VRRM = IF = 6500 V 50 A Fast-Diode Die 5SLX 12M6500 Die size: 13.6 x 13.6 mm Doc. No. 5SYA1666-01 July 07 • • • • Fast and soft reverse recovery Low losses Large SOA Passivation: SIPOS and Silicon Nitride plus Polyimide Maximum rated values 1) Parameter Repetitive peak reverse voltage Continuous forward current VRRM Tvj ≥ 25 °C IFRM Junction temperature min max Unit 6500 V 50 A 100 A -40 125 °C typ max Unit Limited by Tvjmax Tvj Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 2 Diode characteristic values Parameter 2) Symbol Conditions Continuous forward voltage VF IF = 50 A Continuous reverse current IR VR = 6500 V Peak reverse recovery current Irr Recovered charge Qrr Reverse recovery time trr Reverse recovery energy 2) Conditions IF Repetitive peak forward current 1) Symbol Erec IF = 50 A, VR = 3600 V, di/dt = 230 A/µs, Lσ = 3400 nH, Inductive load, Switch: 2x 5SMX12M6500 min Tvj = 25 °C 3.2 V Tvj = 125 °C 3.4 V Tvj = 25 °C 20 µA Tvj = 125 °C 3 Tvj = 25 °C 70 A Tvj = 125 °C 80 A Tvj = 25 °C 65 µC Tvj = 125 °C 100 µC Tvj = 25 °C 1700 ns Tvj = 125 °C 2250 ns Tvj = 25 °C 100 mJ Tvj = 125 °C 180 mJ Characteristic values according to IEC 60747 - 2 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 6 mA 5SLX 12M6500 100 250 VCC = 3600 V di/dt = 230 A/µs Tvj = 125 °C Lσ = 3.4 µH 90 80 200 125 °C 25 °C Erec [mJ], Q rr [µC], Irr [A] 70 IF [A] 60 50 40 30 Erec 150 Qrr 100 Irr 20 50 10 E rec [mJ] = -1.78 x 10 -2 x I F 2 + 3.8 x I F + 34 0 0 0 1 2 3 4 5 0 10 20 30 40 VF [V] Fig. 1 Typical diode forward characteristics 60 Fig. 2 -500 -1500 -20 -2000 -40 -2500 -60 VF [V] IF [A] IR -3000 VR -100 2000 4000 6000 Erec Qrr 100 Irr 50 0 8000 0 time [ns] Fig. 3 90 100 -3500 -4000 0 80 150 -1000 0 -80 70 Typical reverse recovery characteristics vs. forward current VCC = 3600 V IF = 50 A Tvj = 125 °C Lσ = 3.4 µH Erec [mJ], Q rr [µC], Irr [A] 20 60 200 0 VR = 3600 V IF = 50 A di/dt = 230 A/µs Tvj = 125 °C Lσ = 3.4 µH 40 50 IF [A] Typical diode reverse recovery behaviour 50 100 150 200 250 di/dt [A/µs] Fig. 4 Typical reverse recovery vs. di/dt ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1666-01 July 07 page 2 of 3 5SLX 12M6500 Mechanical properties Parameter Unit Dimensions Overall die L x W 13.6 x 13.6 mm exposed LxW front metal 8.58 x 8.58 mm 670 ± 20 µm 4 µm 1.2 µm thickness Metallization 3) 3) front (A) AlSi1 back (K) Al / Ti / Ni /Ag For assembly instructions refer to: IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors, Doc. No. 5SYA 2033. 8.58 13.56±0.05 Outline Drawing A (Anode) 8.58 13.56±0.05 Note : All dimensions are shown in mm This product has been designed and qualified for Industrial Level. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 [email protected] www.abb.com/semiconductors Doc. No. 5SYA1666-01 July 07