VCE IC = = 1200 V 25 A IGBT-Die 5SMX 12E1273 Die size: 6.6 x 6.5 mm Doc. No. 5SYA 1632-00 June 05 • • • • • Low loss, rugged SPT technology Smooth switching for good EMC Minimized gate charge, short delay times Optimized for paralleling Large bondable emitter area Maximum rated values Parameter Collector-emitter voltage Symbol Conditions VCES DC collector current IC Peak collector current ICM Gate-emitter voltage 1) 1) VGE = 0 V, Tvj ≥ 25 °C Limited by Tvjmax VGES IGBT short circuit SOA tpsc Junction temperature Tvj min -20 VCC = 900 V, VCEM ≤ 1200 V VGE ≤ 15 V, Tvj ≤ 125 °C Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 9 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. -40 max Unit 1200 V 25 A 50 A 20 V 10 µs 150 °C 5SMX 12E1273 IGBT characteristic values 2) Parameter Symbol Conditions min Collector (-emitter) breakdown voltage V(BR)CES 1200 Collector-emitter saturation voltage VCE sat IC = 25 A, VGE = 15 V Tvj = 25 °C VCE = 1200 V, VGE = 0 V Gate leakage current IGES VCE = 0 V, VGE = ±20 V, Tvj = 125 °C Gate charge Qge Input capacitance Cies 2.0 100 4.5 6.5 V IC = 25 A, VCE = 600 V, VGE = -15 ..15 V 195 Internal gate resistance RGint 10 Turn-on delay time td(on) Turn-on switching energy Turn-off switching energy Short circuit current tf Eon Eoff ISC nC 2.01 VCE = 25 V, VGE = 0 V, f = 1 MHz, Tvj = 25 °C 0.08 Fall time µA nA Cres td(off) µA 200 Reverse transfer capacitance Turn-off delay time V -200 Coes tr Unit V 100 Output capacitance Rise time 2.3 2.2 Tvj = 125 °C IC = 1 mA, VCE = VGE, Tvj = 25 °C max V Tvj = 25 °C ICES VGE(TO) 1.7 Tvj = 125 °C Collector cut-off current Gate-emitter threshold voltage 2) VGE = 0 V, IC = 1 mA, Tvj = 25 °C typ 0.14 VCC = 600 V, IC = 25 A, RG = 33 Ω, VGE = ±15 V, Lσ = 120 nH, inductive load Tvj = 25 °C 95 Tvj = 125 °C 100 Tvj = 25 °C 70 Tvj = 125 °C 70 VCC = 600 V, IC = 25 A, RG = 47 Ω, VGE = ±15 V, Lσ = 120 nH, inductive load Tvj = 25 °C 295 Tvj = 125 °C 355 Tvj = 25 °C 65 Tvj = 125 °C 95 Tvj = 25 °C 2.1 VCC = 600 V, IC = 25 A, VGE = ±15 V, RG = 33 Ω, Lσ = 120 nH, inductive load, FWD: ½ 5SLX12E1200 VCC = 600 V, IC = 25 A, VGE = ±15 V, RG = 47 Ω, Lσ = 120 nH, inductive load nF Ω ns ns ns ns mJ Tvj = 125 °C 3.2 Tvj = 25 °C 1.4 mJ Tvj = 125 °C tpsc ≤ 10 μs, VGE = 15 V, Tvj = 125 °C, VCC = 900 V, VCEM ≤ 1200 V 2.3 140 A Characteristic values according to IEC 60747 - 9 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1632-00 June 05 page 2 of 5 5SMX 12E1273 Mechanical properties Parameter Unit Dimensions Overall die L x W 6.6 x 6.5 mm exposed L x W (except gate pad) front metal 5.1 x 5.0 mm 1.2 x 1.2 mm 130 ± 20 µm 4 µm 1.8 µm gate pad LxW thickness Metallization 3) 3) front (E) AlSi1 back (C) Al / Ti / Ni / Ag For assembly instructions refer to : IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors, Doc. No. 5SYA 2033. Outline drawing Emitter G Note: all dimensions are shown in mm This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, Chap. IX. This product has been designed and qualified for Industrial Level. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1632-00 June 05 page 3 of 5 5SMX 12E1273 50 50 VCE = 20V 25 °C 40 40 125 °C 30 IC [A] IC [A] 30 20 20 125 °C 10 10 25 °C VGE = 15V 0 0 0 1 2 3 4 0 1 2 3 4 Typical on-state characteristics Fig. 2 22 7 8 9 10 11 12 Typical transfer characteristics 14 VCC = 600 V RGon = 33 ohm RGoff = 47 ohm VGE = ±15 V Tvj = 125 °C Lσ = 120 nH 20 18 16 VCC = 600 V IC = 25 A VGE = ±15 V Tvj = 125 °C Lσ = 120 nH 13 12 11 10 9 Eon, E off [mJ] 14 Eon, E off [mJ] 6 VGE [V] VCE [V] Fig. 1 5 12 10 Eon 8 Eon 8 7 6 5 4 6 3 Eoff 4 2 Eoff 2 1 0 0 0 10 20 30 40 50 60 70 0 80 Typical switching characteristics vs collector current 100 150 200 250 300 RG [ohm] IC [A] Fig. 3 50 Fig. 4 Typical switching characteristics vs gate resistor ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1632-00 June 05 page 4 of 5 5SMX 12E1273 20 10 VGE = 0 V fOSC = 1 MHz VOSC = 50 mV Cies VCC = 600 V 15 1 C [nF] VGE [V] VCC = 800 V 10 Coes 0.1 Cres 5 IC = 25 A Tvj = 25 °C 0 0.01 0.00 Fig. 5 0.05 0.10 Qg [µC] 0.15 Typical gate charge characteristics 0.20 0 Fig. 6 5 10 15 20 VCE [V] 25 30 35 Typical capacitances vs collector-emitter voltage ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 [email protected] www.abb.com/semiconductors Doc. No. 5SYA 1632-00 June 05