VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 5500 280 1.8 1.95 7.2 3300 V A kA V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 03D6004 mΩ Ω V Doc. No. 5SYA1225-03 Jan. 02 • Direct fiber optic control • Fast response (tdon < 3 µs, tdoff < 6 µs) • Precise timing (∆ ∆tdoff < 800 ns) • Patented free floating silicon technology • Optimized low On-state and switching losses • Very high EMI immunity • Cosmic radiation withstand rating Blocking VDRM Repetitive peak off-state voltage IDRM Repetitive peak off-state current VDClink Permanent DC voltage for 100 FIT failure rate Mechanical data 5500 V ≤ 20 mA 3300 V VGR ≥ 2V VD = VDRM 0 ≤ Tj ≤ 115 °C. Ambient cosmic radiation at sea level in open air. (see Fig. 9) min. 10 kN max. 14 kN VGR ≥ 2V Fm Mounting force Dp Pole-piece diameter 34 mm ±0.1 mm H Housing thickness 26 mm ±0.5 mm m Weight IGCT Ds Surface creepage distance ≥ 33 mm Da Air strike distance ≥ 13 mm l Length IGCT 202.5 mm +0/-0.5 mm h Height IGCT 46.5 mm ±1.0 mm w Width IGCT 200 mm +0/-0.5 mm 0.55 kg ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5SHX 03D6004 GCT Data On-state (see Fig. 1) ITAVM Max. average on-state current 110 A ITRMS Max. RMS on-state current 170 A ITSM Max. peak non-repetitive surge current I2t Limiting load integral VT On-state voltage VT0 Threshold voltage rT Slope resistance Half sine wave, TC = 85 °C 1.8 kA tp = 10 ms 3.6 kA tp = 1 ms 3 2 tp = 10 ms 3 2 6.6x10 A s tp = 1 ms 3.95 V IT = 280 A IT = 100 - 500 A 16.9x10 A s ≤ 1.95 V 7.2 mΩ Tj = 115 °C After surge: VD = VR = 0V Tj = 115 °C Turn-on switching di/dtcrit Max. rate of rise of on-state current tdon Turn-on delay time ≤ tr Rise time ≤ ton (min) Min, on-time Eon Turn-on energy per pulse f = 500 Hz Tj IT = 280 A VD = 3900 V 3 µs VD = 3300 V 1 µs IT = 280 A 10 µs RS = 5.2 Ω 90 A/µs ≤ 0.15 J CCL = 0.5 µF Tj = = di/dt = Li 115 °C 115 °C 75 A/µs = 44.5 µH LCL = 1 µH Turn-off switching (see Fig. 2, 3) ITGQM Max. controllable turn-off current 280 A tdoff Turn-off delay time ≤ tf Fall time ≤ toff (min) Min. off-time Eoff Turn-off energy per pulse ≤ VDM ≤ VDRM Tj = 115 °C 1 µH VD = 3300 V LCL ≤ 6 µs VD = 3300 V VDM ≤ 1 µs Tj = 10 µs ITGQ = 1.5 J CCL = VDRM Rs = 5.2 Ω Li = 44.5 µH 0.5 µF LCL ≤ 1 µH 115 °C ITGQM ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1225-03 Jan. 02 page 2 of 9 5SHX 03D6004 Diode Data On-state (see Fig. 4) IFAVM Max. average on-state current 65 A IFRMS Max. RMS on-state current 100 A IFSM Max. peak non-repetitive surge current 1.9 kA tp = 4.4 kA tp = 1 ms After surge: 2 18.2×10 A s tp = 10 ms VF = VR = 0V 2 9.6×103 A s tp = IF = 280 A IF = 100 - 500 A IF = 280 A VCL = 3900 V 3300 V 3 I2t Limiting load integral VF On-state voltage VF0 Threshold voltage 3.52 V rF Slope resistance 10.7 mΩ 6.5 ≤ V Half sine wave, TC = 85 °C 10 ms Tj = 115 °C 1 ms Tj = 115 °C Turn-off switching (see Fig. 5, 6) di/dtcrit Max. rate of rise of on-state current Irr Reverse recovery current ≤ 170 A VCL = Err Turn-off energy ≤ 0.8 J di/dt = 90 A/µs Tj = 115 °C IF = 280 A 75 A/µs Tj = 115 °C Rs = 5.2 Ω Li = 44.5 µH CCL = 0.5 µF LCL = 1 µH Gate Unit Power supply (see Fig. 9 to 11) VGDC Gate Unit voltage 20 ±0.5 VDC PGin Gate Unit power consumption ≤ 11 W Without galvanic isolation to power circuit. fS = 500 Hz, ITGQ AV = 115 A, δ = 0.9 X1 Gate Unit power connector WAGO, Part