VCE IC = = 1200 V 300 A IGBT Module LoPak5 SPT 5SNS 0300U120100 Doc. No. 5SYA1528-02 July 03 · Low-loss, rugged SPT chip-set · Smooth switching SPT chip-set for good EMC · Low profile compact baseless package for high power cycling capability · Snap-on PCB assembly · Integrated PTC substrate temperature sensor Maximum rated values 1) Parameter Collector-emitter voltage Symbol Conditions VCES VGE = 0 V, Tvj ³ 25 °C min max 1200 Unit V DC collector current IC Th = 60 °C 300 A Peak collector current ICM tp = 1 ms, Th = 60 °C 600 A 20 V 960 W 300 A 600 A 3600 A 10 µs 2500 V 150 °C Gate-emitter voltage Total power dissipation VGES Ptot DC forward current IF Peak forward current IFM Surge current IFSM -20 Th = 25 °C, per switch (IGBT) VR = 0 V, Tvj = 125 °C, tp = 10 ms, half-sinewave IGBT short circuit SOA tpsc VCC = 900 V, VCEM CHIP £ 1200 V VGE £ 15 V, Tvj £ 125 °C Isolation voltage Visol 1 min, f = 50 Hz Junction temperature Tvj Case operating temperature Storage temperature Mounting torques Tc(op) -40 125 °C Tstg -40 125 °C M1 Base-heatsink, M5 screws 2 3 M2 Main terminals, M6 screws 4 5 1) Maximum rated values indicate limits beyond which damage to the device may occur ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Nm 5SNS 0300U120100 IGBT characteristic values Parameter Symbol Conditions min Collector (-emitter) breakdown voltage V(BR)CES 1200 VGE = 0 V, IC = 10 mA, Tvj = 25 °C 2) Collector-emitter saturation voltage VCE sat IC = 300 A, VGE = 15 V 1.9 Tvj = 125 °C 2.1 Tvj = 25 °C ICES VCE = 1200 V, VGE = 0 V Gate leakage current IGES VCE = 0 V, VGE = ±20 V, Tvj = 125 °C VGE(TO) Gate charge Qge Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Turn-on delay time td(on) Rise time Turn-off delay time Fall time tr td(off) tf IC = 300 A, VCE = 600 V, VGE = -15 V .. 15 V VCC = 600 V, IC = 300 A, RG = 3.3 W, VGE = ±15 V, Ls = 55 nH, inductive load nF 1.3 80 Tvj = 25 °C 770 Tvj = 125 °C 750 Tvj = 25 °C 60 Tvj = 125 °C 70 Tvj = 25 °C 19 Tvj = 125 °C 28 Tvj = 25 °C 24 Tvj = 125 °C 34 tpsc ≤ 10 µs, VGE = 15 V, Tvj = 125 °C, VCC = 900 V, VCEM CHIP ≤ 1200 V RCC’+EE’ 3.0 Tvj = 125 °C ISC nC 27 80 Short circuit current Resistance, terminal-chip V Tvj = 25 °C VCC = 600 V, IC = 300 A, VGE = ±15, RG = 3.3 W, Ls = 55 nH, inductive load Ls DC 6.5 180 Eoff Module stray inductance plus to minus 4.5 Tvj = 125 °C Turn-off switching energy mA nA 150 VCC = 600 V, IC = 300 A, VGE = ±15, RG = 3.3 W, Ls = 55 nH, inductive load mA 500 Tvj = 25 °C Eon V -500 4000 Turn-on switching energy Unit V 15 VCE = 25 V, VGE = 0 V, f = 1 MHz, Tvj = 25 °C VCC = 600 V, IC = 300 A, RG = 3.3 W, VGE = ±15 V, Ls = 55 nH, inductive load 2.3 1 Tvj = 125 °C IC = 12 mA, VCE = VGE, Tvj = 25 °C max V Tvj = 25 °C Collector cut-off current Gate-emitter threshold voltage typ ns ns ns ns mJ mJ 1650 A 20 nH Th = 25 °C 0.9 Th = 125 °C 1.0 mΩ 2) Collector emitter saturation