VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 2500 2500 16 1.66 0.57 1400 V A kA V Gate turn-off Thyristor 5SGA 25H2501 mΩ V Doc. No. 5SYA1206-01 Dec. 04 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode • Industry standard housing • Cosmic radiation withstand rating Blocking VGR ≥ 2V V DRM Repetitive peak off-state voltage 2500 V V RRM Repetitive peak reverse voltage 17 V IDRM Repetitive peak off-state current ≤ 30 mA VD = VDRM V GR ≥ 2V IRRM Repetitive peak reverse current ≤ 50 mA VR = VRRM RGK = ∞ V DClink Permanent DC voltage for 100 V -40 ≤ Tj ≤ 125 °C. Ambient cosmic radiation at sea level in open air. 1400 FIT failure rate Mechanical data (see Fig. 19) Fm Mounting force A min. 17 kN max. 24 kN Acceleration: 50 m/s2 Device unclamped Device clamped 200 m/s2 M Weight 0.8 kg DS Surface creepage distance ≥ 22 mm Da Air strike distance ≥ 13 mm ABB Semiconductors AG reserves the right to change specifications without notice. 5SGA 25H2501 GTO Data On-state 830 A Half sine wave, TC = 85 °C ITAVM Max. average on-state current ITRMS Max. RMS on-state current ITSM Max. peak non-repetitive 16 kA tP = 10 ms surge current 32 kA tP = 1 ms After surge: 2 As tP = 10 ms VD = V R = 0V 2 0.51⋅106 A s tP = 1 ms 2 It Limiting load integral 1300 A 1.28⋅10 6 VT On-state voltage 3.10 V IT = VT0 Threshold voltage 1.66 V IT = 200 - 3000 rT Slope resistance 0.57 mΩ IH Holding current 50 A Tj = 25 °C VGT Gate trigger voltage 1.0 V VD = 24 V IGT Gate trigger current 2.5 A RA = 0.1 Ω VGRM Repetitive peak reverse voltage 17 V IGRM Repetitive peak reverse current 50 mA VG = VGRM Tj = 125°C 2500 A Tj = 125 °C 3000 A Gate Tj = 25 °C Turn-on switching di/dtcrit Max. rate of rise of on-state 400 A/µs f = 200Hz IT = 2500 A, current 700 A/µs f = 1Hz IGM = 30 A, diG/dt = 20 A/µs td Delay time 1.5 µs VD = tr Rise time 3.5 µs IT ton(min) Min. on-time Eon Turn-on energy per pulse 0.5 VDRM Tj Tj = 125 °C = 125 °C = 2500 A di/dt = 200 A/µs 120 µs IGM = 30 A diG/dt = 20 A/µs 0.85 Ws CS = 2500 A VDM = V DRM diGQ/dt = CS = 6 µF LS ≤ 0.3 µH 24.0 µs VD = ½ VDRM VDM = V DRM Tj = 6 µF RS = 5Ω Turn-off switching ITGQM Max controllable turn-off current ts Storage time tf Fall time 2.0 µs toff(min) Min. off-time 80 µs ITGQ = ITGQM Eoff Turn-off energy per pulse 3.5 Ws CS = IGQM Peak turn-off gate current 700 A LS ≤ 125 °C diGQ/dt = 6 µF RS = 30 A/µs 30 A/µs 5Ω 0.3 µH ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1206-01 Jun. 04 page 2 of 9 5SGA 25H2501 Thermal Tj Storage and operating -40...125°C junction temperature range RthJC RthCH Thermal resistance 30 K/kW Anode side cooled junction to case 39 K/kW Cathode side cooled 17 K/kW Double side cooled 10 K/kW Single side cooled 5 K/kW Double side cooled Thermal resistance case to heat sink Analytical function for transient thermal impedance: 4 Z thJC (t) = ∑ R (1 - e i i =1 Fig. 1 - t /τ i ) i 1 2 3 4 RI (K/kW) 11.7 4.7 0.64 0.0001 τi (s) 0.9 0.26 0.002 0.001 Transient thermal impedance, junction to case. ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1206-01 Jun. 04 page 3 of 9 5SGA 25H2501 Fig. 2 On-state characteristics Fig. 4 Surge current and fusing integral vs. pulse width Fig. 3 Average on-state power dissipation vs. average on-state current. ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1206-01 Jun. 04 page 4 of 9 5SGA 25H2501 Fig. 5 Forward blocking voltage vs. gate-cathode resistance. Fig. 7 Forwarde gate current vs. forard gate voltage. Fig. 6 Static dv/dt capability: Forward blocking voltage vs. neg. gate voltage or gate cathode resistance. Fig. 8 Gate trigger current vs. junction temperature ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1206-01 Jun. 04 page 5 of 9 5SGA 25H2501 Fig. 9 Turn-on energy per pulse vs. on-state current and turn-on voltage. Fig. 10 Turn-on energy per pulse vs. on.