VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 4500 2000 13 1.80 0.85 2200 V A kA V Gate turn-off Thyristor 5SGA 20H4502 mΩ V Doc. No. 5SYA 1210-01 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode • Industry standard housing • Cosmic radiation withstand rating Blocking VGR ≥ 2V VDRM Repetitive peak off-state voltage 4500 V VRRM Repetitive peak reverse voltage 17 V IDRM Repetitive peak off-state current ≤ 100 mA VD = VDRM VGR ≥ 2V IRRM Repetitive peak reverse current ≤ 50 mA VR = VRRM RGK = ∞ VDClink Permanent DC voltage for 100 2200 V FIT failure rate -40 ≤ Tj ≤ 125 °C. Ambient cosmic radiation at sea level in open air. Mechanical data (see Fig. 19) Fm Mounting force A min. 17 kN max. 24 kN Acceleration: Device clamped 50 m/s2 200 m/s2 M Weight 0.8 kg DS Surface creepage distance ≥ 22 mm Da Air strike distance ≥ 13 mm Device unclamped ABB Semiconductors AG reserves the right to change specifications without notice. 5SGA 20H4502 GTO Data On-state ITAVM Max. average on-state current ITRMS Max. RMS on-state current ITSM Max. peak non-repetitive 13 kA tP = 10 ms surge current 24 kA tP = 1 ms After surge: 2 0.85⋅106 A s tP = 10 ms VD = VR = 0V 2 0.29⋅106 A s tP = 1 ms 2000 A I2t Limiting load integral 710 A Half sine wave, TC = 85 °C 1115 A VT On-state voltage 3.50 V IT = VT0 Threshold voltage 1.80 V IT = 400 - 3000 A rT Slope resistance 0.85 mΩ IH Holding current 50 A Tj = 25 °C VGT Gate trigger voltage 1.0 V VD = 24 V IGT Gate trigger current 2.5 A RA = 0.1 Ω VGRM Repetitive peak reverse voltage 17 V IGRM Repetitive peak reverse current 50 mA VGR = VGRM Tj = Tj = 125°C 125 °C Gate Tj = 25 °C Turn-on switching di/dtcrit Max. rate of rise of on-state 400 A/µs f = 200Hz IT = 2000 A, current 600 A/µs f = 1Hz IGM = 30 A, diG/dt = 20 A/µs td Delay time 2.0 µs VD = tr Rise time 6.0 µs IT ton(min) Min. on-time Eon Turn-on energy per pulse 0.5 VDRM Tj Tj = 125 °C = 125 °C = 2000 A di/dt = 200 A/µs 80 µs IGM = 30 A diG/dt = 20 A/µs 2.50 Ws CS = 2000 A VDM = VDRM 4 µF RS = 5Ω Turn-off switching ITGQM Max controllable turn-off current diGQ/dt = 30 A/µs CS = 4 µF LS ≤ 0.3 µH 22.0 µs VD = ½ VDRM VDM = VDRM Tj = ts Storage time tf Fall time 3.0 µs toff(min) Min. off-time 80 µs ITGQ = ITGQM Eoff Turn-off energy per pulse 7.5 Ws CS = IGQM Peak turn-off gate current 725 A LS ≤ 125 °C diGQ/dt = 4 µF RS = 30 A/µs 5Ω 0.3 µH ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA 1210-01 Aug. 2000 page 2 of 9 5SGA 20H4502 Thermal Tj Storage and operating -40...125°C junction temperature range RthJC RthCH Thermal resistance 30 K/kW Anode side cooled junction to case 39 K/kW Cathode side cooled 17 K/kW Double side cooled 10 K/kW Single side cooled 5 K/kW Double side cooled Thermal resistance case to heat sink Analytical function for transient thermal impedance: 4 Z thJC (t) = ∑ R (1 - e i i=1 Fig. 1 - t /τ i ) i 1 2 3 4 RI (K/kW) 11.7 4.7 0.64 0.0001 τi (s) 0.9 0.26 0.002 0.001 Transient thermal impedance, junction to case. ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA 1210-01 Aug. 2000 page 3 of 9 5SGA 20H4502 Fig. 2 On-state characteristics Fig. 4 Surge current and fusing integral vs. pulse width Fig. 3 Average on-state power dissipation vs. average on-state current. ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA 1210-01 Aug. 2000 page 4 of 9 5SGA 20H4502 Fig. 5 Forward blocking voltage vs. gate-cathode resistance. Fig. 7 Forwarde gate current vs. forard gate voltage. Fig. 6 Static dv/dt capability: Forward blocking voltage vs. neg. gate voltage or gate cathode resistance. Fig. 8 Gate trigger current vs. junction temperature ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA 1210-01 Aug. 2000 page 5 of 9 5SGA 20H4502 Fig. 9 Turn-on energy per pulse vs. on-state current and turn-on voltage. Fig. 10 Turn-on energy per pulse vs. on.-state current and current rise rate Common Test conditions for figures 9, 10 and 11: diG/dt CS = 20 A/µs = 4 µF RS =5Ω Tj = 125 °C Definition of Turn-on energy: 20 µ s E on = ∫V D ⋅ ITdt (t = 0, IG = 0.1 ⋅ IGM ) 0 Common Test conditions for figures 12, 13 and 15: Definition of Turn-off energy: E off = 40 µ s ∫V D ⋅ ITdt ( t = 0, IT = 0.9 ⋅ ITGQ ) 0 Fig. 11 Turn-on energy per pulse vs. on-state current and turn-on voltage. ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA 1210-01 Aug. 2000 page 6 of 9 5SGA 20H4502 Fig. 12 Turn-off energy per pulse vs. turn-off current and peak turn-off voltage. Extracted gate charge vs. turn-off current. Fig. 13 Turn-off energy per pulse vs. turn-off current and snubber capacitance. Fig. 14 Required snubber capacitor vs. max allowable turn-off current. Fig. 15 Turn-off energy per pulse, storage time and peak turn-off gate current vs. junction temperature Fig. 16 Storage time and peak turn-off gate current vs. neg. gate current rise rate. Fig. 17 Storage time and peak turn-off gate current vs. turn-off current ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA 1210-01 Aug. 2000 page 7 of 9 5SGA 20H4502 Fig. 18 General current and voltage waveforms with GTO-specific symbols Fig. 19 Outline drawing. All dimensions are in millimeters and represent nominal values unless stated otherwise. ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA 1210-01 Aug. 2000 page 8 of 9 5SGA 20H4502 Reverse avalanche capability In operation with an antiparallel freewheeling diode, the GTO reverse voltage VR may exceed the rate value VRRM due to stray inductance and diode turn-on voltage spike at high di/dt. The GTO is then driven into reverse avalanche. This condition is not dangerous for the GTO provided avalanche time and current are below 10 µs and 1000 A respectively. However, gate voltage must remain negative during this time. Recommendation : VGR = 10… 15 V. ABB Semiconductors AG reserves the right to change specifications without notice. ABB Semiconductors AG Fabrikstrasse 2 CH-5600 Lenzburg, Switzerland Tel: Fax: E-mail Internet +41 (0)62 888 6419 +41 (0)62 888 6306 [email protected] www.abbsem.com Doc. No. 5SYA 1210-01 Aug. 2000