ABB 5SHX26L4510

VDRM
ITGQM
ITSM
V(T0)
rT
VDC-link
=
=
=
=
=
=
4500
2200
17×103
1.8
0.533
2800
V
A
A
V
mΩ
V
Reverse Conducting Integrated
Gate-Commutated Thyristor
5SHX 26L4510
Doc. No. 5SYA1230-03 Aug 07
• High snubberless turn-off rating
• Optimized for medium frequency (<1 kHz) and
low turn-off losses
• High reliability
• High electromagnetic immunity
• Simple control interface with status feedback
• AC or DC supply voltage
• Contact factory for series connection
Blocking
Maximum rated values Note 1
Parameter
Repetitive peak off-state
voltage
Symbol Conditions
VDRM
Gate Unit energized
Permanent DC voltage for
100 FIT failure rate of
RC-GCT
VDC-link
min
typ
Ambient cosmic radiation at sea level
in open air. Gate Unit energized
max
Unit
4500
V
2800
V
max
Unit
50
mA
Characteristic values
Parameter
Repetitive peak off-state
current
Symbol Conditions
IDRM
VD = VDRM, Gate Unit energized
min
typ
Mechanical data (see Fig. 20, 21)
Maximum rated values Note 1
Symbol Conditions
Fm
min
typ
max
Unit
42
44
46
kN
Parameter
Pole-piece diameter
Symbol Conditions
Dp
± 0.1 mm
min
typ
max
Unit
Housing thickness
H
25.3
Weight
m
Surface creepage distance
Ds
Anode to Gate
33
mm
Air strike distance
Da
Anode to Gate
10
mm
Length
l
± 1.0 mm
439
mm
Height
h
± 1.0 mm
40
mm
Width IGCT
w
± 1.0 mm
173
mm
Parameter
Mounting force
Characteristic values
85
Note 1 Maximum rated values indicate limits beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
mm
25.8
mm
2.9
kg
5SHX 26L4510
GCT Data
On-state (see Fig. 3 to 6, 23)
Maximum rated values Note 1
Parameter
Max. average on-state
current
Symbol Conditions
IT(AV)M
Half sine wave, TC = 85 °C,
Max. RMS on-state current
IT(RMS)
min
typ
max
Unit
1010
A
Double side cooled
Max. peak non-repetitive
surge on-state current
ITSM
Limiting load integral
I2t
Max. peak non-repetitive
surge on-state current
ITSM
Limiting load integral
I2t
Critical rate of rise of onstate current
diT/dtcr
1590
A
3
tp = 10 ms, Tj = 125 °C, sine wave
after surge: VD = VR = 0 V
17×10
A
6
1.45×10
3
tp = 3 ms, Tj = 125 °C, sine wave
after surge: VD = VR = 0 V
25×10
3
For higher diT/dt and current lower
than 100 A an external retrigger
pulse is required.
A2s
A
938×10
A2s
100
A/µs
Characteristic values
Parameter
On-state voltage
Symbol Conditions
VT
IT = 2200 A, Tj = 125 °C
Threshold voltage
V(T0)
Slope resistance
rT
Turn-on switching
(see Fig. 23, 25)
min
typ
max
Unit
2.3
2.6
2.95
V
1.8
V
0.533
mΩ
max
Unit
650
A/µs
max
Unit
3.5
µs
7
µs
1
µs
0.85
J
max
Unit
2200
A
1100
A
max
Unit
7
µs
7
µs
12
J
Tj = 125 °C
IT = 400...3000 A
Maximum rated values Note 1
Symbol Conditions
diT/dtcr f = 0..500 Hz, Tj = 125 °C,
IT = 2200 A, VD = 2800 V
min
min
Rise time
Symbol Conditions
VD = 2800 V, Tj = 125 °C
tdon
IT = 2200 A, di/dt = VD / Li
tdon SF
Li = 5 µH
CCL = 10 µF, LCL = 0.3 µH
tr
Turn-on energy per pulse
Eon
Parameter
Critical rate of rise of onstate current
typ
Characteristic values
Parameter
Turn-on delay time
Turn-on delay time status
feedback
typ
Turn-off switching (see Fig. 7, 8, 23, 25)
Maximum rated values Note 1
Parameter
Max. controllable turn-off
current
Max. controllable turn-off
current
Symbol Conditions
ITGQM VDM ≤ VDRM, Tj = 125 °C,
VD = 2800 V, RS = 0.65 Ω,
CCL = 10 µF, LCL ≤ 0.3 µH
ITGQM
min
typ
VDM ≤ VDRM, Tj = 125 °C,
