ABB 5SNS0300U1201

VCE
IC
=
=
1200 V
300 A
IGBT Module LoPak5 SPT
5SNS 0300U120100
Doc. No. 5SYA1528-02 July 03
· Low-loss, rugged SPT chip-set
· Smooth switching SPT chip-set for
good EMC
· Low profile compact baseless
package for high power cycling
capability
· Snap-on PCB assembly
· Integrated PTC substrate
temperature sensor
Maximum rated values 1)
Parameter
Collector-emitter voltage
Symbol Conditions
VCES
VGE = 0 V, Tvj ³ 25 °C
min
max
1200
Unit
V
DC collector current
IC
Th = 60 °C
300
A
Peak collector current
ICM
tp = 1 ms, Th = 60 °C
600
A
20
V
960
W
300
A
600
A
3600
A
10
µs
2500
V
150
°C
Gate-emitter voltage
Total power dissipation
VGES
Ptot
DC forward current
IF
Peak forward current
IFM
Surge current
IFSM
-20
Th = 25 °C, per switch (IGBT)
VR = 0 V, Tvj = 125 °C,
tp = 10 ms, half-sinewave
IGBT short circuit SOA
tpsc
VCC = 900 V, VCEM CHIP £ 1200 V
VGE £ 15 V, Tvj £ 125 °C
Isolation voltage
Visol
1 min, f = 50 Hz
Junction temperature
Tvj
Case operating temperature
Storage temperature
Mounting torques
Tc(op)
-40
125
°C
Tstg
-40
125
°C
M1
Base-heatsink, M5 screws
2
3
M2
Main terminals, M6 screws
4
5
1) Maximum rated values indicate limits beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Nm
5SNS 0300U120100
IGBT characteristic values
Parameter
Symbol Conditions
min
Collector (-emitter)
breakdown voltage
V(BR)CES
1200
VGE = 0 V, IC = 10 mA, Tvj = 25 °C
2)
Collector-emitter
saturation voltage
VCE sat
IC = 300 A, VGE = 15 V
1.9
Tvj = 125 °C
2.1
Tvj = 25 °C
ICES
VCE = 1200 V, VGE = 0 V
Gate leakage current
IGES
VCE = 0 V, VGE = ±20 V, Tvj = 125 °C
VGE(TO)
Gate charge
Qge
Input capacitance
Cies
Output capacitance
Coes
Reverse transfer capacitance
Cres
Turn-on delay time
td(on)
Rise time
Turn-off delay time
Fall time
tr
td(off)
tf
IC = 300 A, VCE = 600 V,
VGE = -15 V .. 15 V
VCC = 600 V,
IC = 300 A,
RG = 3.3 W,
VGE = ±15 V,
Ls = 55 nH, inductive load
nF
1.3
80
Tvj = 25 °C
770
Tvj = 125 °C
750
Tvj = 25 °C
60
Tvj = 125 °C
70
Tvj = 25 °C
19
Tvj = 125 °C
28
Tvj = 25 °C
24
Tvj = 125 °C
34
tpsc ≤ 10 µs, VGE = 15 V, Tvj = 125 °C,
VCC = 900 V, VCEM CHIP ≤ 1200 V
RCC’+EE’
3.0
Tvj = 125 °C
ISC
nC
27
80
Short circuit current
Resistance, terminal-chip
V
Tvj = 25 °C
VCC = 600 V, IC = 300 A,
VGE = ±15, RG = 3.3 W,
Ls = 55 nH, inductive load
Ls DC
6.5
180
Eoff
Module stray inductance
plus to minus
4.5
Tvj = 125 °C
Turn-off switching energy
mA
nA
150
VCC = 600 V, IC = 300 A,
VGE = ±15, RG = 3.3 W,
Ls = 55 nH, inductive load
mA
500
Tvj = 25 °C
Eon
V
-500
4000
Turn-on switching energy
Unit
V
15
VCE = 25 V, VGE = 0 V, f = 1 MHz,
Tvj = 25 °C
VCC = 600 V,
IC = 300 A,
RG = 3.3 W,
VGE = ±15 V,
Ls = 55 nH, inductive load
2.3
1
Tvj = 125 °C
IC = 12 mA, VCE = VGE, Tvj = 25 °C
max
V
Tvj = 25 °C
Collector cut-off current
Gate-emitter threshold voltage
typ
ns
ns
ns
ns
mJ
mJ
1650
A
20
nH
Th = 25 °C
0.9
Th = 125 °C
1.0
mΩ
2) Collector emitter saturation voltage is given at chip level
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1528-02 July 03
