VSM = 2800 V ITAVM = 2630 A ITRMS = 4130 A ITSM = 43000 A VT0 = 0.85 V rT = 0.160 mΩ Ω Bi-Directional Control Thyristor 5STB 24Q2800 Doc. No. 5SYA1053-01 Sep. 01 • Two thyristors integrated into one wafer • Patented free-floating silicon technology • Designed for traction, energy and industrial applications • Optimum power handling capability • Interdigitated amplifying gate. The electrical and thermal data are valid for one thyristor half of the device. Blocking Part Number 5STB 24Q2800 5STB 24Q2600 5STB 24Q2200 Conditions VSM 3000 V 2800 V 2400 V f = 5 Hz, tp = 10ms VRM 2800 V 2600 V 2200 V f = 50 Hz,tp = 10ms ISM ≤ 400 mA VSM IRM ≤ 400 mA VRM dV/dtcrit 1000 V/µs @ Exp. to 0.67xVSM VRM is equal to VSM up to Tj = 110°C Mechanical data FM a Mounting force nom. 90 kN min. 81 kN max. 108 kN Acceleration Device unclamped 50 m/s2 Device clamped 100 m/s2 m Weight 2.1 kg DS Surface creepage distance 36 mm Da Air strike distance 15 mm ABB Semiconductors AG reserves the right to change specifications without notice. Tj = 125°C 5STB 24Q2800 On-state ITAVM ITRMS Max. average on-state t Max. RMS on-state current ITSM Max. peak non-repetitive 43000 A tp = 10 ms Tj = 125°C surge current 46000 A tp = 8.3 ms After surge: 9245 kA2s tp = 10 ms VD = VR = 0V 8781 kA2s tp = 8.3 ms I2t 2630 A Half sine wave, TC = 70°C 4130 A Limiting load integral VT On-state voltage 1.35 V IT = 3000 A VT0 Threshold voltage 0.85 V IT = 1500 - 4500 A rT Slope resistance 0.160 mΩ IH Holding current 50-250 mA Tj = 25°C 25-150 mA Tj = 125°C 100-500 mA Tj = 25°C 50-300 mA Tj = 125°C IL Latching current Tj = 125°C Switching di/dtcrit Critical rate of rise of on-state current 250 A/µs Cont. f = 50 Hz VD ≤ 0.67⋅VDRM , Tj = 125°C 500 A/µs 60 sec. f = 50Hz ITRM = 3000 A IFG = 2 A, tr = 0.5 µs IFG = 2 A, tr = 0.5 µs td Delay time ≤ 3.0 µs VD = 0.4⋅VDRM tq Turn-off time ≤ 400 µs VD ≤ 0.67⋅VDRM ITRM = 3000 A, Tj = 125°C dvD/dt = 20V/µs VR > 200 V, diT/dt = -1.5 A/µs Qrr Recovery charge min 1100 µAs max 2000 µAs Triggering VGT Gate trigger voltage ≤ 2.6 V Tj = 25°C IGT Gate trigger current ≤ 400 mA Tj = 25°C VGD Gate non-trigger voltage ≥ 0.3 V VD = 0.4⋅VRM Tj = 125°C IGD Gate non-trigger current ≥ 10 mA VD = 0.4⋅VRM Tj = 125°C VFGM Peak forward gate voltage 12 V IFGM Peak forward gate current 10 A VRGM Peak reverse gate voltage 10 V PG Maximum gate power loss 3W ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1053-01 Sep. 01 page 2 of 5 5STB 24Q2800 Thermal Tj Operating junction temperature range -40…125 °C Tstg Storage temperature range -40…150 °C RthJC Thermal resistance 20 K/kW Anode side cooled junction to case 20 K/kW Cathode side cooled 10 K/kW Double side cooled Thermal resistance case to 4 K/kW Single side cooled heat sink 2 K/kW Double side cooled Analytical function for transient thermal impedance: n ZthJC(t) = å Ri(1 - e ZthJC [K/kW] 15 180° sine: add 1 K/kW 180° rectangular: add 1 K/kW 120° rectangular: add 1 K/kW 60° rectangular: add 2 K/kW - t/τ i ) i =1 10 5 i 1 2 3 4 Ri(K/kW) 6.5 1.47 1.31 0.71 τi(s) 0.5205 0.1075 0.0194 0.0073 Fm = 81..108 kN Double-side cooling 0 0.001 BQ1 RthCH 0.010 0.100 1.000 10.000 t [s] Fig. 1 Transient thermal impedance junction to case. Fig. 2 On-state characteristics. Fig. 3 On-state characteristics. ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1053-01 Sep. 01 page 3 of 5 5STB 24Q2800 Tcase (°C) 130 Double-sided cooling 125 120 DC 180° rectangular 180° sine 120° rectangular 115 110 105 100 95 90 85 5STB 24Q2800 80 75 70 0 500 1000 1500 2000 2500 3000 3500 4000 ITAV (A) Fig. 4 On-state power dissipation vs. mean onstate current. Turn - on losses excluded. Fig. 5 Max. permissible case temperature vs. mean on-state current. Fig. 6 Surge on-state current vs. pulse length. Half-sine wave. Fig. 7 Surge on-state current vs. number of pulses. Half-sine wave, 10 ms, 50Hz. ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1053-01 Sep. 01 page 4 of 5 5STB 24Q2800 Fig. 8 Gate trigger characteristics. Fig. 9 Max. peak gate power loss. Fig. 10 Recovery charge vs. decay rate of onstate current. Fig. 11 Peak reverse recovery current vs. decay rate of on-state current. ABB Semiconductors AG reserves the right to change specifications without notice. ABB Semiconductors AG Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)62 888 6419 +41 (0)62 888 6306 [email protected] www.abbsem.com Doc. No. 5SYA1053-01 Sep. 01