ABB 5SNA1200G3301

VCE
IC
=
=
3300 V
1200 A
ABB HiPakTM
IGBT Module
5SNA 1200G330100
Doc. No. 5SYA1563-00 Apr.06
• Low-loss, rugged SPT chip-set
• Smooth switching SPT chip-set for
good EMC
• High insulation package
• High power density
• AlSiC base-plate for high power
cycling capability
• AlN substrate for low thermal
resistance
Maximum rated values
1)
Parameter
Symbol
Collector-emitter voltage
max
Unit
VGE = 0 V
3300
V
DC collector current
IC
Tc = 80 °C
1200
A
Peak collector current
ICM
tp = 1 ms, Tc = 80 °C
2400
A
20
V
11750
W
1200
A
2400
A
14000
A
10
µs
10200
V
125
°C
Total power dissipation
DC forward current
Peak forward current
Surge current
VGES
Ptot
-20
Tc = 25 °C, per switch (IGBT)
IF
IFRM
IFSM
VR = 0 V, Tvj = 125 °C,
tp = 10 ms, half-sinewave
IGBT short circuit SOA
tpsc
VCC = 2500 V, VCEM CHIP ≤ 3300 V
VGE ≤ 15 V, Tvj ≤ 125 °C
Isolation voltage
Visol
1 min, f = 50 Hz
Junction temperature
Tvj
Junction operating temperature
Tvj(op)
-40
125
°C
Case temperature
Tc
-40
125
°C
Storage temperature
Tstg
-40
125
°C
Mounting torques
2)
min
VCES
Gate-emitter voltage
1)
Conditions
2)
Ms
Base-heatsink, M6 screws
4
6
Mt1
Main terminals, M8 screws
8
10
Mt2
Auxiliary terminals, M4 screws
2
3
Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747
For detailed mounting instructions refer to ABB Document No. 5SYA2039
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Nm
5SNA 1200G330100
IGBT characteristic values
3)
Parameter
Symbol
Conditions
min
Collector (-emitter)
breakdown voltage
V(BR)CES
VGE = 0 V, IC = 10 mA, Tvj = 25 °C
3300
Collector-emitter 4)
saturation voltage
VCE sat
IC = 1200 A, VGE = 15 V
Collector cut-off current
ICES
VCE = 3300 V, VGE = 0 V
Gate leakage current
IGES
VCE = 0 V, VGE = ±20 V, Tvj = 125 °C
VGE(TO)
IC = 240 mA, VCE = VGE, Tvj = 25 °C
Gate-emitter threshold voltage
Gate charge
Qge
Input capacitance
Cies
Output capacitance
Coes
Reverse transfer capacitance
Cres
Turn-on delay time
td(on)
Rise time
Turn-off delay time
Fall time
Turn-on switching energy
Turn-off switching energy
Short circuit current
tr
td(off)
tf
Eon
Eoff
ISC
Module stray inductance
Lσ CE
Resistance, terminal-chip
RCC’+EE’
3)
4)
Tvj = 25 °C
Tvj = 125 °C
typ
max
V
3.1
3.5
Unit
4.3
V
Tvj = 25 °C
12
mA
Tvj = 125 °C
120
mA
-500
500
nA
5.5
7.5
V
IC = 1200 A, VCE = 1800 V,
VGE = -15 V .. 15 V
3.85
V
10.9
µC
187
VCE = 25 V, VGE = 0 V, f = 1 MHz,
Tvj = 25 °C
11.6
nF
2.22
VCC = 1800 V,
IC = 1200 A,
RG = 1.5 Ω,
VGE = ±15 V,
Lσ = 125 nH, inductive load
Tvj = 25 °C
530
Tvj = 125 °C
500
Tvj = 25 °C
230
Tvj = 125 °C
230
VCC = 1800 V,
IC = 1200 A,
RG = 1.5 Ω,
VGE = ±15 V,
Lσ = 125 nH, inductive load
Tvj = 25 °C
1200
Tvj = 125 °C
1330
Tvj = 25 °C
350
Tvj = 125 °C
440
VCC = 1800 V, IC = 1200 A,
VGE = ±15 V, RG = 1.5 Ω,
Lσ = 125 nH, inductive load
Tvj = 25 °C
1260
Tvj = 125 °C
1730
VCC = 1800 V, IC = 1200 A,
VGE = ±15 V, RG = 1.5 Ω,
Lσ = 125 nH, inductive load
Tvj = 25 °C
1340
Tvj = 125 °C
1900
tpsc ≤ 10 μs, VGE = 15 V, Tvj = 125 °C,
VCC = 2500 V, VCEM CHIP ≤ 3300 V
ns
ns
ns
ns
mJ
mJ
5100
A
18
nH
TC = 25 °C
0.07
TC = 125 °C
0.1
mΩ
Characteristic values according to IEC 60747 – 9
