VCE IC = = 3300 V 1200 A ABB HiPakTM IGBT Module 5SNA 1200G330100 Doc. No. 5SYA1563-00 Apr.06 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • High insulation package • High power density • AlSiC base-plate for high power cycling capability • AlN substrate for low thermal resistance Maximum rated values 1) Parameter Symbol Collector-emitter voltage max Unit VGE = 0 V 3300 V DC collector current IC Tc = 80 °C 1200 A Peak collector current ICM tp = 1 ms, Tc = 80 °C 2400 A 20 V 11750 W 1200 A 2400 A 14000 A 10 µs 10200 V 125 °C Total power dissipation DC forward current Peak forward current Surge current VGES Ptot -20 Tc = 25 °C, per switch (IGBT) IF IFRM IFSM VR = 0 V, Tvj = 125 °C, tp = 10 ms, half-sinewave IGBT short circuit SOA tpsc VCC = 2500 V, VCEM CHIP ≤ 3300 V VGE ≤ 15 V, Tvj ≤ 125 °C Isolation voltage Visol 1 min, f = 50 Hz Junction temperature Tvj Junction operating temperature Tvj(op) -40 125 °C Case temperature Tc -40 125 °C Storage temperature Tstg -40 125 °C Mounting torques 2) min VCES Gate-emitter voltage 1) Conditions 2) Ms Base-heatsink, M6 screws 4 6 Mt1 Main terminals, M8 screws 8 10 Mt2 Auxiliary terminals, M4 screws 2 3 Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 For detailed mounting instructions refer to ABB Document No. 5SYA2039 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Nm 5SNA 1200G330100 IGBT characteristic values 3) Parameter Symbol Conditions min Collector (-emitter) breakdown voltage V(BR)CES VGE = 0 V, IC = 10 mA, Tvj = 25 °C 3300 Collector-emitter 4) saturation voltage VCE sat IC = 1200 A, VGE = 15 V Collector cut-off current ICES VCE = 3300 V, VGE = 0 V Gate leakage current IGES VCE = 0 V, VGE = ±20 V, Tvj = 125 °C VGE(TO) IC = 240 mA, VCE = VGE, Tvj = 25 °C Gate-emitter threshold voltage Gate charge Qge Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Turn-on delay time td(on) Rise time Turn-off delay time Fall time Turn-on switching energy Turn-off switching energy Short circuit current tr td(off) tf Eon Eoff ISC Module stray inductance Lσ CE Resistance, terminal-chip RCC’+EE’ 3) 4) Tvj = 25 °C Tvj = 125 °C typ max V 3.1 3.5 Unit 4.3 V Tvj = 25 °C 12 mA Tvj = 125 °C 120 mA -500 500 nA 5.5 7.5 V IC = 1200 A, VCE = 1800 V, VGE = -15 V .. 15 V 3.85 V 10.9 µC 187 VCE = 25 V, VGE = 0 V, f = 1 MHz, Tvj = 25 °C 11.6 nF 2.22 VCC = 1800 V, IC = 1200 A, RG = 1.5 Ω, VGE = ±15 V, Lσ = 125 nH, inductive load Tvj = 25 °C 530 Tvj = 125 °C 500 Tvj = 25 °C 230 Tvj = 125 °C 230 VCC = 1800 V, IC = 1200 A, RG = 1.5 Ω, VGE = ±15 V, Lσ = 125 nH, inductive load Tvj = 25 °C 1200 Tvj = 125 °C 1330 Tvj = 25 °C 350 Tvj = 125 °C 440 VCC = 1800 V, IC = 1200 A, VGE = ±15 V, RG = 1.5 Ω, Lσ = 125 nH, inductive load Tvj = 25 °C 1260 Tvj = 125 °C 1730 VCC = 1800 V, IC = 1200 A, VGE = ±15 V, RG = 1.5 Ω, Lσ = 125 nH, inductive load Tvj = 25 °C 1340 Tvj = 125 °C 1900 tpsc ≤ 10 μs, VGE = 15 V, Tvj = 125 °C, VCC = 2500 V, VCEM CHIP ≤ 3300 V ns ns ns ns mJ mJ 5100 A 18 nH TC = 25 °C 0.07 TC = 125 °C 0.1 mΩ Characteristic values according to IEC 60747 – 9 Collector-emitter saturation