VCE IC = = 6500 V 400 A ABB HiPakTM IGBT Module 5SNA 0400J650100 Doc. No. 5SYA 1592-01 Jun 07 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • High insulation package • AlSiC base-plate for high power cycling capability • AlN substrate for low thermal resistance Maximum rated values 1) Parameter Symbol Collector-emitter voltage max Unit VGE = 0 V, Tvj ≥ 25 °C 6500 V IC Tc = 85 °C 400 A Peak collector current ICM tp = 1 ms, Tc = 85 °C 800 A 20 V 7350 W IF 400 A Peak forward current IFRM 800 A Surge current IFSM 4000 A 10 µs 10200 V 125 °C Total power dissipation DC forward current VGES Ptot -20 Tc = 25 °C, per switch (IGBT) VR = 0 V, Tvj = 125 °C, tp = 10 ms, half-sinewave IGBT short circuit SOA tpsc VCC = 4400 V, VCEM CHIP ≤ 6500 V VGE ≤ 15 V, Tvj ≤ 125 °C Isolation voltage Visol 1 min, f = 50 Hz Junction temperature Tvj Junction operating temperature Tvj(op) -40 125 °C Case temperature Tc -40 125 °C Storage temperature Tstg -40 125 °C Mounting torques 2) min DC collector current Gate-emitter voltage 1) VCES Conditions 2) Ms Base-heatsink, M6 screws 4 6 Mt1 Main terminals, M8 screws 8 10 Mt2 Auxiliary terminals, M4 screws 2 3 Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 For detailed mounting instructions refer to ABB Document No. 5SYA2039 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Nm 5SNA 0400J650100 IGBT characteristic values 3) Parameter Symbol Conditions min Collector (-emitter) breakdown voltage V(BR)CES VGE = 0 V, IC = 10 mA, Tvj = 25 °C 6500 Collector-emitter 4) saturation voltage VCE sat IC = 400 A, VGE = 15 V V Tvj = 125 °C 5.4 5.9 V 8 mA 80 mA 500 nA 8 V Tvj = 25 °C Gate leakage current IGES VCE = 0 V, VGE = ±20 V, Tvj = 125 °C -500 VGE(TO) IC = 160 mA, VCE = VGE, Tvj = 25 °C 6 Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Turn-on delay time td(on) Rise time Turn-off delay time Fall time Turn-on switching energy Turn-off switching energy Short circuit current tr td(off) tf Eon Eoff ISC Module stray inductance Lσ CE Resistance, terminal-chip RCC’+EE’ 3) 4) V 4.8 VCE = 6500 V, VGE = 0 V Qge Unit 4.2 ICES Gate charge max Tvj = 25 °C Collector cut-off current Gate-emitter threshold voltage typ Tvj = 125 °C 35 IC = 400 A, VCE = 3600 V, VGE = -15 V .. 15 V 7.4 5.3 µC 95.3 VCE = 25 V, VGE = 0 V, f = 1 MHz, Tvj = 25 °C 4.41 nF 0.85 VCC = 3600 V, IC = 400 A, RG = 5.6 Ω, VGE = ±15 V, Lσ = 280 nH, inductive load Tvj = 25 °C 700 Tvj = 125 °C 630 Tvj = 25 °C 250 Tvj = 125 °C 220 VCC = 3600 V, IC = 400 A, RG = 5.6 Ω, VGE = ±15 V, Lσ = 280 nH, inductive load Tvj = 25 °C 1410 Tvj = 125 °C 1700 Tvj = 25 °C 650 Tvj = 125 °C 980 VCC = 3600 V, IC = 400 A, VGE = ±15 V, RG = 5.6 Ω, Lσ = 280 nH, inductive load Tvj = 25 °C 2250 Tvj = 125 °C 2800 VCC = 3600 V, IC = 400 A, VGE = ±15 V, RG = 5.6 Ω, Lσ = 280 nH, inductive load Tvj = 25 °C 1340 Tvj = 125 °C 2120 tpsc ≤ 10 μs, VGE = 15 V, Tvj = 125 °C, VCC = 4400 V, VCEM CHIP ≤ 6500 V ns ns ns ns mJ mJ 1800 A 20 nH TC = 25 °C 0.1 TC = 125 °C 0.15 mΩ Characteristic values according to IEC 60747 – 9 Collector-emitter saturation voltage is given at chip level ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1592-01 Jun 07 page 2 of 9 5SNA 0400J650100 Diode characteristic values Parameter Forward voltage 5) Symbol VF 6) Reverse recovery current Irr Recovered charge Qrr Reverse recovery time trr Reverse recovery energy 5) 6) Conditions IF = 400 A VCC = 3600 V, IF = 400 A, VGE = ±15 V, RG = 5.6 Ω Lσ = 280 nH inductive load Erec min typ max Tvj = 25 °C 3.2 3.8 Tvj = 125 °C 3.4 4.0 Tvj = 25 °C 510 Tvj = 125 °C 680 Tvj = 25 °C 450 Tvj = 125 °C 770 Tvj = 25 °C 1840 Tvj = 125 °C 2120 Tvj = 25 °C 670 Tvj = 125 °C 1380 Unit V A µC ns mJ Characteristic values according to IEC 60747 – 2 Forward voltage is given at chip level Package properties 7) Parameter Symbol IGBT thermal resistance junction to case Rth(j-c)IGBT 0.016 K/W Diode thermal resistance junction to case Rth(j-c)DIODE 0.032 K/W IGBT thermal resistance case to heatsink 2) Diode thermal resistance case to heatsink 7) min max Unit 0.012 K/W Rth(c-s)DIODE Diode per switch, λ grease = 1W/m x K 0.024 K/W Ve Comparative tracking index CTI f = 50 Hz, QPD ≤ 10pC (acc. to IEC 61287) 5100 V ≥ 600 For detailed mounting instructions refer to ABB Document No. 5SYA2039 Mechanical properties Parameter Dimensions 7) Symbol x L W x Conditions H Typical , see outline drawing min typ x max x 130 140 48 Clearance distance in air da according to IEC 60664-1 Term. to base: and EN 50124-1 Term. to term: 40 Surface creepage distance ds according to IEC 60664-1 Term. to base: and EN 50124-1 Term. to term: 64 Mass m 7) typ Rth(c-s)IGBT IGBT per switch, λ grease = 1W/m x K Partial discharge extinction voltage 2) Conditions Unit mm mm 26 mm 56 1150 g Package and mechanical properties according to IEC 60747 – 15 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1592-01 Jun 07 page 3 of 9 5SNA 0400J650100 Electrical configuration C (5) C (7) E (4) E (6) C (3) G (2) E (1) Outline drawing 2) Note: all dimensions are shown in mm 2) For detailed mounting instructions refer to ABB Document No. 5SYA2039 This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, chap. IX. This product has been designed and qualified for Industrial Level. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1592-01 Jun 07 page 4 of 9 5SNA 0400J650100 800 800 700 700 VCE = 20 V 600 600 25 °C 500 125 °C IC [A] IC [A] 500 400 400 300 300 200 200 25 °C 100 125 °C 100 VGE = 15V 0 0 0 1 2 3 4 5 6 7 8 0 1 2 3 4 5 VCE [V] Fig. 1 6 7 8 9 10 11 12 13 VGE [V] Fig. 2 Typical on-state characteristics, chip level Typical transfer characteristics, chip level 800 800 700 700 17V 15V 600 15V 500 13V 400 11V 11V 400 300 300 200 200 9V 100 13V 500 IC [A] IC [A] 600 17V 9V 100 Tvj = 25 °C Tvj = 125 °C 0 0 0 1 2 3 4 5 6 7 8 0 VCE [V] Fig. 3 Typical output characteristics, chip level 1 2 3 4 5 6 7 8 9 10 VCE [V] Fig. 4 Typical output characteristics, chip level ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1592-01 Jun 07 page 5 of 9 5SNA 0400J650100 8 9 VCC = 3600 V R G = 5.6 ohm VGE = ±15 V Tvj = 125 °C L σ = 280 nH 7 6 VCC = 3600 V IC = 400 A VGE = ±15 V Tvj = 125 °C L σ = 280 nH 8 7 E on 6 E on, E off [J] E on, E off [J] 5 4 E on 5 4 3 3 E