ABB 5STP20F1601

VDRM
IT(AV)M
IT(RMS)
ITSM
V(T0)
rT
=
=
=
=
=
=
1600
1901
2987
27.3×103
0.948
0.152
V
A
A
A
V
mΩ
Phase Control Thyristor
5STP 20F1601
Doc. No. 5SYA1061-01 March 05
•
Low on-state and switching losses
•
Designed for traction, energy and industrial applications
•
Optimum power handling capability
Blocking
Maximum rated values
1)
Symbol
Conditions
VDRM, VRRM
f = 50 Hz, tp = 10 ms
dV/dtcrit
Exp. to 1070 V, Tvj = 125°C
5STP 20F1601
5STP 20F1401
5STP 20F1201
1600 V
1400 V
1200 V
1000 V/µs
Characteristic values
Parameter
Symbol Conditions
min
typ
max
Unit
Forward leakage current
IDRM
VDRM, Tvj = 125°C
150
mA
Reverse leakage current
IRRM
VRRM, Tvj = 125°C
150
mA
Mechanical data
Maximum rated values
1)
Parameter
Symbol Conditions
Mounting force
FM
Acceleration
a
Acceleration
a
min
typ
20
22
max
Unit
24
kN
Device unclamped
50
m/s
2
Device clamped
100
m/s
2
Characteristic values
Parameter
Symbol Conditions
Weight
m
Surface creepage distance
DS
min
typ
max
0.48
25
Air strike distance
Da
13
1) Maximum rated values indicate limits beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Unit
kg
mm
mm
5STP 20F1601
On-state
Maximum rated values
1)
Parameter
Symbol Conditions
Average on-state current
IT(AV)M
RMS on-state current
IT(RMS)
Peak non-repetitive surge
current
ITSM
Limiting load integral
I2t
Peak non-repetitive surge
current
ITSM
Limiting load integral
I2t
min
typ
Half sine wave, Tc = 70 °C, f = 50 Hz
max
Unit
1901
A
2987
tp = 10 ms, Tvj = 125 °C,
A
3
A
6
A2s
3
A
6
A2s
27.3×10
VD = VR = 0 V
3.73×10
29.2×10
tp = 8.3 ms, Tvj = 125 °C,
VD = VR = 0 V
3.54×10
Characteristic values
Parameter
Symbol Conditions
On-state voltage
VT
IT = 2000 A, Tvj = 125 °C
1.25
V
Threshold voltage
V(T0)
IT = 2000 A - 8000 A, Tvj= 125 °C
0.948
V
Slope resistance
rT
0.152
mΩ
Holding current
IH
Latching current
Switching
Maximum rated values
IL
min
typ
max
Unit
Tvj = 25 °C
170
mA
Tvj = 125 °C
90
mA
Tvj = 25 °C
450
mA
Tvj = 125 °C
350
mA
1)
Parameter
Symbol Conditions
Critical rate of rise of onstate current
di/dtcrit
Critical rate of rise of onstate current
di/dtcrit
Circuit-commutated turn-off tq
time
min
Tvj = 125 °C,
Cont.
IT = IT(AV),
f = 50 Hz
VD ≤ 1070 V,
Cont.