Collector-emitter saturation voltage is given at chip level
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1563-00 Apr.06
page 2 of 9
5SNA 1200G330100
Diode characteristic values
Parameter
Forward voltage
5)
Symbol
Conditions
VF
IF = 1200 A
6)
Reverse recovery current
Irr
Recovered charge
Qrr
Reverse recovery time
trr
Reverse recovery energy
5)
6)
VCC = 1800 V,
IF = 1200 A,
VGE = ±15 V,
RG = 1.5 Ω
Lσ = 125 nH
inductive load
Erec
min
typ
Tvj = 25 °C
Tvj = 125 °C
max
2.3
2.0
2.35
Tvj = 25 °C
1090
Tvj = 125 °C
1420
Tvj = 25 °C
710
Tvj = 125 °C
1300
Tvj = 25 °C
560
Tvj = 125 °C
1280
Tvj = 25 °C
880
Tvj = 125 °C
1670
2.7
Unit
V
A
µC
ns
mJ
Characteristic values according to IEC 60747 – 2
Forward voltage is given at chip level
Package properties
7)
Parameter
Symbol
IGBT thermal resistance
junction to case
Rth(j-c)IGBT
0.0085 K/W
Diode thermal resistance
junction to case
Rth(j-c)DIODE
0.017 K/W
IGBT thermal resistance
case to heatsink
2)
Diode thermal resistance
case to heatsink
7)
min
max
Unit
0.009
K/W
Rth(c-s)DIODE Diode per switch, λ grease = 1W/m x K
0.018
K/W
Ve
Comparative tracking index
CTI
f = 50 Hz, QPD ≤ 10pC (acc. to IEC 61287) 5100
V
≥ 600
For detailed mounting instructions refer to ABB Document No. 5SYA2039
Mechanical properties
Parameter
Dimensions
7)
Symbol
x
L W
x
Conditions
H Typical , see outline drawing
min
typ
x
max
x
190 140 48
Clearance distance in air
da
according to IEC 60664-1 Term. to base:
and EN 50124-1
Term. to term:
40
Surface creepage distance
ds
according to IEC 60664-1 Term. to base:
and EN 50124-1
Term. to term:
64
Mass
m
7)
typ
Rth(c-s)IGBT IGBT per switch, λ grease = 1W/m x K
Partial discharge extinction
voltage
2)
Conditions
Unit
mm
mm
26
mm
56
1760
g
Package and mechanical properties according to IEC 60747 – 15
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1563-00 Apr.06
page 3 of 9
5SNA 1200G330100
Electrical configuration
Outline drawing
2)
Note: all dimensions are shown in mm
2)
For detailed mounting instructions refer to ABB Document No. 5SYA2039
This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, chap. IX.
This product has been designed and qualified for Industrial Level.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1563-00 Apr.06
page 4 of 9
5SNA 1200G330100
2400
2400
VCE = 20V
2000
2000
25 °C
1600
1600
IC [A]
IC [A]
125 °C
1200
1200
800
800
125°C
400
400
25°C
VGE = 15 V
0
0
0
1
2
3
4
5
0
6
1
2
3
4
6
7
8
9 10 11 12 13
VGE [V]
VCE [V]
Fig. 1
5
Fig. 2
Typical on-state characteristics, chip level
2400
Typical transfer characteristics, chip level
2400
Tvj = 25 °C
17 V
2000
17 V
2000
15 V
15 V
13 V
13 V
1600
11 V
IC [A]
IC [A]
1600
1200
800
11 V
1200
800
9V
9V
400
400
0
0
Tvj = 125 °C
0
1
2
3
4
5
0
VCE [V]
Fig. 3
Typical output characteristics, chip level
1
2
3
4
5
6
7
VCE [V]
Fig. 4
Typical output characteristics, chip level
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1563-00 Apr.06
page 5 of 9
5SNA 1200G330100
5
9
VCC = 1800 V
RG = 1.5 ohm
VGE = ±15 V
Tvj = 125 °C
Lσ = 125 nH
4
VCC = 1800 V
IC = 1200 A
VGE = ±15 V
Tvj = 125 °C
Lσ = 125 nH
Eon
8
7
Eon
Eon, Eoff [J]
Eon, Eoff [J]