page 2 of 9
5SNS 0300U120100
Diode characteristic values
Parameter
Symbol Conditions
3)
Continous forward voltage
VF
Peak reverse recovery
current
IF = 300 A
IRM
Recovered charge
VCC = 600 V,
IF = 300 A,
VGE = ±15 V,
RG = 3.3 W
Ls = 55 nH
inductive load
QRR
Reverse recovery time
trr
Reverse recovery energy
Erec
min
typ
max
Tvj = 25 °C
1.9
2.1
Tvj = 125 °C
1.9
Tvj = 25 °C
250
Tvj = 125 °C
340
Tvj = 25 °C
27
Tvj = 125 °C
58
Tvj = 25 °C
120
Tvj = 125 °C
180
Tvj = 25 °C
13
Tvj = 125 °C
27
Unit
V
A
µC
ns
mJ
3) Forward voltage is given at chip level
Thermal properties
Parameter
Symbol Conditions
IGBT thermal resistance
junction to heatsink
Diode thermal resistance
junction to heatsink
4)
Rth(j-h)IGBT
4)
Temperature sensor
Rth(j-h)DIODE
PTC
min
typ
max
Unit
0.13
K/W
0.19
K/W
max
Unit
184.5 106.5 34.5
mm
Heatsink: flatness < ±50 µm,
roughness < 6 µm without ridge
Thermal grease: conductivity ³ 0.8 W/mK,
thickness 30 µm < t < 50 µm
RT = RT0 exp [B (1/T - 1/T0)]
RT0 = 1kΩ (±3%), B = -760 K (±2%), T0 = 298 K
Mechanical properties
Parameter
Symbol Conditions
Dimensions
L W
x
x
H
Typical , see outline drawing
min
typ
x
Clearance distance
DC
according to IEC 60664-1 Term. to base:
and EN 50124-1
Term. to term:
Surface creepage distance
DSC
according to IEC 60664-1 Term. to base: 9.5
and EN 50124-1
Term. to term: 12.5
9.5
mm
11
Weight
Mounting
x
mm
460
4)
gr
PCB mounting
Hole for selftapping screw: 2.5 mm diameter, 6.0 mm deep
Control terminal
Spring pins, pitch of pins = 4 mm, PCB thickness = 1.6 mm
4) For detailed mounting instructions refer to ABB Document No. 5SYA 2017
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1528-02 July 03
page 3 of 9
5SNS 0300U120100
Electrical configuration
Outline drawing
For mounting instructions refer to ABB document No. 5SYA 2017
This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, chap. IX.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1528-02 July 03
page 4 of 9
5SNS 0300U120100
600
600
17V
15V
15V
500
17V
500
13V
13V
11V
11V
400
9V
IC [A]
IC [A]
400
300
9V
300
200
200
100
100
Tvj = 25 °C
Tvj = 125 °C
0
0
0
1
2
3
4
5
0
1
2
VCE [V]
Fig. 1
3
4
5
VCE [V]
Typical output characteristics, chip level
Fig. 2
Typical output characteristics, chip level
2.5
600
VGE = ±15 V, RG = 3.3 ohm
Tvj = 150 °C
VCE = 20 V
500
2
400
IC pulse / IC
IC [A]
1.5
300
1
200
25 °C
125 °C
0.5
100
Chip
Power terminals
0
0
0
Fig. 3
1
2
3
4
5 6 7
VGE [V]
8
9
10 11 12
Typical transfer characteristics, chip level
0
Fig. 4
200
400
600
800
VCE [V]
1000
1200
1400
Turn-off safe operating area (RBSOA)
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1528-02 July 03
page 5 of 9
5SNS 0300U120100
0.10
0.10
VCC = 600 V
RG = 3.3 ohm
VGE = ±15 V
Tvj = 125 °C
Ls = 55 nH
0.09
0.08
0.07
0.07
0.06
0.06
Eon, Eoff [J]
Eon, Eoff [J]
0.08
0.05
Eoff
0.04
Eon
0.03
VCC = 600 V
IC = 300 A
VGE = ±15 V
Tvj = 125 °C
Ls = 55 nH
0.09
Eon
0.05
Eoff
0.04
0.03
0.02
0.02
0.01
0.01
2
