VDRM IT(AV)M IT(RMS) ITSM V(T0) rT = = = = = = 1800 6100 9600 94×103 0.9 0.05 V A A A V mΩ Ω Phase Control Thyristor 5STP 50Q1800 Doc. No. 5SYA1070-01 Okt. 03 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications • Optimum power handling capability • Interdigitated amplifying gate Blocking Maximum rated values 1) Symbol Conditions 5STP 50Q1800 -- -- VDRM, VRRM f = 50 Hz, tp = 10 ms 1800 V -- -- VRSM tp = 5 ms, single pulse 2000 V -- -- dV/dtcrit Exp. to 0.67 x VDRM, Tvj = 125°C 1000 V/µs Characteristic values Parameter Symbol Conditions Forward leakage current IDRM VDRM, Tvj = 125°C min typ max 300 Unit mA Reverse leakage current IRRM VRRM, Tvj = 125°C 300 mA Mechanical data Maximum rated values 1) Parameter Symbol Conditions Mounting force FM Acceleration a Acceleration a min typ 81 90 max Unit 108 kN Device unclamped 50 m/s 2 Device clamped 100 m/s 2 Characteristic values Parameter Symbol Conditions Weight m Housing thickness H Surface creepage distance DS FM = 90 kN, Ta = 25 °C min typ 25.5 36 Air strike distance Da 15 1) Maximum rated values indicate limits beyond which damage to the device may occur ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. max Unit 2.1 kg 26.5 mm mm mm 5STP 50Q1800 On-state Maximum rated values 1) Parameter Symbol Conditions Average on-state current IT(AV)M RMS on-state current IT(RMS) Peak non-repetitive surge current ITSM Limiting load integral I2t Peak non-repetitive surge current ITSM Limiting load integral I2t min typ Half sine wave, Tc = 70°C max Unit 6100 A 9600 A 3 tp = 10 ms, Tvj = 125 °C, 94×10 VD = VR = 0 V A 6 41.28×10 3 tp = 8.3 ms, Tvj = 125 °C, 100×10 VD = VR = 0 V A2s A 6 43.37×10 A2s Characteristic values Parameter Symbol Conditions On-state voltage VT IT = 3000 A, Tvj = 125 °C 1.04 V Threshold voltage V(T0) IT = 4000 A - 18000 A, Tvj= 125 °C 0.9 V Slope resistance rT 0.05 mΩ Holding current IH Tvj = 25 °C 100 mA Tvj = 125 °C 75 mA Tvj = 25 °C 500 mA Tvj = 125 °C 350 mA Latching current Switching Maximum rated values IL min typ max Unit 1) Parameter Symbol Conditions Critical rate of rise of onstate current di/dtcrit Critical rate of rise of onstate current di/dtcrit Circuit-commutated turn-off tq time min Tvj = 125 °C, Cont. ITRM = 3000 A, f = 50 Hz VD ≤ 0.67 VDRM, Cont. IFG = 2 A, tr = 0.5 µs f = 1Hz Tvj = 125°C, ITRM = 3000 A, VR = 200 V, diT/dt = -20 A/µs, VD ≤ 0.67⋅VDRM, dvD/dt = 20V/µs typ max Unit 250 A/µs 1000 A/µs 500 µs Characteristic values Parameter Symbol Conditions Recovery charge Qrr Tvj = 125°C, ITRM = 2000 A, VR = 200 V, diT/dt = -1.5 A/µs Gate turn-on delay time tgd VD = 0.4⋅VRM, IFG = 2 A, tr = 0.5 µs, Tvj = 25 °C min typ max Unit 3000 µAs 3 µs ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1070-01 Okt. 03 page 2 of 6 5STP 50Q1800 Triggering Maximum rated values 1) Parameter Symbol Conditions min typ max Unit Peak forward gate voltage VFGM 12 V Peak forward gate current IFGM 10 A Peak reverse gate voltage VRGM 10 V Average gate power loss PG(AV) see Fig. 9 Characteristic values Parameter Symbol Conditions Gate-trigger voltage VGT Tvj = 25 °C 2.6 V Gate-trigger current IGT Tvj = 25 °C 400 mA Gate non-trigger voltage VGD VD = 0.4 x VDRM, Tvj = 125 °C 0.3 V Gate non-trigger current IGD VD = 0.4 x VDRM, Tvj = 125°C 10 mA Thermal Maximum rated values min typ max Unit 1) Parameter Symbol Conditions Operating junction temperature range Tvj min Storage temperature range Tstg typ -40 max Unit 125 °C 140 °C Characteristic values Parameter Symbol Conditions max Unit Double-side cooled 5 K/kW Rth(j-c)A Anode-side cooled 10 K/kW Rth(j-c)C Cathode-side cooled 10 K/kW Double-side cooled 1 K/kW Single-side cooled 2 K/kW Thermal resistance junction Rth(j-c) to case Thermal resistance case to Rth(c-h) heatsink Rth(c-h) min typ Analytical function for transient thermal impedance: n Zth(j - c)(t) = å Ri(1 - e- t/τ i ) i =1 i 1 2 3 4 Ri(K/kW) 3.359 0.936 0.481 0.224 τi(s) 0.4069 0.0854 0.0118 0.0030 Fig. 1 Transient thermal impedance junction-to case. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1070-01 Okt. 03 page 3 of 6 5STP 50Q1800 Max. on-state characteristic model: Max. on-state characteristic model: VT25 = ATvj + BTvj ⋅ IT + CTvj ⋅ ln(IT +1) + DTvj ⋅ IT VT125 = ATvj + BTvj ⋅ IT + CTvj ⋅ ln(IT +1) + DTvj ⋅ IT Valid for IT = 200 – 100000 A A25 B25 C25 D25 -3 -6 -3 -3 932.00×10 25.28×10 -14.74×10 3.72×10 Valid for IT = 200 – 100000 A A125 -3 334.70×10 B125 -6 29.36×10 C125 -3 61.20×10 D125 -3 2.31×10 Fig. 2 On-state characteristics. Tj=125°C, 10ms half sine Fig. 3 Max. on-state voltage characteristics Fig. 4 On-state power dissipation vs. mean on-state current. Turn - on losses excluded. Fig. 5 Max. permissible case temperature vs. mean on-state current. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1070-01 Okt. 03 page 4 of 6 5STP 50Q1800 Fig. 6 Surge on-state current vs. pulse length. Halfsine wave. IG (t) 100 % 90 % IGM IGM IGon diG/dt tr tp(IGM) Fig. 7 Surge on-state current vs. number of pulses. Half-sine wave, 10 ms, 50Hz. ≈ 2..5 A ≥ 1.5 IGT ≥ 2 A/µs ≤ 1 µs ≈ 5...20 µs diG/dt IGon 10 % tr t tp (IGM) tp (IGon) Fig. 8 Recommended gate current waveform. Fig. 9 Max. peak gate power loss. Fig. 10 Recovery charge vs. decay rate of on-state current. Fig. 11 Peak reverse recovery current vs. decay rate of on-state current. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1070-01 Okt. 03 page 5 of 6 5STP 50Q1800 C C Fig. 12 Device Outline Drawing. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 [email protected] www.abb.com/semiconductors Doc. No. 5SYA1070-01 Okt. 03