voltage is given at chip level ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1563-00 Apr.06 page 2 of 9 5SNA 1200G330100 Diode characteristic values Parameter Forward voltage 5) Symbol Conditions VF IF = 1200 A 6) Reverse recovery current Irr Recovered charge Qrr Reverse recovery time trr Reverse recovery energy 5) 6) VCC = 1800 V, IF = 1200 A, VGE = ±15 V, RG = 1.5 Ω Lσ = 125 nH inductive load Erec min typ Tvj = 25 °C Tvj = 125 °C max 2.3 2.0 2.35 Tvj = 25 °C 1090 Tvj = 125 °C 1420 Tvj = 25 °C 710 Tvj = 125 °C 1300 Tvj = 25 °C 560 Tvj = 125 °C 1280 Tvj = 25 °C 880 Tvj = 125 °C 1670 2.7 Unit V A µC ns mJ Characteristic values according to IEC 60747 – 2 Forward voltage is given at chip level Package properties 7) Parameter Symbol IGBT thermal resistance junction to case Rth(j-c)IGBT 0.0085 K/W Diode thermal resistance junction to case Rth(j-c)DIODE 0.017 K/W IGBT thermal resistance case to heatsink 2) Diode thermal resistance case to heatsink 7) min max Unit 0.009 K/W Rth(c-s)DIODE Diode per switch, λ grease = 1W/m x K 0.018 K/W Ve Comparative tracking index CTI f = 50 Hz, QPD ≤ 10pC (acc. to IEC 61287) 5100 V ≥ 600 For detailed mounting instructions refer to ABB Document No. 5SYA2039 Mechanical properties Parameter Dimensions 7) Symbol x L W x Conditions H Typical , see outline drawing min typ x max x 190 140 48 Clearance distance in air da according to IEC 60664-1 Term. to base: and EN 50124-1 Term. to term: 40 Surface creepage distance ds according to IEC 60664-1 Term. to base: and EN 50124-1 Term. to term: 64 Mass m 7) typ Rth(c-s)IGBT IGBT per switch, λ grease = 1W/m x K Partial discharge extinction voltage 2) Conditions Unit mm mm 26 mm 56 1760 g Package and mechanical properties according to IEC 60747 – 15 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1563-00 Apr.06 page 3 of 9 5SNA 1200G330100 Electrical configuration Outline drawing 2) Note: all dimensions are shown in mm 2) For detailed mounting instructions refer to ABB Document No. 5SYA2039 This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, chap. IX. This product has been designed and qualified for Industrial Level. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1563-00 Apr.06 page 4 of 9 5SNA 1200G330100 2400 2400 VCE = 20V 2000 2000 25 °C 1600 1600 IC [A] IC [A] 125 °C 1200 1200 800 800 125°C 400 400 25°C VGE = 15 V 0 0 0 1 2 3 4 5 0 6 1 2 3 4 6 7 8 9 10 11 12 13 VGE [V] VCE [V] Fig. 1 5 Fig. 2 Typical on-state characteristics, chip level 2400 Typical transfer characteristics, chip level 2400 Tvj = 25 °C 17 V 2000 17 V 2000 15 V 15 V 13 V 13 V 1600 11 V IC [A] IC [A] 1600 1200 800 11 V 1200 800 9V 9V 400 400 0 0 Tvj = 125 °C 0 1 2 3 4 5 0 VCE [V] Fig. 3 Typical output characteristics, chip level 1 2 3 4 5 6 7 VCE [V] Fig. 4 Typical output characteristics, chip level ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1563-00 Apr.06 page 5 of 9 5SNA 1200G330100 5 9 VCC = 1800 V RG = 1.5 ohm VGE = ±15 V Tvj = 125 °C Lσ = 125 nH 4 VCC = 1800 V IC = 1200 A VGE = ±15 V Tvj = 125 °C Lσ = 125 nH Eon 8 7 Eon Eon, Eoff [J] Eon, Eoff [J] 6 Eoff 3 2 5 4 3 2 1 Eoff 1 Esw [J] = 462 x 10-9 x IC2 + 206 x 10-5 x I C + 0.56 0 0 0 500 1000 1500 2000 0 2500 5 10 IC [A] Fig. 5 Typical switching energies per pulse vs collector current Fig. 6 Typical switching energies per pulse vs gate resistor 10 10 VCC = 1800 V IC = 1200 A VGE = ±15 V Tvj = 125 °C Lσ = 125 nH tf 1 td(on), tr, td(off), tf [µs] td(on), tr, td(off), tf [µs] td(off) td(on) td(off) td(on) tr 1 tf 0.1 tr VCC = 1800 V RG = 1.5 ohm VGE = ±15 V Tvj = 125 °C Lσ = 125 nH 0.01 0 500 1000 1500 2000 0.1 0 2500 Typical switching times vs collector current 5 10 15 RG [ohm] IC [A] Fig. 7 15 RG [ohm] Fig. 8 Typical switching times vs gate resistor ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1563-00 Apr.06 page 6 of 9 5SNA 1200G330100 1000 20 VGE = 0V fOSC = 1 MHz VOSC = 50 mV VCC = 1800 V Cies 15 100 VGE [V] C [nF] VCC = 2500 V Coes 10 10 5 Cres IC = 1200 A Tvj = 25 °C 0 1 0 Fig. 9 5 10 15 20 VCE [V] 25 30 0 35 Typical capacitances vs collector-emitter voltage Fig. 10 1 2 3 4 5 Qg [µC] 6 7 8 9 Typical gate charge characteristics 2.5 VCC ≤ 2500 V, Tvj = 125 °C VGE = ±15 V, RG = 1.5 ohm 2 ICpulse / IC 1.5 1 0.5 Chip Module 0 0 Fig. 11 500 1000 1500 2000 VCE [V] 2500 3000 3500 Turn-off safe operating area (RBSOA) ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1563-00 Apr.06 page 7 of 9 5SNA 1200G330100 2200 1800 VCC = 1800 V RG = 1.5 ohm Tvj = 125 °C Lσ = 125 nH Qrr 1000 800 600 Qrr 1000 800 Erec 600 Irr RG = 15 ohm 400 400 200 200 Erec [mJ] = -3.0 x 10-4 x I F2 + 1.38 x I F + 397 0 VCC = 1800 V IF = 1200 A Tvj = 125 °C Lσ = 125 nH 0 0 500 1000 1500 2000 2500 0 1 IF [A] Fig. 12 RG = 1.5 ohm 1200 1200 RG = 2.2 ohm Irr RG = 3.3 ohm 1400 RG = 1 ohm 1400 1600 Erec [mJ], Qrr [µC], Irr [A] Erec [mJ], Qrr [µC], Irr [A] 1800 1600 RG = 6.8 ohm 2000 Erec 2 3 4 5 6 7 di/dt [kA/µs] Typical reverse recovery characteristics vs forward current Fig. 13 Typical reverse recovery characteristics vs di/dt 2800 2400 VCC ≤ 2500 V di/dt ≤ 8000 A/µs Tvj = 125 °C 2400 2000 25°C 2000 125°C 1600 IR [A] IF [A] 1600 1200 1200 800 800 400 400 0 0 0 1 2 3 4 0 VF [V] Fig. 14 Typical diode forward characteristics, chip level 500 1000 1500 2000 2500 3000 3500 VR [V] Fig. 15 Safe operating area diode (SOA) ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1563-00 Apr.06 page 8 of 9 5SNA 1200G330100 0.1 Analytical function for transient thermal impedance: Z th (j-c) (t) = ∑ R i (1 - e -t/τ i ) 0.01 i =1 0.001 i 1 2 3 4 IGBT Zth(j-c) IGBT Ri(K/kW) 5.85 1.38 0.641 0.632 τi(ms) 207 30.1 7.55 1.57 DIODE Zth(j-c) [K/W] IGBT, DIODE n Zth(j-c) Diode Ri(K/kW) 11.5 2.89 1.23 1.3 τi(ms) 204 30.1 7.53 1.57 5 0.0001 0.001 Fig. 16 0.01 0.1 t [s] 1 10 Thermal impedance vs time For detailed information refer to: • 5SYA 2042-02 Failure rates of HiPak modules due to cosmic rays • 5SYA 2043-01 Load – cycle capability of HiPaks • 5SZK 9120-00 Specification of environmental class for HiPak ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 [email protected] www.abb.com/semiconductors Doc. No. 5SYA1563-00 Apr.06