IFG = 2 A, tr = 0.3 µs
f = 1 Hz
Tvj = 125°C, ITRM = 2000 A,
VR = 200 V, diT/dt = -12.5 A/µs,
VD ≤ 0.67⋅VDRM, dvD/dt = 50V/µs
typ
max
Unit
200
A/µs
1000
A/µs
150
µs
Characteristic values
Parameter
Symbol Conditions
Recovery charge
Qrr
Tvj = 125°C, ITRM = 2000 A,
VR = 200 V,
diT/dt = -12.5 A/µs
Gate turn-on delay time
tgd
VD = 0.4⋅VRM, IFG = 2 A,
tr = 0.3 µs, Tvj = 25 °C
min
typ
max
Unit
2200
µAs
2
µs
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1061-01 March 05
page 2 of 6
5STP 20F1601
Triggering
Maximum rated values
1)
Parameter
Symbol Conditions
Peak forward gate voltage
VFGM
min
typ
max
12
Unit
V
Peak forward gate current
IFGM
10
A
Peak reverse gate voltage
VRGM
10
V
Mean forward gate power
PG(AV)
3
W
Characteristic values
Parameter
Symbol Conditions
Gate-trigger voltage
VGT
max
Unit
Tvj = -40 °C
min
4
V
Tvj = 25 °C
3
Tvj = 125 °C
Gate-trigger current
IGT
typ
0.25
2
Tvj = -40 °C
500
Tvj = 25 °C
250
Tvj = 125 °C
10
mA
150
Thermal
Maximum rated values
1)
Parameter
Symbol Conditions
min
Operating junction
temperature range
Tvj
max
Unit
-40
125
°C
-40
125
°C
max
Unit
Double-side cooled
Fm = 20...24 kN
16
K/kW
Rth(j-c)A
Anode-side cooled
Fm = 20...24 kN
25
K/kW
Rth(j-c)C
Cathode-side cooled
Fm = 20...24 kN
45
K/kW
Double-side cooled
Fm = 20...24 kN
4
K/kW
Single-side cooled
Fm = 20...24 kN
8
K/kW
Storage temperature range Tstg
typ
Characteristic values
Parameter
Symbol Conditions
Thermal resistance junction Rth(j-c)
to case
Thermal resistance case to Rth(c-h)
heatsink
Rth(c-h)
min
typ
Analytical function for transient thermal
impedance:
n
Zth(j-c) (t) = ∑ R th i (1 - e-t/τ i )
i =1
i
1
2
3
4
Rth i(K/kW)
5.500
7.240
2.000
1.340
τi(s)
0.4653
0.1533
0.0375
0.0034
Fig. 1 Transient thermal impedance junction-to case.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1061-01 March 05
page 3 of 6
25°C
125°C
10000
9000
45
5,5
2
∫i dt
I TSM
40
5
35
4,5
30
4
25
3,5
20
3
i 2dt (106 A2s)
11000
ITSM ( kA )
IT ( A )
5STP 20F1601
8000
7000
6000
5000
4000
3000
2000
1000
0
0
0,5
1
1,5
2
15
2,5
3
VT ( V )
Fig. 2 Max. on-state voltage characteristics
VG ( V )
6
DC = P GAVm
10
t ( ms )
14
V FGM
12
500µs
10
5
-40 °C
1ms
8
4
2,5
100
Fig. 3 Surge forward current vs. pulse length. Half
sine wave, single pulse, VR = 0 V
VG ( V )
7
1
+25 °C
+125 °C
4
IGTmin
2
IFGM
6
3
10ms
DC = P GAVm
2
1
V GTmin
0
0
0
0,5
Fig. 4 Gate trigger characteristics
1
0
2
4
6
8
IG ( A )
10
12
IG ( A )
Fig. 5 Gate trigger characteristics
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1061-01 March 05
page 4 of 6
ψ = 30° 60° 90° 120° 180°
3500
DC
3000
3500
ψ = 30° 60° 90° 120° 180°
270°
3000
DC
PT ( W )
PT ( W )
5STP 20F1601
2500
2500
2000
2000
1500
1500
1000
1000
500
500
0
0
0
400
800
1200
1600
2000
2400
0
400
800
1200
1600
I TAV ( A )
130
120
Fig. 7 Forward power loss vs. average forward
current, square waveform, f = 50 Hz, T = 1/f
130
120
110
110
100
100
90
90
80
80
DC
70
2400
I TAV ( A )
TC ( °C )
TC ( °C )
Fig. 6 Forward power loss vs. average forward
current, sine waveform, f = 50 Hz, T = 1/f
2000
DC
70
270°
ψ = 30° 60°
60
0
400
800
1200
90° 120° 180°
1600
2000
2400
ψ = 30° 60°90° 120° 180°
60
0
400
800
1200
1600
I TAV ( A )
Fig. 8 Max. case temperature vs.average forward
current, sine waveform, f = 50Hz, T = 1/f
2000
2400
I TAV ( A )
Fig. 9 Max. case temperature vs.average forward
current, square waveform, f = 50Hz, T = 1/f
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1061-01 March 05
page 5 of 6
5STP 20F1601
RED
WHITE
Fig. 10 Device Outline Drawing.
Related application notes:
Doc. Nr
Titel
5SYA2020
Design of RC-Snubber for Phase Control Applications
5SYA2034
Gate-drive Recommendations for PCT's
5SYA 2036
Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors
Please refer to http://www.abb.com/semiconductors for actual versions.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone
Fax
Email
Internet
+41 (0)58 586 1419
+41 (0)58 586 1306
abbsem@ch.abb.com
www.abb.com/semiconductors
Doc. No. 5SYA1061-01 March 05