ESW [ mJ ] = (1,74E - 4 ´ I C + 1,25E - 1´ I C + 9,38)
0.00
0.00
0
Fig. 5
100
200
300
400
IC [A]
500
600
700
Typical switching energies per pulse
vs collector current
0
Fig. 6
5
10
15
RG [ohm]
20
25
Typical switching energies per pulse
vs gate resistor
10.00
1.00
td(off)
td(off)
td(on), tr, td(off), tf [µs]
td(on), tr, td(off), tf [µs]
td(on)
tr
0.10
tf
1.00
td(on)
tr
0.10
tf
VCC = 600 V
RG = 3.3 ohm
VGE = ±15 V
Tvj = 125 °C
Ls = 55 nH
0.01
0.01
0
Fig. 7
VCC = 600 V
IC = 300 A
VGE = ±15 V
Tvj = 125 °C
Ls = 55 nH
100
200
300
400
IC [ A ]
Typical switching times
vs collector current
500
600
700
0
Fig. 8
5
10
15
RG [ohm]
20
25
Typical switching times
vs gate resistor
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1528-02 July 03
page 6 of 9
5SNS 0300U120100
100
20
VGE = 0 V
fOSC = 1 MHz
VOSC = 50 mV
VCC = 600 V
Cies
15
VGE [V]
C [nF]
VCC = 800 V
10
10
Coes
5
Cres
IC = 300 A
Tvj = 25 °C
1
0
0
5
10
15
20
25
30
35
0
1
VCE [V]
Fig. 9
Typical capacitances
vs collector-emitter voltage
Fig. 10
400
2
Qg [µC]
3
Typical gate charge characteristics
2000
VGE ³ 15 V
Tvj = 150 °C
1800
1600
300
1400
RT [ohm]
IC, IF [A]
1200
200
1000
800
600
100
RT = RT 0e B (1 T -1 T0 )
400
RT 0 = 1kW ( ±3 %), B = -760 K ( ±2%), T0 = 298 K
200
IGBT
Diode
0
0
0
Fig. 11
20
40
60
80
100
Th [°C]
120
Rated current vs temperature
140
0
160
20
40
60
80
100
120
140
T [°C]
Fig. 12
PTC temperature sensor
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1528-02 July 03
page 7 of 9
5SNS 0300U120100
40
Irr
30
700
300
600
250
500
VCC = 600 V
RG = 3.3 ohm
Tvj = 125 °C
Ls = 55 nH
20
200
IF [A]
Erec [mJ]
350
25 °C
Erec
25
800
Irr [A], Qrr [µC]
35
400
400
300
15
150
10
100
200
50
100
Qrr
5
125 °C
2
Erec [mJ] = (-5,58E -5´IF + 8,41E - 2´ IF + 6,75)
0
0
Fig. 13
100
200
300 400
IF [A]
500
600
0.0
1.0
2.0
3.0
VF [V]
Typical reverse recovery characteristics
vs forward current
40
Fig. 14
Typical diode forward characteristics,
chip level
400
VCC = 600 V
IF = 300 A
Tvj = 125 °C
Ls = 55 nH
35
350
300
Irr
25
250
20
200
Erec
15
150
10
Irr [A], Qrr [µC]
30
Erec [mJ]
0
0
700
100
Qrr
5
50
0
0
0
Fig. 15
5
10
15
RG [ohm]
20
25
Typical reverse recovery characteristics
vs gate resistor
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1528-02 July 03
page 8 of 9
5SNS 0300U120100
1
n
Zth JH(t) = å Ri(1 - e -t/t i )
Zth(j-h) Diode
0.1
i =1
IGBT
Zth(j-h) IGBT
0.01
DIODE
Zth(j-h) [K / W] IGBT, DIODE
Analytical function for transient thermal
impedance:
0.001
0.001
0.01
0.1
i
1
2
3
4
Ri(K/kW)
117
9
2.4
1.6
ti(ms)
164
14
0.5
0.2
Ri(K/kW)
167
17
10
ti(ms)
139
21
1.2
5
1
t [s]
Fig. 16
Typical thermal impedance vs time
This technical information specifies semiconductor devices but promises no characteristics. No warranty or
guarantee expressed or implied is made regarding delivery, performance or suitability.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone
Fax
Email
Internet
+41 (0)58 586 1419
+41 (0)58 586 1306
[email protected]bb.com
www.abb.com/semiconductors
Doc. No. 5SYA1528-02 July 03