ABB 5SHX03D6004

VDRM
ITGQM
ITSM
VT0
rT
VDClink
=
=
=
=
=
=
5500
280
1.8
1.95
7.2
3300
V
A
kA
V
Reverse Conducting Integrated
Gate-Commutated Thyristor
5SHX 03D6004
mΩ
Ω
V
Doc. No. 5SYA1225-03 Jan. 02
• Direct fiber optic control
• Fast response (tdon < 3 µs, tdoff < 6 µs)
• Precise timing (∆
∆tdoff < 800 ns)
• Patented free floating silicon technology
• Optimized low On-state and switching losses
• Very high EMI immunity
• Cosmic radiation withstand rating
Blocking
VDRM
Repetitive peak off-state voltage
IDRM
Repetitive peak off-state current
VDClink
Permanent DC voltage for 100
FIT failure rate
Mechanical data
5500 V
≤
20 mA
3300 V
VGR ≥ 2V
VD = VDRM
0 ≤ Tj ≤ 115 °C. Ambient cosmic
radiation at sea level in open air.
(see Fig. 9)
min.
10 kN
max.
14 kN
VGR ≥ 2V
Fm
Mounting force
Dp
Pole-piece diameter
34 mm
±0.1 mm
H
Housing thickness
26 mm
±0.5 mm
m
Weight IGCT
Ds
Surface creepage distance
≥
33 mm
Da
Air strike distance
≥
13 mm
l
Length IGCT
202.5 mm
+0/-0.5 mm
h
Height IGCT
46.5 mm
±1.0 mm
w
Width IGCT
200 mm
+0/-0.5 mm
0.55 kg
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
5SHX 03D6004
GCT Data
On-state (see Fig. 1)
ITAVM
Max. average on-state current
110 A
ITRMS
Max. RMS on-state current
170 A
ITSM
Max. peak non-repetitive
surge current
I2t
Limiting load integral
VT
On-state voltage
VT0
Threshold voltage
rT
Slope resistance
Half sine wave, TC = 85 °C
1.8 kA
tp
=
10 ms
3.6 kA
tp
=
1 ms
3
2
tp
=
10 ms
3
2
6.6x10 A s
tp
=
1 ms
3.95 V
IT
=
280 A
IT
=
100 - 500 A
16.9x10 A s
≤
1.95 V
7.2 mΩ
Tj = 115 °C
After surge:
VD = VR = 0V
Tj = 115 °C
Turn-on switching
di/dtcrit
Max. rate of rise of on-state
current
tdon
Turn-on delay time
≤
tr
Rise time
≤
ton (min)
Min, on-time
Eon
Turn-on energy per pulse
f
=
500 Hz
Tj
IT
=
280 A
VD = 3900 V
3 µs
VD
=
3300 V
1 µs
IT
=
280 A
10 µs
RS
=
5.2 Ω
90 A/µs
≤
0.15 J
CCL =
0.5 µF
Tj
=
=
di/dt =
Li
115 °C
115 °C
75 A/µs
=
44.5 µH
LCL =
1 µH
Turn-off switching (see Fig. 2, 3)
ITGQM
Max. controllable turn-off current
280 A
tdoff
Turn-off delay time
≤
tf
Fall time
≤
toff (min)
Min. off-time
Eoff
Turn-off energy per pulse
≤
VDM ≤ VDRM
Tj
=
115 °C
1 µH
VD
=
3300 V
LCL ≤
6 µs
VD
=
3300 V
VDM ≤
1 µs
Tj
=
10 µs
ITGQ =
1.5 J
CCL =
VDRM
Rs
=
5.2 Ω
Li
=
44.5 µH
0.5 µF LCL ≤
1 µH
115 °C
ITGQM
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1225-03 Jan. 02
page 2 of 9
5SHX 03D6004
Diode Data
On-state (see Fig. 4)
IFAVM
Max. average on-state current
65 A
IFRMS
Max. RMS on-state current
100 A
IFSM
Max. peak non-repetitive surge
current
1.9 kA
tp
=
4.4 kA
tp
=
1 ms After surge:
2
18.2×10 A s
tp
=
10 ms VF = VR = 0V
2
9.6×103 A s
tp
=
IF
=
280 A
IF
=
100 - 500 A
IF
=
280 A
VCL =
3900 V
3300 V
3
I2t
Limiting load integral
VF
On-state voltage
VF0
Threshold voltage
3.52 V
rF
Slope resistance
10.7 mΩ
6.5
≤
V
Half sine wave, TC = 85 °C
10 ms Tj =
115 °C
1 ms
Tj =
115 °C
Turn-off switching (see Fig. 5, 6)
di/dtcrit
Max. rate of rise of on-state
current
Irr
Reverse recovery current
≤
170 A
VCL =
Err
Turn-off energy
≤
0.8 J
di/dt =
90 A/µs
Tj =
115 °C
IF =
280 A
75 A/µs Tj =
115 °C
Rs =
5.2 Ω
Li =
44.5 µH
CCL =
0.5 µF
LCL =
1 µH
Gate Unit
Power supply (see Fig. 9 to 11)
VGDC
Gate Unit voltage
20 ±0.5 VDC
PGin
Gate Unit power consumption
≤
11 W
Without galvanic isolation to power
circuit.
