ABB 5STB24Q2800

VSM
=
2800 V
ITAVM
=
2630 A
ITRMS
=
4130 A
ITSM
=
43000 A
VT0
=
0.85 V
rT
=
0.160 mΩ
Ω
Bi-Directional Control Thyristor
5STB 24Q2800
Doc. No. 5SYA1053-01 Sep. 01
• Two thyristors integrated into one wafer
• Patented free-floating silicon technology
• Designed for traction, energy and industrial applications
• Optimum power handling capability
• Interdigitated amplifying gate.
The electrical and thermal data are valid for one thyristor half of the device.
Blocking
Part Number
5STB 24Q2800
5STB 24Q2600
5STB 24Q2200
Conditions
VSM
3000 V
2800 V
2400 V
f = 5 Hz, tp = 10ms
VRM
2800 V
2600 V
2200 V
f = 50 Hz,tp = 10ms
ISM
≤ 400 mA
VSM
IRM
≤ 400 mA
VRM
dV/dtcrit
1000 V/µs
@ Exp. to 0.67xVSM
VRM is equal to VSM up to Tj = 110°C
Mechanical data
FM
a
Mounting force
nom.
90 kN
min.
81 kN
max.
108 kN
Acceleration
Device unclamped
50 m/s2
Device clamped
100 m/s2
m
Weight
2.1 kg
DS
Surface creepage distance
36 mm
Da
Air strike distance
15 mm
ABB Semiconductors AG reserves the right to change specifications without notice.
Tj = 125°C
5STB 24Q2800
On-state
ITAVM
ITRMS
Max. average on-state
t
Max. RMS on-state current
ITSM
Max. peak non-repetitive
43000 A
tp
=
10 ms Tj = 125°C
surge current
46000 A
tp
=
8.3 ms After surge:
9245 kA2s
tp
=
10 ms VD = VR = 0V
8781 kA2s
tp
=
8.3 ms
I2t
2630 A
Half sine wave, TC = 70°C
4130 A
Limiting load integral
VT
On-state voltage
1.35 V
IT
=
3000 A
VT0
Threshold voltage
0.85 V
IT
=
1500 - 4500 A
rT
Slope resistance
0.160 mΩ
IH
Holding current
50-250 mA
Tj
= 25°C
25-150 mA
Tj
= 125°C
100-500 mA
Tj
= 25°C
50-300 mA
Tj
= 125°C
IL
Latching current
Tj = 125°C
Switching
di/dtcrit Critical rate of rise of on-state
current
250 A/µs
Cont. f = 50 Hz VD ≤ 0.67⋅VDRM , Tj = 125°C
500 A/µs
60 sec.
f = 50Hz
ITRM = 3000 A
IFG = 2 A, tr = 0.5 µs
IFG = 2 A, tr = 0.5 µs
td
Delay time
≤
3.0 µs
VD = 0.4⋅VDRM
tq
Turn-off time
≤
400 µs
VD ≤ 0.67⋅VDRM ITRM = 3000 A, Tj = 125°C
dvD/dt = 20V/µs VR > 200 V, diT/dt = -1.5 A/µs
Qrr
Recovery charge
min
1100 µAs
max
2000 µAs
Triggering
VGT
Gate trigger voltage
≤
2.6 V
Tj = 25°C
IGT
Gate trigger current
≤
400 mA
Tj = 25°C
VGD
Gate non-trigger voltage
≥
0.3 V
VD = 0.4⋅VRM
Tj = 125°C
IGD
Gate non-trigger current
≥
10 mA
VD = 0.4⋅VRM
Tj = 125°C
VFGM
Peak forward gate voltage
12 V
IFGM
Peak forward gate current
10 A
VRGM
Peak reverse gate voltage
10 V
PG
Maximum gate power loss
3W
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1053-01 Sep. 01
page 2 of 5
5STB 24Q2800
Thermal
Tj
Operating junction temperature range
-40…125 °C
Tstg
Storage temperature range
-40…150 °C
RthJC
Thermal resistance
20 K/kW
Anode side cooled
junction to case
20 K/kW
Cathode side cooled
10 K/kW
Double side cooled
Thermal resistance case to
4 K/kW
Single side cooled
heat sink
2 K/kW
Double side cooled
Analytical function for transient thermal
impedance:
n
ZthJC(t) = å Ri(1 - e
ZthJC [K/kW]
15
180° sine:
add 1 K/kW
180° rectangular: add 1 K/kW
120° rectangular: add 1 K/kW
60° rectangular: add 2 K/kW
- t/τ
i
)
i =1
10
5
i
1
2
3
4
Ri(K/kW)
6.5
1.47
1.31
0.71
τi(s)
0.5205
0.1075
0.0194
0.0073
Fm = 81..108 kN
Double-side cooling
0
0.001
BQ1
RthCH
0.010
0.100
1.000
10.000
t [s]
Fig. 1 Transient thermal impedance junction to case.
Fig. 2 On-state characteristics.
Fig. 3 On-state characteristics.
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1053-01 Sep. 01
page 3 of 5
5STB 24Q2800
Tcase (°C)
130
Double-sided cooling
125
120
DC
180° rectangular
180° sine
120° rectangular
115
110
105
100
95
90
85
5STB 24Q2800
80
75
70
0
500
1000 1500 2000 2500 3000 3500 4000
ITAV (A)
Fig. 4 On-state power dissipation vs. mean onstate current. Turn - on losses excluded.
Fig. 5 Max. permissible case temperature vs.
mean on-state current.
Fig. 6 Surge on-state current vs. pulse length.
Half-sine wave.
Fig. 7 Surge on-state current vs. number of
pulses. Half-sine wave, 10 ms, 50Hz.
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1053-01 Sep. 01
page 4 of 5
5STB 24Q2800
Fig. 8 Gate trigger characteristics.
Fig. 9 Max. peak gate power loss.
Fig. 10 Recovery charge vs. decay rate of onstate current.
Fig. 11 Peak reverse recovery current vs. decay
rate of on-state current.
ABB Semiconductors AG reserves the right to change specifications without notice.
ABB Semiconductors AG
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone
Fax
Email
Internet
+41 (0)62 888 6419
+41 (0)62 888 6306
abbsem@ch.abb.com
www.abbsem.com
Doc. No. 5SYA1053-01 Sep. 01