ABB 5SLX12M6500

VRRM =
IF
=
6500 V
50 A
Fast-Diode Die
5SLX 12M6500
Die size: 13.6 x 13.6 mm
Doc. No. 5SYA1666-01 July 07
•
•
•
•
Fast and soft reverse recovery
Low losses
Large SOA
Passivation: SIPOS and Silicon Nitride plus Polyimide
Maximum rated values
1)
Parameter
Repetitive peak reverse voltage
Continuous forward current
VRRM
Tvj ≥ 25 °C
IFRM
Junction temperature
min
max
Unit
6500
V
50
A
100
A
-40
125
°C
typ
max
Unit
Limited by Tvjmax
Tvj
Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 2
Diode characteristic values
Parameter
2)
Symbol
Conditions
Continuous forward voltage
VF
IF = 50 A
Continuous reverse current
IR
VR = 6500 V
Peak reverse recovery current
Irr
Recovered charge
Qrr
Reverse recovery time
trr
Reverse recovery energy
2)
Conditions
IF
Repetitive peak forward current
1)
Symbol
Erec
IF = 50 A,
VR = 3600 V,
di/dt = 230 A/µs,
Lσ = 3400 nH,
Inductive load,
Switch:
2x 5SMX12M6500
min
Tvj = 25 °C
3.2
V
Tvj = 125 °C
3.4
V
Tvj = 25 °C
20
µA
Tvj = 125 °C
3
Tvj = 25 °C
70
A
Tvj = 125 °C
80
A
Tvj = 25 °C
65
µC
Tvj = 125 °C
100
µC
Tvj = 25 °C
1700
ns
Tvj = 125 °C
2250
ns
Tvj = 25 °C
100
mJ
Tvj = 125 °C
180
mJ
Characteristic values according to IEC 60747 - 2
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
6
mA
5SLX 12M6500
100
250
VCC = 3600 V
di/dt = 230 A/µs
Tvj = 125 °C
Lσ = 3.4 µH
90
80
200
125 °C
25 °C
Erec [mJ], Q rr [µC], Irr [A]
70
IF [A]
60
50
40
30
Erec
150
Qrr
100
Irr
20
50
10
E rec [mJ] = -1.78 x 10 -2 x I F 2 + 3.8 x I F + 34
0
0
0
1
2
3
4
5
0
10
20
30
40
VF [V]
Fig. 1
Typical diode forward characteristics
60
Fig. 2
-500
-1500
-20
-2000
-40
-2500
-60
VF [V]
IF [A]
IR
-3000
VR
-100
2000
4000
6000
Erec
Qrr
100
Irr
50
0
8000
0
time [ns]
Fig. 3
90 100
-3500
-4000
0
80
150
-1000
0
-80
70
Typical reverse recovery characteristics
vs. forward current
VCC = 3600 V
IF = 50 A
Tvj = 125 °C
Lσ = 3.4 µH
Erec [mJ], Q rr [µC], Irr [A]
20
60
200
0
VR = 3600 V
IF = 50 A
di/dt = 230 A/µs
Tvj = 125 °C
Lσ = 3.4 µH
40
50
IF [A]
Typical diode reverse recovery behaviour
50
100
150
200
250
di/dt [A/µs]
Fig. 4
Typical reverse recovery vs. di/dt
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1666-01 July 07
page 2 of 3
5SLX 12M6500
Mechanical properties
Parameter
Unit
Dimensions
Overall die L x W
13.6 x 13.6
mm
exposed
LxW
front metal
8.58 x 8.58
mm
670 ± 20
µm
4
µm
1.2
µm
thickness
Metallization
3)
3)
front (A)
AlSi1
back (K)
Al / Ti / Ni /Ag
For assembly instructions refer to: IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors, Doc. No. 5SYA 2033.
8.58
13.56±0.05
Outline Drawing
A (Anode)
8.58
13.56±0.05
Note : All dimensions are shown in mm
This product has been designed and qualified for Industrial Level.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone
Fax
Email
Internet
+41 (0)58 586 1419
+41 (0)58 586 1306
abbsem@ch.abb.com
www.abb.com/semiconductors
Doc. No. 5SYA1666-01 July 07