fS = 500 Hz, ITGQ AV = 115 A, δ = 0.9
X1
Gate Unit power connector
WAGO, Part Number 231-532/001-000 Note 1
Optical control input/output (see Fig. 9 to 11)
Pon CS
Optical input power
>
-20 dBm Valid for 1mm plastic optical fibre
Poff CS
Optical noise power
<
-45 dBm (POF)
tGLITCH
Pulse width threshold
≤
450 ns
CS
Receiver for command signal
Max. pulse width without response
Agilent, Type HFBR-2528 Note 2
Note 1: WAGO, www.wago.com
Note 2: Agilent Technologies, www.semiconductor.agilent.com
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1225-03 Jan. 02
page 3 of 9
5SHX 03D6004
Thermal
Tjop
Operating junction temperature range
0…115
°C
Tstg
Storage temperature range
-40…60
°C
Tamb
Ambient operational temperature range
0…60
°C
Thermal resistance junction to case
RthJC GCT
Diode not dissipating
≤
70 K/kW Double side cooled
RthJC Diode
GCT not dissipating
≤
90 K/kW
Thermal resistance case to heatsink
RthCH GCT
Diode not dissipating
≤
16 K/kW Double side cooled
RthCH Diode
GCT not dissipating
≤
16 K/kW
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1225-03 Jan. 02
page 4 of 9
5SHX 03D6004
GCT Part
E off [J]
1.5
IT [A]
Tj = 115 °C
600
Tj = 115°C
500
1.0
400
VD = 3300V
300
200
0.5
100
0
2.0 2.4 2.8 3.2 3.6 4.0 4.4 4.8 5.2 5.6 6.0
VT [V]
Fig. 1
GCT on-state characteristics.
0.0
0
Fig. 2
100
200
300
ITGQ [A]
GCT turn-off energy per pulse vs.
turn-off current.
ITGQ [A]
300
Tj = 0..115 °C
V DM ≤ V DRM
V RM ≤ V RRM
Li = 44.5 µ H
CCL = 0.5 µ F
LCL = 1.0 µH
200
Rs = 5.2 Ω
100
0
0
1000
2000
3000
4000
5000
VD [V]
Fig. 3
Max. repetitive GCT turn-off current.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1225-03 Jan. 02
page 5 of 9
5SHX 03D6004
Diode Part
IF [A]
Err [J]
600
0.9
Tj = 115°C
Tj = 115°C
diF/dt = 75 A/µs
0.8
VD = 3300 V
500
0.7
400
0.6
0.5
300
0.4
200
0.3
0.2
100
0.1
0
0.0
3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5
VF [V]
Fig. 4
Diode on-state characteristics.
0
Fig. 5
100
200
300
IFQ [A]
Diode turn-off energy per pulse vs.
turn-off current.
IFQ [A]
Irr [A]
250
300
Tj = 115°C
diF/dt = 75 A/µs
VD = 3300 V
Tj = 0 - 115°C
diF/dt = 75 A/µs
200
VDM ≤ VDRM
200
150
100
100
50
0
0
0
Fig. 6
100
200
300
IFQ [A]
Diode reverse recovery current vs.
turn-off current.
0
Fig. 7
1000
2000
3000
4000
5000
VD [V]
Max. repetitive diode forward
current.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1225-03 Jan. 02
page 6 of 9
5SHX 03D6004
PGin [W]
20
fs = 1000 Hz
fs = 500 Hz
fs = 50 Hz
15
10
5
0
0
Fig. 8
20
40
60
80
100
120
ITGQ ave [A]
Gate Unit power consumption.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1225-03 Jan. 02
page 7 of 9
5SHX 03D6004
Fig. 9
Device Outline Drawing.
RC-IGCT
Gate Unit
X
1
Supply (20VDC)
RC-GCT
Internal Supply (without galvanic isolation to power circuit)
TurnOn
Circuit
CS
Fig. 10
Command Signal (Light)
Rx
Logic
Monitoring
TurnOff
Circuit
Anode
Gate
Cathode
Block diagram.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1225-03 Jan. 02
page 8 of 9
5SHX 03D6004
1
Turn-on
Turn-off
di/dt
ITM
VD
VDM
VDSP
VD
IT
IT
0.9 VD
0.8 ITGQ
CS
CS
0.05 VD
0.1 VD
0.3 ITGQ
VG
tdon
tdoff
VG
tf
tr
Fig. 11
General current and voltage waveforms with IGCT-specific symbols.
Li
LCL
DUT
Rs
VLC
GCT - part
CCL
DUT
Diode - part
Fig. 12
LLoad
Test circuit.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)58 586 1419
Fax
+41 (0)58 586 1306
Email
abbsem@ch.abb.com
Internet
www.abbsem.com
Doc. No. 5SYA1225-03 Jan. 02