-state current and current rise rate Common Test conditions for figures 9, 10 and 11: diG/dt = 20 A/µs CS = 6 µF RS =5Ω Tj = 125 °C Definition of Turn-on energy: 20 µs E on = ∫V D ⋅ ITdt (t = 0, IG = 0.1 ⋅ IGM ) 0 Common Test conditions for figures 12, 13 and 15: Definition of Turn-off energy: 40 µs E off = ∫V D ⋅ ITdt ( t = 0, IT = 0.9 ⋅ I TGQ ) 0 Fig. 11 Turn-on energy per pulse vs. on-state current and turn-on voltage. ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1206-01 Jun. 04 page 6 of 9 5SGA 25H2501 E off [J] Eoff [J] QGQa [µC] 5SGA 25H2501 5.0 Conditions: V D = ½ VDM , V DM = V DRM CS = 3 µF di GQ /dt = 30 A/µ s RS = 5 Ω 10000 Conditions: 4.5 VD = 0.5⋅VDM 4.0 di GQ / dt = 30 A/µs CS = 6 µF, RS = 5 Ω 3.5 Tj = 125°C QGQa 9000 3.5 8000 3.0 7000 3.0 5SGA 25H2501 4.0 CS = 4 µF T j = 125°C C S = 6 µF 2.5 6000 VDM = VDRM 0.75 VDRM 0.5 VDRM 2.5 2.0 1.5 5000 4000 3000 1.0 2000 0.5 1000 0.0 0 500 1000 1500 0 2500 2000 2.0 1.5 1.0 0.5 0.0 0 500 1000 1500 2000 Fig. 12 Turn-off energy per pulse vs. turn-off current and peak turn-off voltage. Extracted gate charge vs. turn-off current. 2500 ITGQ [A] ITGQ [A] Fig. 13 Turn-off energy per pulse vs. turn-off current and snubber capacitance. Eoff [J] ts [µs] 5 50 4 40 IGQM [A] 5SGA 25H2501 1000 800 I GQM 3 30 600 2 20 tS 400 1 10 Conditions: VD=½ VDM , VDM = VDRM 200 EOFF ITGQ = 2500 A ,di GQ /dt = 30 A/µ s CS = 6 µF, RS = 5 Ω , Tj = 125 °C 0 0 -10 0 10 20 2530 40 50 60 707580 0 90 100 110 120 125 Tj [°C] Fig. 14 Required snubber capacitor vs. max allowable turn-off current. ts [s] 50 Fig. 15 Turn-off energy per pulse, storage time and peak turn-off gate current vs. junction temperature 1000 ts [s] 50 800 40 600 30 IGQM [A] 5SGA 25H2501 40 IGQM 30 I GQM [A] 5SGA 25H2501 1000 800 600 IGQM 20 tS 10 Conditions: ITGQ = 2000 A 400 20 200 10 400 Conditions: diGQ/dt = 30 A/µ s tS Tj = 125 °C Tj = 125 °C 0 0 0 10 20 30 40 50 200 60 0 0 500 1000 di GQ/dt [A/µs] Fig. 16 Storage time and peak turn-off gate current vs. neg. gate current rise rate. 1500 2000 0 2500 ITGQ [A] Fig. 17 Storage time and peak turn-off gate current vs. turn-off current ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1206-01 Jun. 04 page 7 of 9 5SGA 25H2501 Fig. 18 General current and voltage waveforms with GTO-specific symbols Fig. 19 Outline drawing. All dimensions are in millimeters and represent nominal values unless stated otherwise. ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1206-01 Jun. 04 page 8 of 9 5SGA 25H2501 Reverse avalanche capability In operation with an antiparallel freewheeling diode, the GTO reverse voltage VR may exceed the rate value VRRM due to stray inductance and diode turn-on voltage spike at high di/dt. The GTO is then driven into reverse avalanche. This condition is not dangerous for the GTO provided avalanche time and current are below 10 µs and 1000 A respectively. However, gate voltage must remain negative during this time. Recommendation : VGR = 10… 15 V. ABB Semiconductors AG reserves the right to change specifications without notice. ABB Semiconductors AG Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Tel: Fax: E-mail Internet +41 (0)62 888 6419 +41 (0)62 888 6306 [email protected] www.abbsem.com Doc. No. 5SYA1206-01 Jun. 04