ABB 5SGA30J4505

VDRM
ITGQM
ITSM
VT0
rT
VDclink
=
=
=
=
=
=
4500
3000
25×103
1.9
0.53
2200
V
A
A
V
mΩ
V
Asymmetric Gate turn-off
Thyristor
5SGA 30J4505
Doc. No. 5SYA1204-04 Sept. 05
• Patented free-floating silicon technology
• Low on-state and switching losses
• Annular gate electrode
• Industry standard housing
• Cosmic radiation withstand rating
Blocking
Maximum rated values
1)
Parameter
Symbol Conditions
Repetitive peak off-state
voltage
VDRM
Repetitive peak reverse
voltage
VRRM
Permanent DC voltage for
100 FIT failure rate
VDC-link
min
typ
VGR ≥ 2 V
Ambient cosmic radiation at sea level
in open air.
max
Unit
4500
V
17
V
2200
V
max
Unit
Characteristic values
Parameter
Symbol Conditions
min
typ
Repetitive peak off-state
current
IDRM
VD = VDRM, VGR ≥ 2 V
60
mA
Repetitive peak reverse
current
IRRM
VR = VRRM, RGK = ∞ Ω
20
mA
Mechanical data
Maximum rated values
1)
Parameter
Symbol Conditions
Mounting force
Fm
min
typ
max
Unit
36
40
44
kN
min
typ
max
Unit
Characteristic values
Parameter
Symbol Conditions
Pole-piece diameter
Dp
Housing thickness
H
Weight
m
Surface creepage distance
Ds
Anode to Gate
33
mm
Air strike distance
Da
Anode to Gate
15
mm
± 0.1 mm
75
25.6
Note 1 Maximum rated values indicate limits beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
mm
26.0
mm
1.3
kg
5SGA 30J4505
GTO Data
On-state
Maximum rated values
1)
Parameter
Symbol Conditions
Max. average on-state
current
IT(AV)M
Max. RMS on-state current
IT(RMS)
Max. peak non-repetitive
surge current
ITSM
Limiting load integral
I2t
Max. peak non-repetitive
surge current
ITSM
Limiting load integral
I2t
min
typ
Half sine wave, TC = 85 °C
max
Unit
1000
A
1570
tp = ms, Tvj = 125°C, sine wave
After Surge: VD = VR = 0 V
A
3
A
6
A2s
3
A
25×10
3.1×10
tp = ms, Tvj = 125°C, sine wave
After Surge: VD = VR = 0 V
45×10
6
1.01×10
A2s
max
Unit
Characteristic values
Parameter
Symbol Conditions
On-state voltage
VT
IT = 3000 A, Tvj = 125°C
3.5
V
Threshold voltage
V(T0)
1.9
V
Slope resistance
rT
Tvj = 125°C
IT = 500...4000 A
0.53
mΩ
Holding current
IH
Tvj = 25°C
50
A
min
typ
Turn-on switching
Maximum rated values
1)
Parameter
Symbol Conditions
Critical rate of rise of onstate current
diT/dtcr
Critical rate of rise of onstate current
diT/dtcr
Min. on-time
ton
Tvj = 125°C,
IT = 3000 A, IGM = 30 A,
diG/dt = 20 A/µs
min
typ
f = 200 Hz
f = 1 Hz
VD = 0.5 VDRM, Tvj = 125 °C
IT = 3000 A, di/dt = 200 A/µs,
IGM = 30 A, diG/dt = 20 A/µs,
CS = 6 µF, RS = 5 Ω
max
Unit
400
A/µs
800
A/µs
100
µs
Characteristic values
Parameter
Symbol Conditions
Turn-on delay time
td
Rise time
tr
Turn-on energy per pulse
Eon
min
typ
VD = 0.5 VDRM, Tvj = 125 °C
IT = 3000 A, di/dt = 200 A/µs,
IGM = 30 A, diG/dt = 20 A/µs,
CS = 6 µF, RS = 5 Ω
max
Unit
3
µs
6
µs
3
J
max
Unit
3000
A
Turn-off switching
Maximum rated values
1)
Parameter
Max. controllable turn-off
current
Min. off-time
Symbol Conditions
ITGQM
toff
min
typ
VDM ≤ VDRM, diGQ/dt = 40 A/µs,
CS = 6 µF, LS ≤ 0.3 µH
VD = 0.5 VDRM, Tvj = 125 °C
VDM ≤ VDRM, diGQ/dt = 40 A/µs,
ITGQ = ITGQM,
RS = 5 Ω, CS = 6 µF, LS = 0.3 µH
100
µs
Characteristic values
Parameter
Symbol Conditions
Storage time
tS
Fall time
tf
Turn-on energy per pulse
Eoff
Peak turn-off gate current
IGQM
min
typ
VD = 0.5 VDRM, Tvj = 125 °C
VDM ≤ VDRM, diGQ/dt = 40 A/µs,
ITGQ = ITGQM,
RS = 5 Ω, CS = 6 µF, LS = 0.3 µH
max
Unit
25
µs
3
µs
11
J
900
A
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1204-04 Sept. 05
page 2 of 10
5SGA 30J4505
Gate
Maximum rated values
1)
Parameter
Symbol Conditions
Repetitive peak reverse
voltage
VGRM
Repetitive peak reverse
current
IGRM
min
typ
max
Unit
17
V
20
mA
max
Unit
VGR = VGRM
Characteristic values
Parameter
Symbol Conditions
Gate trigger voltage
VGT
Gate trigger current
IGT
min
Tvj = 25°C,
VD = 24 V, RA = 0.1 Ω
typ
1
V
3
A
Thermal
Maximum rated values
1)
max
Unit
Junction operating temperature
Parameter
Symbol
Tvj
Conditions
min
0
typ
125
°C
Storage temperature range
Tstg
0
125
°C
max
Unit
Characteristic values
Parameter
Symbol
Thermal resistance junction to case
Thermal resistance case to heatsink
(Double side cooled)
Conditions
min
typ
Rth(j-c)
Double side cooled
12
K/kW
Rth(j-c)A
Anode side cooled
22
K/kW
Rth(j-c)C
Cathode side cooled
27
K/kW
Rth(c-h)
Single side cooled
6
K/kW
Rth(c-h)
Double side cooled
3
K/kW
Analytical function for transient thermal
impedance:
n
Zth(j - c)(t) = ∑ Ri(1 - e - t/τ i )
i =1
i
1
2
3
4
Ri(K/kW)
5.400
4.500
1.700
0.400
τi(s)
1.2000
0.1700
0.0100
0.0010
Fig. 1 Transient thermal impedance, junction to case
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Doc. No. 5SYA1204-04 Sept. 05
page 3 of 10
5SGA 30J4505
Fig. 2 On-state characteristics
Fig. 3 Average on-state power dissipation vs.