6
Eoff
3
2
5
4
3
2
1
Eoff
1
Esw [J] = 462 x 10-9 x IC2 + 206 x 10-5 x I C + 0.56
0
0
0
500
1000
1500
2000
0
2500
5
10
IC [A]
Fig. 5
Typical switching energies per pulse
vs collector current
Fig. 6
Typical switching energies per pulse
vs gate resistor
10
10
VCC = 1800 V
IC = 1200 A
VGE = ±15 V
Tvj = 125 °C
Lσ = 125 nH
tf
1
td(on), tr, td(off), tf [µs]
td(on), tr, td(off), tf [µs]
td(off)
td(on)
td(off)
td(on)
tr
1
tf
0.1
tr
VCC = 1800 V
RG = 1.5 ohm
VGE = ±15 V
Tvj = 125 °C
Lσ = 125 nH
0.01
0
500
1000
1500
2000
0.1
0
2500
Typical switching times
vs collector current
5
10
15
RG [ohm]
IC [A]
Fig. 7
15
RG [ohm]
Fig. 8
Typical switching times
vs gate resistor
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1563-00 Apr.06
page 6 of 9
5SNA 1200G330100
1000
20
VGE = 0V
fOSC = 1 MHz
VOSC = 50 mV
VCC = 1800 V
Cies
15
100
VGE [V]
C [nF]
VCC = 2500 V
Coes
10
10
5
Cres
IC = 1200 A
Tvj = 25 °C
0
1
0
Fig. 9
5
10
15
20
VCE [V]
25
30
0
35
Typical capacitances
vs collector-emitter voltage
Fig. 10
1
2
3
4
5
Qg [µC]
6
7
8
9
Typical gate charge characteristics
2.5
VCC ≤ 2500 V, Tvj = 125 °C
VGE = ±15 V, RG = 1.5 ohm
2
ICpulse / IC
1.5
1
0.5
Chip
Module
0
0
Fig. 11
500
1000
1500 2000
VCE [V]
2500
3000
3500
Turn-off safe operating area (RBSOA)
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1563-00 Apr.06
page 7 of 9
5SNA 1200G330100
2200
1800
VCC = 1800 V
RG = 1.5 ohm
Tvj = 125 °C
Lσ = 125 nH
Qrr
1000
800
600
Qrr
1000
800
Erec
600
Irr
RG = 15 ohm
400
400
200
200
Erec [mJ] = -3.0 x 10-4 x I F2 + 1.38 x I F + 397
0
VCC = 1800 V
IF = 1200 A
Tvj = 125 °C
Lσ = 125 nH
0
0
500
1000
1500
2000
2500
0
1
IF [A]
Fig. 12
RG = 1.5 ohm
1200
1200
RG = 2.2 ohm
Irr
RG = 3.3 ohm
1400
RG = 1 ohm
1400
1600
Erec [mJ], Qrr [µC], Irr [A]
Erec [mJ], Qrr [µC], Irr [A]
1800
1600
RG = 6.8 ohm
2000
Erec
2
3
4
5
6
7
di/dt [kA/µs]
Typical reverse recovery characteristics
vs forward current
Fig. 13
Typical reverse recovery characteristics
vs di/dt
2800
2400
VCC ≤ 2500 V
di/dt ≤ 8000 A/µs
Tvj = 125 °C
2400
2000
25°C
2000
125°C
1600
IR [A]
IF [A]
1600
1200
1200
800
800
400
400
0
0
0
1
2
3
4
0
VF [V]
Fig. 14
Typical diode forward characteristics,
chip level
500
1000 1500 2000 2500
3000 3500
VR [V]
Fig. 15
Safe operating area diode (SOA)
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1563-00 Apr.06
page 8 of 9
5SNA 1200G330100
0.1
Analytical function for transient thermal
impedance:
Z th (j-c) (t) = ∑ R i (1 - e -t/τ i )
0.01
i =1
0.001
i
1
2
3
4
IGBT
Zth(j-c) IGBT
Ri(K/kW)
5.85
1.38
0.641
0.632
τi(ms)
207
30.1
7.55
1.57
DIODE
Zth(j-c) [K/W] IGBT, DIODE
n
Zth(j-c) Diode
Ri(K/kW)
11.5
2.89
1.23
1.3
τi(ms)
204
30.1
7.53
1.57
5
0.0001
0.001
Fig. 16
0.01
0.1
t [s]
1
10
Thermal impedance vs time
For detailed information refer to:
• 5SYA 2042-02 Failure rates of HiPak modules due to cosmic rays
• 5SYA 2043-01 Load – cycle capability of HiPaks
• 5SZK 9120-00 Specification of environmental class for HiPak
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone
Fax
Email
Internet
+41 (0)58 586 1419
+41 (0)58 586 1306
abbsem@ch.abb.com
www.abb.com/semiconductors
Doc. No. 5SYA1563-00 Apr.06