ABB 5SHY42L6530

VDRM
ITGQM
ITSM
V(T0)
rT
VDC-link
=
=
=
=
=
=
6500
4200
26×103
2.0
0.54
4000
V
A
A
V
mΩ
V
Asymmetric Integrated GateCommutated Thyristor
5SHY 42L6530
PRELIMINARY
Doc. No. 5SYA1246-00 Aug. 07
• High snubberless turn-off rating
• Wide temperature range
• High electromagnetic immunity
• Simple control interface with status feedback
• AC or DC supply voltage
• Option for series connection (contact factory)
Blocking
Maximum rated values
1)
Parameter
Symbol Conditions
Rep. peak off-state voltage VDRM
Gate Unit energized, Note 1
Permanent DC voltage for VDC-link
100 FIT failure rate of GCT
Reverse voltage
min
typ
Ambient cosmic radiation at sea level
in open air. Gate Unit energized
VRRM
max
Unit
6500
V
4000
V
17
V
max
Unit
50
mA
Characteristic values
Parameter
Symbol Conditions
Rep. peak off-state current IDRM
VD = VDRM, Gate Unit energized
min
typ
Note 1: Voltage de-rating factor of 0.11% per °C is applicable for Tvj below -25 °C
Mechanical data
(see Fig. 11, 12)
1)
Maximum rated values
Symbol Conditions
Fm
min
typ
max
Unit
36
40
44
kN
Parameter
Pole-piece diameter
Symbol Conditions
Dp
± 0.1 mm
min
typ
max
Unit
Housing thickness
H
25.3
Weight
m
Surface creepage distance
Ds
Anode to Gate
33
mm
Air strike distance
Da
Anode to Gate
10
mm
Length
l
± 1.0 mm
439
mm
Height
h
± 1.0 mm
40
mm
Width IGCT
w
± 1.0 mm
1) Maximum rated values indicate limits beyond which damage to the device may occur
173
mm
Parameter
Mounting force
Characteristic values
85
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
mm
25.8
mm
2.9
kg
5SHY 42L6530
GCT Data
On-state (see Fig.1)3, 4, 5, 6, 14, 15)
Maximum rated values
Parameter
Max. average on-state
current
Symbol Conditions
IT(AV)M
Half sine wave, TC = 85 °C,
Max. RMS on-state current
IT(RMS)
min
typ
max
Unit
1270
A
Double side cooled
Max. peak non-repetitive
surge on-state current
ITSM
Limiting load integral
I2t
Max. peak non-repetitive
surge on-state current
ITSM
Limiting load integral
I2t
Max. peak non-repetitive
surge on-state current
ITSM
Limiting load integral
I2t
Stray inductance between
GCT and antiparallel diode
LD
Critical rate of rise of onstate current
diT/dtcr
2000
tp = 3 ms, Tj = 125 °C, sine wave
after surge: VD = VR = 0 V
A
3
A
6
A2s
3
A
40×10
2.4×10
26×10
tp = 10 ms, Tj = 125 °C, sine wave
after surge: VD = VR = 0 V
6
3.38×10
3
tp = 30 ms, Tj = 125 °C, sine wave
after surge: VD = VR = 0 V
17×10
A2s
A
6
4.34×10
A2s
Only relevant for applications with
antiparallel diode to the IGCT
300
nH
For higher diT/dt and current lower
than 100 A an external retrigger puls
is required.
