value
Unit
Repetitive peak reverse voltage
Permanent DC voltage for 100 FIT
failure rate
VRRM
f = 50 Hz, tp = 10ms, Tvj = 125°C, Note 1
4500
V
VDC-link
Ambient cosmic radiation at sea level in open
air. (100% Duty)
2200
V
max
Unit
Characteristic values
Parameter
Symbol Conditions
Repetitive peak reverse current
IRRM
min
typ
VR = VRRM, Tvj = 125°C
50
mA
Note 1: Voltage de-rating factor of 0.11% per °C is applicable for Tvj below 0 °C
Mechanical data
Maximum rated values
1)
Parameter
Symbol Conditions
Mounting force
Fm
Acceleration
a
Acceleration
a
min
36
typ
40
max
Unit
44
kN
Device unclamped
50
m/s
2
Device clamped
200
m/s
2
Characteristic values
Parameter
Symbol Conditions
min
typ
Weight
m
Housing thickness
H
25.9
Surface creepage distance
DS
30
mm
Air strike distance
Da
20
mm
Note 1 Maximum rated values indicate limits beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
max
Unit
0.83
kg
26.4
mm
5SDF 14H4505
On-state
Maximum rated values
1)
Parameter
Symbol Conditions
Max. average on-state
current
IF(AV)M
Max. RMS on-state current
IF(RMS)
Max. peak non-repetitive
surge current
IFSM
Limiting load integral
I2t
Max. peak non-repetitive
surge current
IFSM
Limiting load integral
I2t
min
typ
Half sine wave, TC = 85 °C
max
Unit
1400
A
2200
A
3
A
6
A2s
3
A
1.8×10
6
A2s
max
Unit
2
V
1.2
V
0.32
mΩ
max
Unit
30
V
25×10
tp = 10 ms, Tvj = 125°C, VR = 0 V
3.13×10
tp = 1 ms, Tvj = 125°C, VR = 0 V
60×10
Characteristic values
Parameter
Symbol Conditions
On-state voltage
VF
IF = 2500 A, Tvj = 125°C
Threshold voltage
V(T0)
Slope resistance
rT
Tvj = 125°C
IF = 400...4000 A
min
typ
Turn-on
Characteristic values
Parameter
Symbol Conditions
Peak forward recovery
voltage
VFRM
min
typ
dIF/dt = 500 A/µs, Tvj = 125°C
Turn-off
Characteristic values
Parameter
Symbol Conditions
max
Unit
Reverse recovery current
IRM
di/dt = 300 A/µs, IFQ = 1000 A,
min
typ
1000
A
Reverse recovery charge
Qrr
Tj = 125°C, VRM = 4500 V,
3700
µC
Turn-off energy
Err
CS = 3 µF (GTO snubber circuit)
1.6
J
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1110-02 Oct. 06
page 2 of 7
5SDF 14H4505
Thermal
Maximum rated values
1)
Parameter
Symbol Conditions
min
max
Unit
Operating junction
temperature range
Tvj
-40
125
°C
-40
125
°C
Storage temperature range Tstg
typ
Characteristic values
Parameter
Symbol Conditions
max
Unit
Double-side cooled
Fm = 36...44 kN
12
K/kW
Rth(j-c)A
Anode-side cooled
Fm = 36...44 kN
24
K/kW
Rth(j-c)C
Cathode-side cooled
Fm = 36...44 kN
24
K/kW
Double-side cooled
Fm = 36...44 kN
3
K/kW
Single-side cooled
Fm = 36...44 kN
6
K/kW
Thermal resistance junction Rth(j-c)
to case
Thermal resistance case to Rth(c-h)
heatsink
Rth(c-h)
min
typ
Analytical function for transient thermal
impedance:
n
Zth(j-c) (t) = ∑ R th i (1 - e-t/τ i )
i =1
i
1
2
3
4
Rth i(K/kW)
7.440
2.000
1.840
0.710
τi(s)
0.4700
0.0910
0.0110
0.0047
Fig. 1 Transient thermal impedance junction-to-case
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1110-02 Oct. 06
page 3 of 7
5SDF 14H4505
5000
max.
25°C
125°C
4000
IF
(A)
typ.
3000
2000
1000
0
0
1
2
3
4
VF (V)
Fig. 2 Max. on-state voltage characteristics
Fig. 3 Surge on-state current vs. pulse length. Halfsine wave
Fig. 4 Upper scatter range of turn-off energy per
pulse vs. turn-off current
Fig. 5 Upper scatter range of turn-off energy per
pulse vs reverse current rise rate
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1110-02 Oct. 06
page 4 of 7
5SDF 14H4505
Fig. 6 Upper scatter range of repetitive reverse
recovery charge vs reverse current rise rate.
Fig. 7 Upper scatter range of reverse recovery
current vs reverse current rise rate
Fig. 8 Forward recovery vs. turn on di/dt (max.
values)
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1110-02 Oct. 06
page 5 of 7
5SDF 14H4505
VF(t), IF (t)
dIF/dt
-dIF/dt
VFR
IF (t)
IF (t)
QRR
VF (t)
VF (t)
tfr
t
IR (t)
tfr (typ)
10 µs
IRM
VR (t)
VRM
Fig. 9 General current and voltage waveforms
Li
IF
VDC-link
DS
RS
DUT
LLoad
CS
Fig. 10 Test circuit.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1110-02 Oct. 06
page 6 of 7
5SDF 14H4505
Fig. 11 Outline drawing, all dimensions are in millimeters and represent nominal values unless stated otherwise
Related documents:
Doc. Nr
Titel
5SYA 2036
Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors
5SZK 9104
Specification of environmental class for pressure contact diodes, PCTs and GTO, STORAGE available on request, please
contact factory
5SZK 9105
Specification of environmental class for pressure contact diodes, PCTs and GTO, TRANSPORTATION available on
request, please contact factory
Please refer to http://www.abb.com/semiconductors for current version of documents.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone
Fax
Email
Internet
+41 (0)58 586 1419
+41 (0)58 586 1306
abbsem@ch.abb.com
www.abb.com/semiconductors
Doc. No. 5SYA1110-02 Oct. 06