VD = 3200 V, RS = 0.65 Ω,
CCL = 10 µF, LCL ≤ 0.3 µH
Characteristic values
Parameter
Turn-off delay time
Turn-off delay time status
feedback
Turn-off energy per pulse
Symbol Conditions
VD = 2800 V, Tj = 125 °C
tdoff
VDM ≤ VDRM, RS = 0.65 Ω
tdoff SF
ITGQ = 2200 A, Li = 5 µH
CCL = 10 µF, LCL = 0.3 µH,
Eoff
min
typ
7.8
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1230-03 Aug 07
page 2 of 13
5SHX 26L4510
Diode Data
On-state (see Fig. 9 to 12, 24, 25)
Maximum rated values Note 1
Parameter
Max. average on-state
current
Symbol Conditions
IF(AV)M
Half sine wave, TC = 85 °C
Max. RMS on-state current
IF(RMS)
Max. peak non-repetitive
surge current
IFSM
Limiting load integral
I2t
Max. peak non-repetitive
surge current
IFSM
Limiting load integral
I2t
min
typ
tp = 10 ms, Tvj = 125°C, VR = 0 V
max
Unit
390
A
620
A
3
A
3
A2s
3
A
306.7×10
3
A2s
10.6×10
561.8×10
14.3×10
tp = 3 ms, Tvj = 125°C, VR = 0 V
Characteristic values
Parameter
On-state voltage
Symbol Conditions
VF
IF = 2200 A, Tvj = 125°C
Threshold voltage
V(F0)
Slope resistance
rF
min
typ
max
Unit
3.54
4.25
5.4
V
2.7
V
1.24
mΩ
max
Unit
80
V
250
V
max
Unit
650
A/µs
650
A/µs
max
Unit
900
A
2800
µC
4
J
Tvj = 125°C
IF = 400...3000 A
Turn-on (see Fig. 24, 25)
Characteristic values
Parameter
Peak forward recovery
voltage
Symbol Conditions
VFRM
dIF/dt = 650 A/µs, Tvj = 125°C
min
typ
dIF/dt = 3000 A/µs, Tvj = 125°C
Turn-off (see Fig. 13 to 17, 24, 25)
Maximum rated values Note 1
Parameter
Symbol Conditions
Max. decay rate of on-state di/dtcrit
IFM = 2200 A, Tvj = 125 °C
current
VDClink = 2800 V
Max. decay rate of on-state di/dtcrit
current
min
typ
IFM = 3200 A, Tvj = 125 °C
VDClink = 2800 V
Characteristic values
Parameter
Reverse recovery current
Reverse recovery charge
Turn-off energy
Symbol Conditions
IFM = 2200 A, VDC-Link = 2800 V
IRM
-dIF/dt = 650 A/µs, LCL = 300 nH
Qrr
CCL = 10 µF, RS = 0.8 Ω,
Err
Tvj = 125°C, DCL = 5SDF 10H4520
min
typ
2.7
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1230-03 Aug 07
page 3 of 13
5SHX 26L4510
Gate Unit Data
Power supply (see Fig. 18, 19)
Maximum rated values Note 1
Parameter
Gate Unit voltage
(Connector X1)
Min. current needed to power
up the Gate Unit
Symbol Conditions
VGIN,RMS AC square wave amplitude (15 kHz
- 100kHz) or DC voltage. No
galvanic isolation to power circuit.
IGIN Min Rectified average current
see application note 5SYA 2031
min
typ
28
max
Unit
40
V
2.1
A
Gate Unit power consumption PGIN Max
100
W
max
Unit
8
A
max
Unit
Characteristic values
Parameter
Internal current limitation
Symbol Conditions
IGIN Max Rectified average current limited by
the Gate Unit
min
typ
Optical control input/output 2) (see Fig. 23)
Maximum rated values Note 1
Parameter
Min. on-time
Min. off-time
Symbol Conditions
ton
min
toff
typ
40
µs
40
µs
Characteristic values
Parameter
Optical input power
Optical noise power
Optical output power
Symbol Conditions
Pon CS CS: Command signal
Poff CS SF: Status feedback
Valid for 1mm plastic optical fiber
P
on SF
typ
-15
-19
(POF)
Optical noise power
Poff SF
Pulse width threshold
tGLITCH Max. pulse width without response
External retrigger pulse width
min
tretrig
600
max
Unit
-1
dBm
-45
dBm
-1
dBm
-50
dBm
400
ns
1100
ns
2) Do not disconnect or connect fiber optic cables while light is on.