200
A/µs
typ
max
Unit
3.8
4.1
V
1.9
2.0
V
0.48
0.54
mΩ
typ
max
Unit
1000
A/µs
max
Unit
4
µs
7
µs
1
µs
2.5
J
max
Unit
4200
A
3900
A
max
Unit
8
µs
7
µs
tbd
J
Characteristic values
Parameter
On-state voltage
Symbol Conditions
VT
IT = 4000 A, Tj = 125 °C
min
Threshold voltage
V(T0)
Slope resistance
rT
Turn-on switching
1)
(see Fig. 14, 15)
Parameter
Critical rate of rise of onstate current
Symbol Conditions
diT/dtcr f = 0..500 Hz,Tj = 125 °C,IT = 3900 A
VD = 4000 V, ITM ≤ 5500 A
min
min
Rise time
Symbol Conditions
tdon
VD = 4000 V, Tj = 125 °C
IT = 4000 A, di/dt = VD / Li
tdon SF
Li = 4 µH
CCL = 20 µF, LCL = 0.3 µH
tr
Turn-on energy per pulse
Eon
Tj = 125 °C
IT = 1000...5000 A
Maximum rated values
Characteristic values
Parameter
Turn-on delay time
Turn-on delay time status
feedback
typ
Turn-off switching
(see Fig. 7, 8, 10, 14, 15)
1)
Maximum rated values
Parameter
Max. controllable turn-off
current
Max. controllable turn-off
current
Symbol Conditions
ITGQM1 VDM ≤ VDRM,
Tj = 125°C,
ITGQM2 RS = 0.35 Ω,
CCL = 20 µF,
LCL ≤ 0.3 µH
min
typ
VD = 4000 V
ton > 100µs
VD = 4000 V
40µs < ton < 100µs
Characteristic values
Parameter
Turn-off delay time
Turn-off delay time status
feedback
Turn-off energy per pulse
Symbol Conditions
tdoff
VD = 4000 V, Tj = 125 °C
tdoff SF VDM ≤ VDRM, RS = 0.35 Ω
ITGQ = 4000 A, Li = 4 µH
CCL = 20 µF, LCL = 0.3 µH
Eoff
min
typ
44
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1246-00 Aug. 07
page 2 of 9
5SHY 42L6530
Gate Unit Data
Power supply (see
Fig. 2, 9, 10, 12, 13)
1)
Maximum rated values
Parameter
Gate Unit voltage
(Connector X1)
Min. current needed to power
up the Gate Unit
Symbol Conditions
VGIN,RMS AC square wave amplitude (15 kHz
- 100kHz) or DC voltage. No
galvanic isolation to power circuit.
IGIN Min Rectified average current
see application note 5SYA 2031
min
typ
28
max
Unit
40
V
2
A
Gate Unit power consumption PGIN Max
130
W
max
Unit
8
A
max
Unit
Characteristic values
Parameter
Internal current limitation
Symbol Conditions
IGIN Max Rectified average current limited by
the Gate Unit
min
typ
Optical control1)input/output 2)
Maximum rated values
Parameter
Min. on-time
Min. off-time
Symbol Conditions
ton
min
toff
typ
40
µs
40
µs
Characteristic values
Parameter
Optical input power
Optical noise power
Optical output power
Symbol Conditions
Pon CS CS: Command signal
Poff CS SF: Status feedback
Valid for 1mm plastic optical fiber
P
on SF
typ
-15
-19
(POF)
Optical noise power
Poff SF
Pulse width threshold
tGLITCH Max. pulse width without response
External retrigger pulse width
min
tretrig
600
max
Unit
-1
dBm
-45
dBm
-1
dBm
-50
dBm
400
ns
1100
ns
2) Do not disconnect or connect fiber optic cables while light is on.
Connectors 2) (see Fig. 11, 12, 13)
Symbol Description
3)
X1
AMP: MTA-156, Part Number 641210-5
Parameter
Gate Unit power connector
LWL receiver for command signal
CS
Avago, Type HFBR-2528
4)
LWL transmitter for status feedback
SF
Avago, Type HFBR-1528
4)
2) Do not disconnect or connect fiber optic cables while light is on.
3) AMP, www.amp.com
4) Avago Technologies, www.avagotech.com
Visual feedback (see Fig. 13)
Parameter
Gate OFF
Symbol Description
LED1 "Light" when GCT is off
Color
(green)
Gate ON
LED2
"Light" when gate-current is flowing
(yellow)
Fault
LED3
"Light" when not ready / Failure
(red)
Power supply voltage OK
LED4
"Light" when power supply is within specified range
(green)
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1246-00 Aug. 07
page 3 of 9
5SHY 42L6530
Thermal
Maximum rated values
1)
Parameter
Junction operating temperature
Symbol
Tvj
Conditions
min
typ
max
Unit
-40
125
°C
Storage temperature range
Tstg
0
60
°C
Ambient operational temperature
Ta
-40
50
°C
max
Unit
8.5
K/kW
3
K/kW
Characteristic values
Parameter
Symbol
Thermal resistance junction-to-case
Rth(j-c)
of GCT
Thermal resistance case-toheatsink of GCT
Rth(c-h)
Conditions
min
typ
Double side cooled
Double side cooled
Analytical function for transient thermal
impedance:
n
Z th(j-c) (t) = ∑ Ri(1 - e-t/τ i )
i=1
i
1
2
3
4
Ri(K/kW)
5.562
1.527
0.868
0.545
τi(s)
0.5119
0.0896
0.0091
0.0024
Fig. 1 Transient thermal impedance (junction-tocase) vs. time (max. values)
Max. Turn-off current for Lifetime operation
•
calculated lifetime of on-board capacitors
20 years
•
with slightly forced air cooling (air velocity
> 0.5 m/s)
•
strong air cooling allows for increased
ambient temperature
Fig. 2 Max. turn-off current vs. frequency for lifetime
operation
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1246-00 Aug. 07
page 4 of 9
5SHY 42L6530
Max. on-state characteristic model:
Max. on-state characteristic model:
VT25 = ATvj + BTvj ⋅ IT + CTvj ⋅ ln(IT + 1) + DTvj ⋅ IT
VT125 = ATvj + BTvj ⋅ IT + CTvj ⋅ ln(IT + 1) + DTvj ⋅ IT
Valid for iT = 300 – 30000 A
B25
C25
Valid for iT = 300 – 30000 A
A25
D25
A125
B125
C125
D125
Max.