off 2 2 E off 1 1 E sw [J] = 6.8 x 10 -6 x I C2 + 8.5 x 10 -3 x I C + 0.451 0 0 0 100 200 300 400 500 600 700 800 0 900 5 10 15 IC [A] Fig. 5 Typical switching energies per pulse vs collector current Fig. 6 10 25 30 35 40 Typical switching energies per pulse vs gate resistor 10 td(off) 1 VCC = 3600 V IC = 400 A VGE = ±15 V Tvj = 125 °C Lσ = 280 nH t d(on) , t r, t d(off) , t f [µs] VCC = 3600 V R G = 5.6 ohm VGE = ±15 V Tvj = 125 °C Lσ = 280 nH td(on) , t r, t d(off) , t f [µs] 20 R G [ohm] tf td(on) td(off) td(on) 1 tf tr tr 0.1 0.1 0 200 400 600 800 1000 0 IC [A] Fig. 7 Typical switching times vs collector current 5 10 15 20 25 30 35 40 R G [ohm] Fig. 8 Typical switching times vs gate resistor ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1592-01 Jun 07 page 6 of 9 5SNA 0400J650100 1000 20 VGE = 0V f OSC = 1 MHz VOSC = 50 mV VCC = 3600 V C ies 15 V GE [V] C [nF] 100 C oes 10 10 C res 5 1 IC = 400 A Tvj = 25 °C 0 0.1 0 Fig. 9 5 10 15 20 V CE [V] 25 30 0 35 1 2 3 4 5 Q g [µC] Typical capacitances vs collector-emitter voltage Fig. 10 Typical gate charge characteristics 2.5 VCC ≤ 4400 V, Tvj = 125 °C, VGE = ±15 V R Goff = 5.6 ohm, Lσ ≤ 280 nH 2 ICpulse / I C 1.5 1 0.5 Chip Module 0 0 Fig. 11 1000 2000 3000 4000 VCE [V] 5000 6000 7000 Turn-off safe operating area (RBSOA) ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1592-01 Jun 07 page 7 of 9 5SNA 0400J650100 1600 1400 1200 800 Irr 600 Q rr 800 Irr 600 400 400 200 200 -3 2 E rec [mJ] = -2.1 x 10 x I C + 3.58 x I C + 286 0 R G = 5.6 ohm 1000 1000 R G = 8.2 ohm Q rr 1200 E rec R G = 12 ohm 1400 E rec [mJ], I rr [A], Q rr [µC] E rec [mJ], I rr [A], Q rr [µC] 1600 VCC = 3600 V IF = 400 A VGE = ±15 V Tvj = 125 °C L σ = 280 nH R G = 39 ohm 1800 E rec R G = 18 ohm VCC = 3600 V R G = 5.6 ohm VGE = ±15 V Tvj = 125 °C Lσ = 280 nH R G = 27 ohm 2000 0 0 100 200 300 400 500 600 700 800 900 0 0.5 1 IF [A] Fig. 12 1.5 2 2.5 di/dt [kA/µs] Typical reverse recovery characteristics vs forward current Fig. 13 800 Typical reverse recovery characteristics vs di/dt 1000 VCC ≤ 4400 V di/dt ≤ 2500 A/µs Tvj = 125 °C Lσ ≤ 280 nH 700 800 600 125 °C 25 °C 600 IR [A] IF [A] 500 400 400 300 200 200 100 0 0 0 1 2 3 4 5 0 VF [V] Fig. 14 Typical diode forward characteristics, chip level 1000 2000 3000 4000 5000 6000 7000 VR [V] Fig. 15 Safe operating area diode (SOA) ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1592-01 Jun 07 page 8 of 9 5SNA 0400J650100 0.1 Analytical function for transient thermal impedance: Z th(j-c) Diode Z th (j-c) (t) = ∑ R i (1 - e -t/τ i ) Z th(j-c) IGBT 0.01 0.001 i 1 2 IGBT i =1 Ri(K/kW) 12.75 2.99 τi(ms) 151 5.84 DIODE Z th(j-c) [K/W] IGBT, DIODE n Ri(K/kW) 25.5 6.3 τi(ms) 144 5.83 3 4 5 0.0001 0.001 Fig. 16 0.01 0.1 t [s] 1 10 Thermal impedance vs time For detailed information refer to: • 5SYA 2042-02 Failure rates of HiPak modules due to cosmic rays • 5SYA 2043-01 Load – cycle capability of HiPaks • 5SZK 9120-00 Specification of environmental class for HiPak ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 [email protected] www.abb.com/semiconductors Doc. No. 5SYA 1592-01 Jun 07