Number 231-532/001-000 Note 1 Optical control input/output (see Fig. 9 to 11) Pon CS Optical input power > -20 dBm Valid for 1mm plastic optical fibre Poff CS Optical noise power < -45 dBm (POF) tGLITCH Pulse width threshold ≤ 450 ns CS Receiver for command signal Max. pulse width without response Agilent, Type HFBR-2528 Note 2 Note 1: WAGO, www.wago.com Note 2: Agilent Technologies, www.semiconductor.agilent.com ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1225-03 Jan. 02 page 3 of 9 5SHX 03D6004 Thermal Tjop Operating junction temperature range 0…115 °C Tstg Storage temperature range -40…60 °C Tamb Ambient operational temperature range 0…60 °C Thermal resistance junction to case RthJC GCT Diode not dissipating ≤ 70 K/kW Double side cooled RthJC Diode GCT not dissipating ≤ 90 K/kW Thermal resistance case to heatsink RthCH GCT Diode not dissipating ≤ 16 K/kW Double side cooled RthCH Diode GCT not dissipating ≤ 16 K/kW ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1225-03 Jan. 02 page 4 of 9 5SHX 03D6004 GCT Part E off [J] 1.5 IT [A] Tj = 115 °C 600 Tj = 115°C 500 1.0 400 VD = 3300V 300 200 0.5 100 0 2.0 2.4 2.8 3.2 3.6 4.0 4.4 4.8 5.2 5.6 6.0 VT [V] Fig. 1 GCT on-state characteristics. 0.0 0 Fig. 2 100 200 300 ITGQ [A] GCT turn-off energy per pulse vs. turn-off current. ITGQ [A] 300 Tj = 0..115 °C V DM ≤ V DRM V RM ≤ V RRM Li = 44.5 µ H CCL = 0.5 µ F LCL = 1.0 µH 200 Rs = 5.2 Ω 100 0 0 1000 2000 3000 4000 5000 VD [V] Fig. 3 Max. repetitive GCT turn-off current. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1225-03 Jan. 02 page 5 of 9 5SHX 03D6004 Diode Part IF [A] Err [J] 600 0.9 Tj = 115°C Tj = 115°C diF/dt = 75 A/µs 0.8 VD = 3300 V 500 0.7 400 0.6 0.5 300 0.4 200 0.3 0.2 100 0.1 0 0.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 VF [V] Fig. 4 Diode on-state characteristics. 0 Fig. 5 100 200 300 IFQ [A] Diode turn-off energy per pulse vs. turn-off current. IFQ [A] Irr [A] 250 300 Tj = 115°C diF/dt = 75 A/µs VD = 3300 V Tj = 0 - 115°C diF/dt = 75 A/µs 200 VDM ≤ VDRM 200 150 100 100 50 0 0 0 Fig. 6 100 200 300 IFQ [A] Diode reverse recovery current vs. turn-off current. 0 Fig. 7 1000 2000 3000 4000 5000 VD [V] Max. repetitive diode forward current. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1225-03 Jan. 02 page 6 of 9 5SHX 03D6004 PGin [W] 20 fs = 1000 Hz fs = 500 Hz fs = 50 Hz 15 10 5 0 0 Fig. 8 20 40 60 80 100 120 ITGQ ave [A] Gate Unit power consumption. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1225-03 Jan. 02 page 7 of 9 5SHX 03D6004 Fig. 9 Device Outline Drawing. RC-IGCT Gate Unit X 1 Supply (20VDC) RC-GCT Internal Supply (without galvanic isolation to power circuit) TurnOn Circuit CS Fig. 10 Command Signal (Light) Rx Logic Monitoring TurnOff Circuit Anode Gate Cathode Block diagram. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1225-03 Jan. 02 page 8 of 9 5SHX 03D6004 1 Turn-on Turn-off di/dt ITM VD VDM VDSP VD IT IT 0.9 VD 0.8 ITGQ CS CS 0.05 VD 0.1 VD 0.3 ITGQ VG tdon tdoff VG tf tr Fig. 11 General current and voltage waveforms with IGCT-specific symbols. Li LCL DUT Rs VLC GCT - part CCL DUT Diode - part Fig. 12 LLoad Test circuit. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone +41 (0)58 586 1419 Fax +41 (0)58 586 1306 Email [email protected] Internet www.abbsem.com Doc. No. 5SYA1225-03 Jan. 02