VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 4500 3000 24 1.80 0.70 3000 V A kA V Gate turn-off Thyristor 5SGF 30J4502 mΩ V PRELIMINARY Doc. No. 5SYA 1211-04 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode • Industry standard housing • Cosmic radiation withstand rating The 5SGF 30J4502 is a 85 mm buffered layer GTO with exceptionally low dynamic and static losses designed to retro-fit all former 3 kA GTOs of the same voltage. It offers optimal trade-off between on-state and switching losses and is encapsulated in an industry-standard press pack housing 108 mm wide and 26 mm thick. Blocking VGR ≥ 2V VDRM Repetitive peak off-state voltage 4500 V VRRM Repetitive peak reverse voltage 17 V IDRM Repetitive peak off-state current ≤ 100 mA VD = VDRM VGR ≥ 2V IRRM Repetitive peak reverse current ≤ 50 mA VR = VRRM RGK = ∞ VDClink Permanent DC voltage for 100 3000 V FIT failure rate -40 ≤ Tj ≤ 125 °C. Ambient cosmic radiation at sea level in open air. Mechanical data (see Fig. 19) Fm Mounting force A min. 28 kN max. 38 kN Acceleration: Device unclamped Device clamped 50 m/s2 200 m/s2 M Weight 1.3 kg DS Surface creepage distance ≥ 33 mm Da Air strike distance ≥ 15 mm ABB Semiconductors AG reserves the right to change specifications without notice. 5SGF 30J4502 GTO Data On-state ITAVM Max. average on-state current ITRMS Max. RMS on-state current ITSM Max. peak non-repetitive 24 kA tP = 10 ms surge current 40 kA tP = 1 ms After surge: 2 2.88⋅106 A s tP = 10 ms VD = VR = 0V 2 0.80⋅106 A s tP = 1 ms 3000 A I2t Limiting load integral 960 A Half sine wave, TC = 85 °C 1510 A VT On-state voltage 3.90 V IT = VT0 Threshold voltage 1.80 V IT = 400 - 4000 A rT Slope resistance 0.70 mΩ IH Holding current 100 A Tj = 25 °C VGT Gate trigger voltage 1.2 V VD = 24 V IGT Gate trigger current 2.5 A RA = 0.1 Ω VGRM Repetitive peak reverse voltage 17 V IGRM Repetitive peak reverse current 20 mA VGR = VGRM Tj = Tj = 125°C 125 °C Gate Tj = 25 °C Turn-on switching di/dtcrit Max. rate of rise of on-state current 500 A/µs f = 200Hz IT = 3000 A, 1000 A/µs f = 1Hz IGM = 25 A, diG/dt = 20 A/µs td Delay time 2.5 µs VD = tr Rise time 5.0 µs IT ton(min) Min. on-time Eon Turn-on energy per pulse 0.5 VDRM Tj Tj = 125 °C = 125 °C = 3000 A di/dt = 300 A/µs 100 µs IGM = 25 A diG/dt = 20 A/µs 2.50 Ws CS = 3000 A VDM = VDRM 3 µF RS = 5Ω Turn-off switching ITGQM Max controllable turn-off current diGQ/dt = 40 A/µs CS = 3 µF LS ≤ 0.2 µH 25.0 µs VD = ½ VDRM VDM = VDRM Tj = ts Storage time tf Fall time 3.0 µs toff(min) Min. off-time 100 µs ITGQ = ITGQM Eoff Turn-off energy per pulse 10.0 Ws CS = IGQM Peak turn-off gate current 800 A LS ≤ 125 °C diGQ/dt = 3 µF RS = 40 A/µs 5Ω 0.2 µH ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA 1211-04 Aug. 2000 page 2 of 9 5SGF 30J4502 Thermal Tj Storage and operating -40...125°C junction temperature range RthJC RthCH Thermal resistance 22 K/kW Anode side cooled junction to case 27 K/kW Cathode side cooled 12 K/kW Double side cooled Thermal resistance case to 6 K/kW Single side cooled heat sink 3 K/kW Double side cooled Analytical function for transient thermal impedance: 4 Z thJC (t) = ∑ R (1 - e i i=1 Fig. 1 - t /τ i ) i 1 2 3 4 RI (K/kW) 5.4 4.5 1.7 0.4 τi (s) 1.2 0.17 0.01 0.001 Transient thermal impedance, junction to case. ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA 1211-04 Aug. 2000 page 3 of 9 5SGF 30J4502 Fig. 2 On-state characteristics Fig. 4 Surge current and fusing integral vs. pulse width Fig. 3 Average on-state power dissipation vs. average on-state current. ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA 1211-04 Aug. 2000 page 4 of 9 5SGF 30J4502 Fig. 5 Forward blocking voltage vs. gate-cathode resistance. Fig. 7 Forwarde gate current vs. forard gate voltage. Fig. 6 Static dv/dt capability: Forward blocking voltage vs. neg. gate voltage or gate cathode resistance. Fig. 8 Gate trigger current vs. junction temperature ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA 1211-04 Aug. 2000 page 5 of 9 5SGF 30J4502 Fig. 9 Turn-on energy per pulse vs. on-state current and turn-on voltage. Fig. 10 Turn-on energy per pulse vs. on.-state current and current rise rate Common Test conditions for figures 9, 10 and 11: diG/dt CS = 20 A/µs = 3 µF RS =5Ω Tj = 125 °C Definition of Turn-on energy: 20 µ s E on = ∫V D ⋅ ITdt (t = 0, IG = 0.1 ⋅ IGM ) 0 Common Test conditions for figures 12, 13 and 15: Definition of Turn-off energy: E off = 40 µ s ∫V D ⋅ ITdt ( t = 0, IT = 0.9 ⋅ ITGQ ) 0 Fig. 11 Turn-on energy per pulse vs. on-state current and turn-on voltage. ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA 1211-04 Aug. 2000 page 6 of 9 5SGF 30J4502 Fig. 12 Turn-off energy per pulse vs. turn-off current and peak turn-off voltage. Extracted gate charge vs. turn-off current. Fig. 13 Turn-off energy per pulse vs. turn-off current and snubber capacitance. Fig. 14 Required snubber capacitor vs. max allowable turn-off current. Fig. 15 Turn-off energy per pulse, storage time and peak turn-off gate current vs. junction temperature Fig. 16 Storage time and peak turn-off gate current vs. neg. gate current rise rate. Fig. 17 Storage time and peak turn-off gate current vs. turn-off current ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA 1211-04 Aug. 2000 page 7 of 9 5SGF 30J4502 Fig. 18 General current and voltage waveforms with GTO-specific symbols Fig. 19 Outline drawing. All dimensions are in millimeters and represent nominal values unless stated otherwise. ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA 1211-04 Aug. 2000 page 8 of 9 5SGF 30J4502 Reverse avalanche capability In operation with an antiparallel freewheeling diode, the GTO reverse voltage VR may exceed the rate value VRRM due to stray inductance and diode turn-on voltage spike at high di/dt. The GTO is then driven into reverse avalanche. This condition is not dangerous for the GTO provided avalanche time and current are below 10 µs and 1000 A respectively. However, gate voltage must remain negative during this time. Recommendation : VGR = 10… 15 V. ABB Semiconductors AG reserves the right to change specifications without notice. ABB Semiconductors AG Fabrikstrasse 2 CH-5600 Lenzburg, Switzerland Tel: Fax: E-mail Internet +41 (0)62 888 6419 +41 (0)62 888 6306 [email protected] www.abbsem.com Doc. No. 5SYA 1211-04 Aug. 2000