average on-state current
Fig. 4 Surge current and fusing integral vs. pulse
width
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Doc. No. 5SYA1204-04 Sept. 05
page 4 of 10
5SGA 30J4505
Fig. 5 Forward blocking voltage vs. gate-cathode
resistance
Fig. 6 Static dv/dt capability; forward blocking
voltage vs. neg. gate voltage or gate cathode
resistance
Fig. 7 Forward gate current vs. forward gate voltage
Fig. 8 Gate trigger current vs. junction temperature
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1204-04 Sept. 05
page 5 of 10
5SGA 30J4505
Fig. 9 Turn-on energy per pulse vs. on-state current
and turn-on voltage
Fig. 10 Turn-on energy per pulse vs. on-state current
and current rise rate
Common Test conditions:
diG/dt
= 20 A/µs
CS
= 6 µF
RS
=5Ω
Tj
= 125 °C
Definition of Turn-on energy:
20 µ s
E on =
∫V
D
⋅ ITdt
(t = 0, IG = 0.1 ⋅ IGM )
0
Definition of Turn-off energy:
E off =
40 µ s
∫V
D
⋅ ITdt
( t = 0, IT = 0.9 ⋅ ITGQ )
0
Fig. 11 Turn-on energy per pulse vs. on-state current
and turn-on voltage
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1204-04 Sept. 05
page 6 of 10
5SGA 30J4505
Fig. 12 Turn-off energy per pulse vs. turn-off current
and peak turn-off voltage, extracted gate
charge vs. turn-off current
Fig. 13 Turn-off energy per pulse vs. turn-off current
and snubber capacitance
Fig. 14 Required snubber capacitor vs. max
allowable turn-off current
Fig. 15 Turn-off energy per pulse, storage time and
peak turn-off gate current vs. junction
temperature
IGQM [A]
ts [µs]
50
ts [µs]
IGQM [A]
1000
50
1000
800
40
800
30
600
30
600
20
400
20
10
200
10
tS
IGQM
40
IGQM
400
tS
200
diGQ/dt =40 A/µs
Tj = 125 °C
ITGQ = 3000 A
Tj = 125 °C
0
0
10
20
30
40
0
50
60
diGQ/dt [A/µs]
Fig. 16 Storage time and peak turn-off gate current
vs. neg. gate current rise rate
0
0
500
1000
1500
2000
2500
0
3000
ITGQ [A]
Fig. 17 Storage time and peak turn-off gate current
vs. turn-off current
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1204-04 Sept. 05
page 7 of 10
5SGA 30J4505
Fig. 18 General current and voltage waveforms with GTO-specific symbols
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1204-04 Sept. 05
page 8 of 10
5SGA 30J4505
Fig. 19 Outline drawing; all dimensions are in millimeters and represent nominal values unless stated otherwise
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1204-04 Sept. 05
page 9 of 10
5SGA 30J4505
Reverse avalanche capability
In operation with an antiparallel freewheeling diode, the GTO reverse voltage VR may exceed the rate value VRRM
due to stray inductance and diode turn-on voltage spike at high di/dt. The GTO is then driven into reverse
avalanche. This condition is not dangerous for the GTO provided avalanche time and current are below 10 µs
and 1000 A respectively. However, gate voltage must remain negative during this time. Recommendation : VGR =
10… 15 V.
Related documents:
5SYA 2036
5SYA 2046
5SZK 9104
5SZK 9105
Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors
Cosmic Ray
Specification of enviromental class for pressure contact GTO, STORAGE available on request, please contact factory
Specification of enviromental class for pressure contact GTO, TRANSPORTATION available on request, please contact
factory
Please refer to http://www.abb.com/semiconductors for current version of documents.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone
Fax
Email
Internet
+41 (0)58 586 1419
+41 (0)58 586 1306
abbsem@ch.abb.com
www.abb.com/semiconductors
Doc. No. 5SYA1204-04 Sept. 05