Connectors 2) (see Fig. 20 to 22)
Symbol Description
3)
X1
AMP: MTA-156, Part Number 641210-5
Parameter
Gate Unit power connector
LWL receiver for command signal
CS
Avago, Type HFBR-2528
4)
LWL transmitter for status feedback
SF
Avago, Type HFBR-1528
4)
2) Do not disconnect or connect fiber optic cables while light is on.
3) AMP, www.amp.com
4) Avago Technologies, www.avagotech.com
Visual feedback (see Fig. 22)
Parameter
Gate OFF
Symbol Description
LED1 "Light" when GCT is off
Color
(green)
Gate ON
LED2
"Light" when gate-current is flowing
(yellow)
Fault
LED3
"Light" when not ready / Failure
(red)
Power supply voltage OK
LED4
"Light" when power supply is within specified range
(green)
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1230-03 Aug 07
page 4 of 13
5SHX 26L4510
Thermal
Maximum rated values Note 1
Parameter
Junction operating temperature
Conditions
Symbol
Tvj
min
typ
max
Unit
0
125
°C
Storage temperature range
Tstg
-40
60
°C
Ambient operational temperature
Ta
0
50
°C
max
Unit
Double side cooled
12.6
K/kW
Characteristic values
Conditions
Parameter
Symbol
Thermal resistance junction-to-case
Rth(jc)
of GCT
min
typ
Thermal resistance case-toheatsink of GCT
Rth(ch)
No heat flow between GCT
and Diode part
4.2
K/kW
Thermal resistance junction-to-case
of Diode
Rth(jc)
Double side cooled
26
K/kW
Thermal resistance case-toheatsink of Diode
Rth(ch)
No heat flow between GCT
and Diode part
10.4
K/kW
Analytical function for transient thermal
impedance:
n
∑ R (1 - e
Z thJC (t) =
i
- t/ τ
i
)
i =1
GCT
i
1
2
3
4
Ri(K/kW)
8.769
1.909
1.218
0.699
τi(s)
0.5407
0.0792
0.0091
0.0025
i
1
2
3
4
Ri(K/kW)
17.057
5.007
2.498
1.439
τi(s)
0.5460
0.0829
0.0089
0.0023
Diode
Fig. 1 Transient thermal impedance (junction-tocase) vs. time (max. values)
Max. Turn-off current for Lifetime operation
•
calculated lifetime of on-board capacitors
20 years
•
with slightly forced air cooling (air velocity
> 0.5 m/s)
•
strong air cooling allows for increased
ambient temperature
Fig. 2 Max. turn-off current vs. frequency for lifetime
operation
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1230-03 Aug 07
page 5 of 13
5SHX 26L4510
GCT Part
Max. on-state characteristic model:
Max. on-state characteristic model:
VT25 = ATvj + BTvj ⋅ IT + CTvj ⋅ ln(IT + 1) + DTvj ⋅ IT
VT125 = ATvj + BTvj ⋅ IT + CTvj ⋅ ln(IT + 1) + DTvj ⋅ IT
Valid for iT = 300 – 15000 A
B25
C25
-6
-3
272.3×10
296.9×10
Valid for iT = 300 – 15000 A
A25
-3
-79.1×10
D25
0.0
A125
-3
-342.7×10
B125
-6
414.9×10
C125
-3
312.7×10
D125
0.0
Fig. 3 GCT on-state voltage characteristics
Fig. 4 GCT on-state voltage characteristics
Fig. 5 GCT surge on-state current vs. pulse length,
half-sine wave
Fig. 6 GCT surge on-state current vs. number of
pulses, half-sine wave, 10 ms, 50Hz
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1230-03 Aug 07
page 6 of 13
5SHX 26L4510
Fig. 7 GCT turn-off energy per pulse vs. turn-off
current
Fig. 8 GCT Safe Operating Area
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1230-03 Aug 07
page 7 of 13
5SHX 26L4510
Diode Part
Max. on-state characteristic model:
Max. on-state characteristic model:
VF25 = ATvj + BTvj ⋅ IT + CTvj ⋅ ln(IT + 1) + DTvj ⋅ IT