voltage is given at chip level ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1528-02 July 03 page 2 of 9 5SNS 0300U120100 Diode characteristic values Parameter Symbol Conditions 3) Continous forward voltage VF Peak reverse recovery current IF = 300 A IRM Recovered charge VCC = 600 V, IF = 300 A, VGE = ±15 V, RG = 3.3 W Ls = 55 nH inductive load QRR Reverse recovery time trr Reverse recovery energy Erec min typ max Tvj = 25 °C 1.9 2.1 Tvj = 125 °C 1.9 Tvj = 25 °C 250 Tvj = 125 °C 340 Tvj = 25 °C 27 Tvj = 125 °C 58 Tvj = 25 °C 120 Tvj = 125 °C 180 Tvj = 25 °C 13 Tvj = 125 °C 27 Unit V A µC ns mJ 3) Forward voltage is given at chip level Thermal properties Parameter Symbol Conditions IGBT thermal resistance junction to heatsink Diode thermal resistance junction to heatsink 4) Rth(j-h)IGBT 4) Temperature sensor Rth(j-h)DIODE PTC min typ max Unit 0.13 K/W 0.19 K/W max Unit 184.5 106.5 34.5 mm Heatsink: flatness < ±50 µm, roughness < 6 µm without ridge Thermal grease: conductivity ³ 0.8 W/mK, thickness 30 µm < t < 50 µm RT = RT0 exp [B (1/T - 1/T0)] RT0 = 1kΩ (±3%), B = -760 K (±2%), T0 = 298 K Mechanical properties Parameter Symbol Conditions Dimensions L W x x H Typical , see outline drawing min typ x Clearance distance DC according to IEC 60664-1 Term. to base: and EN 50124-1 Term. to term: Surface creepage distance DSC according to IEC 60664-1 Term. to base: 9.5 and EN 50124-1 Term. to term: 12.5 9.5 mm 11 Weight Mounting x mm 460 4) gr PCB mounting Hole for selftapping screw: 2.5 mm diameter, 6.0 mm deep Control terminal Spring pins, pitch of pins = 4 mm, PCB thickness = 1.6 mm 4) For detailed mounting instructions refer to ABB Document No. 5SYA 2017 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1528-02 July 03 page 3 of 9 5SNS 0300U120100 Electrical configuration Outline drawing For mounting instructions refer to ABB document No. 5SYA 2017 This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, chap. IX. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1528-02 July 03 page 4 of 9 5SNS 0300U120100 600 600 17V 15V 15V 500 17V 500 13V 13V 11V 11V 400 9V IC [A] IC [A] 400 300 9V 300 200 200 100 100 Tvj = 25 °C Tvj = 125 °C 0 0 0 1 2 3 4 5 0 1 2 VCE [V] Fig. 1 3 4 5 VCE [V] Typical output characteristics, chip level Fig. 2 Typical output characteristics, chip level 2.5 600 VGE = ±15 V, RG = 3.3 ohm Tvj = 150 °C VCE = 20 V 500 2 400 IC pulse / IC IC [A] 1.5 300 1 200 25 °C 125 °C 0.5 100 Chip Power terminals 0 0 0 Fig. 3 1 2 3 4 5 6 7 VGE [V] 8 9 10 11 12 Typical transfer characteristics, chip level 0 Fig. 4 200 400 600 800 VCE [V] 1000 1200 1400 Turn-off safe operating area (RBSOA) ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1528-02 July 03 page 5 of 9 5SNS 0300U120100 0.10 0.10 VCC = 600 V RG = 3.3 ohm VGE = ±15 V Tvj = 125 °C Ls = 55 nH 0.09 0.08 0.07 0.07 0.06 0.06 Eon, Eoff [J] Eon, Eoff [J] 0.08 0.05 Eoff 0.04 Eon 0.03 VCC = 600 V IC = 300 A VGE = ±15 V Tvj = 125 °C Ls = 55 nH 0.09 Eon 0.05 Eoff 0.04 0.03 0.02 0.02 0.01 0.01 2 ESW [ mJ ] = (1,74E - 4 ´ I C + 1,25E - 1´ I C + 9,38) 0.00 0.00 0 Fig. 5 100 200 300 400 IC [A] 500 600 700 Typical switching energies per pulse vs collector current 0 Fig. 6 5 10 15 RG [ohm] 20 25 Typical switching energies per pulse vs gate resistor 10.00 1.00 td(off) td(off) td(on), tr, td(off), tf [µs] td(on), tr, td(off), tf [µs] td(on) tr 0.10 tf 1.00 td(on) tr 0.10 tf VCC = 600 V RG = 3.3 ohm VGE = ±15 V Tvj = 125 °C Ls = 55 nH 0.01 0.01 0 Fig. 7 VCC = 600 V IC = 300 A VGE = ±15 V Tvj = 125 °C Ls = 55 nH 100 200 300 400 IC [ A ] Typical switching times vs collector current 500 600 700 0 Fig. 8 5 10 15 RG [ohm] 20 25 Typical switching times vs gate resistor ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1528-02 July 03 page 6 of 9 5SNS 0300U120100 100 20 VGE = 0 V fOSC = 1 MHz VOSC = 50 mV VCC = 600 V Cies 15 VGE [V] C [nF] VCC = 800 V 10 10 Coes 5 Cres IC = 300 A Tvj = 25 °C 1 0 0 5 10 15 20 25 30 35 0 1 VCE [V] Fig. 9 Typical capacitances vs collector-emitter voltage Fig. 10 400 2 Qg [µC] 3 Typical gate charge characteristics 2000 VGE ³ 15 V Tvj = 150 °C 1800 1600 300 1400 RT [ohm] IC, IF [A] 1200 200 1000 800 600 100 RT = RT 0e B (1 T -1 T0 ) 400 RT 0 = 1kW ( ±3 %), B = -760 K ( ±2%), T0 = 298 K 200 IGBT Diode 0 0 0 Fig. 11 20 40 60 80 100 Th [°C] 120 Rated current vs temperature 140 0 160 20 40 60 80 100 120 140 T [°C] Fig. 12 PTC temperature sensor ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1528-02 July 03 page 7 of 9 5SNS 0300U120100 40 Irr 30 700 300 600 250 500 VCC = 600 V RG = 3.3 ohm Tvj = 125 °C Ls = 55 nH 20 200 IF [A] Erec [mJ] 350 25 °C Erec 25 800 Irr [A], Qrr [µC] 35 400 400 300 15 150 10 100 200 50 100 Qrr 5 125 °C 2 Erec [mJ] = (-5,58E -5´IF + 8,41E - 2´ IF + 6,75) 0 0 Fig. 13 100 200 300 400 IF [A] 500 600 0.0 1.0 2.0 3.0 VF [V] Typical reverse recovery characteristics vs forward current 40 Fig. 14 Typical diode forward characteristics, chip level 400 VCC = 600 V IF = 300 A Tvj = 125 °C Ls = 55 nH 35 350 300 Irr 25 250 20 200 Erec 15 150 10 Irr [A], Qrr [µC] 30 Erec [mJ] 0 0 700 100 Qrr 5 50 0 0 0 Fig. 15 5 10 15 RG [ohm] 20 25 Typical reverse recovery characteristics vs gate resistor ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1528-02 July 03 page 8 of 9 5SNS 0300U120100 1 n Zth JH(t) = å Ri(1 - e -t/t i ) Zth(j-h) Diode 0.1 i =1 IGBT Zth(j-h) IGBT 0.01 DIODE Zth(j-h) [K / W] IGBT, DIODE Analytical function for transient thermal impedance: 0.001 0.001 0.01 0.1 i 1 2 3 4 Ri(K/kW) 117 9 2.4 1.6 ti(ms) 164 14 0.5 0.2 Ri(K/kW) 167 17 10 ti(ms) 139 21 1.2 5 1 t [s] Fig. 16 Typical thermal impedance vs time This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 [email protected] www.abb.com/semiconductors Doc. No. 5SYA1528-02 July 03