-220.9×10-3
279.5×10-6
322.7×10-3
-483.3×10-18
Max.
-281.3×10-3
394.6×10-6
338.2×10-3
822.5×10-18
Typ.
-204.8×10-3
259.1×10-6
299.1×10-3
407.0×10-18
Typ.
-260.7×10-3
365.8×10-6
313.4×10-3
500.3×10-18
Fig. 3 GCT on-state voltage characteristics
Fig. 4 GCT on-state voltage characteristics
Fig. 5 Surge on-state current vs. pulse length, halfsine wave
Fig. 6 Surge on-state current vs. number of pulses,
half-sine wave, 10 ms, 50 Hz
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1246-00 Aug. 07
page 5 of 9
5SHY 42L6530
Fig. 7 GCT turn-off energy per pulse vs. turn-off
current
Fig. 8 Safe Operating Area
Fig. 9 Max. Gate Unit input power in chopper mode
Fig. 10 Burst capability of Gate Unit
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1246-00 Aug. 07
page 6 of 9
5SHY 42L6530
Fig. 11 Outline drawing; all dimensions are in millimeters and represent nominal values unless stated otherwise
1) VGIN (AC or DC+)
2) VGIN (AC or DC+)
3) Cathode
4) VGIN (AC or DC-)
5) VGIN (AC or DC-)
Fig. 12 Detail A: pin out of supply connector X1
AS-IGCT
Gate Unit
X1
AS-GCT
Supply (VGIN)
Internal Supply (No galvanic isolation to power circuit)
LED1
LED2
LED3
LED4
CS
SF
TurnOn
Circuit
Command Signal (Light)
Status Feedback (Light)
Rx
Tx
Logic
Monitoring
TurnOff
Circuit
Anode
Gate
Cathode
Fig. 13 Block diagram
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1246-00 Aug. 07
page 7 of 9
5SHY 42L6530
Turn-off
External
Retrigger pulse
Turn-on
dIT/dt
VDM
ITM
VDSP
VD
VD
IT
0.9 VD
IT
0.4 ITGQ
0.1 VD
VD
CS
CS
CS
SF
SF
SF
tretrig
tdon SF
tdoff SF
tdoff
tdon
tr
ton
toff
Fig. 14 General current and voltage waveforms with IGCT - specific symbols
Li
LCL
DUT
Rs
VDC
LD
CCL
LLoad
Fig. 15 Test circuit
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1246-00 Aug. 07
page 8 of 9
5SHY 42L6530
Related documents:
5SYA 2031
5SYA 2032
5SYA 2036
5SYA 2046
5SYA 2048
5SYA 2051
5SZK 9107
Applying IGCT Gate Units
Applying IGCTs
Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors
Failure rates of IGCTs due to cosmic rays
Field measurements on High Power Press Pack Semiconductors
Voltage ratings of high power semiconductors
Specification of enviromental class for pressure contact IGCTs, OPERATION available on request, please contact factory
Please refer to http://www.abb.com/semiconductors for current version of documents.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone
Fax
Email
Internet
+41 (0)58 586 1419
+41 (0)58 586 1306
abbsem@ch.abb.com
www.abb.com/semiconductors
Doc. No. 5SYA1246-00 Aug. 07