VF125 = ATvj + BTvj ⋅ IT + CTvj ⋅ ln(IT + 1) + DTvj ⋅ IT
Valid for IF = 300 – 15000 A
B25
C25
-6
-3
867.9×10
495.5×10
Valid for IT = 300 – 15000 A
A25
-3
-463.7×10
D25
0.0
A125
-1.2
B125
-3
1.0×10
C125
-3
555.4×10
D125
0.0
Fig. 9 Diode on-state voltage characteristics
Fig. 10 Diode on-state voltage characteristics
Fig. 11 Diode surge on-state current vs. pulse length,
half-sine wave
Fig. 12 Diode surge on-state current vs. number of
pulses, half-sine wave, 10 ms, 50Hz
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1230-03 Aug 07
page 8 of 13
5SHX 26L4510
Fig. 13 Upper scatter range of diode turn-off energy
per pulse vs. turn-off current
Fig. 14 Upper scatter range of diode turn-off energy
per pulse vs decay rate of on-state current
Fig. 15 Upper scatter range of diode reverse recovery
charge vs decay rate of on-state current
Fig. 16 Upper scatter range of diode reverse recovery
current vs decay rate of on-state current
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1230-03 Aug 07
page 9 of 13
5SHX 26L4510
Fig. 17 Diode Safe Operating Area
Fig. 18 Max. Gate Unit input power in chopper mode
Fig. 19 Burst capability of Gate Unit
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1230-03 Aug 07
page 10 of 13
5SHX 26L4510
Fig. 20 Outline drawing; all dimensions are in millimeters and represent nominal values unless stated otherwise
1) VGIN (AC or DC+)
2) VGIN (AC or DC+)
3) Cathode
4) VGIN (AC or DC-)
5) VGIN (AC or DC-)
Fig. 21 Detail A: pin out of supply connector X1.
RC-IGCT
Gate Unit
X1
RC-GCT
Anode
Supply (VGIN)
Internal Supply (No galvanic isolation to power circuit)
LED1
LED2
LED3
LED4
CS
SF
TurnOn
Circuit
Command Signal (Light)
Status Feedback (Light)
Rx
Tx
Logic
Monitoring
TurnOff
Circuit
Gate
Cathode
Fig. 22 Block diagram
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1230-03 Aug 07
page 11 of 13
5SHX 26L4510
Turn-off
External
Retrigger pulse
Turn-on
dIT/dt
VDM
ITM
VDSP
VD
VD
IT
0.9 VD
IT
0.4 ITGQ
0.1 VD
VD
CS
CS
CS
SF
SF
SF
tretrig
tdon SF
tdoff SF
tdoff
tdon
tr
ton
toff
Fig. 23 General current and voltage waveforms with IGCT-specific symbols
VF(t), IF (t)
dIF/dt
VFR
-dIF/dt
IF (t)
IF (t)
VF (t)
VF (t)
Qrr
t
tfr
tfr (typ)
10 µs
IRM
VR (t)
Fig. 24 General current and voltage waveforms with Diode-specific symbols
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1230-03 Aug 07
page 12 of 13
5SHX 26L4510
Li
Rs
VDC
LCL
DUT
DCL
GCT - part
CCL
DUT
Diode - part
LLoad
Fig. 25 Test circuit
Related documents:
5SYA 2031
5SYA 2032
5SYA 2036
5SYA 2046
5SYA 2048
5SYA 2051
5SZK 9107
Applying IGCT Gate Units
Applying IGCTs
Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors
Failure rates of IGCTs due to cosmic rays
Field measurements on High Power Press Pack Semiconductors
Voltage ratings of high power semiconductors
Specification of enviromental class for pressure contact IGCTs, OPERATION available on request, please contact factory
Please refer to http://www.abb.com/semiconductors for current version of documents.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone
Fax
Email
Internet
+41 (0)58 586 1419
+41 (0)58 586 1306
abbsem@ch.abb.com
www.abb.com/semiconductors
Doc. No. 5SYA1230-03 Aug 07