ACCUTEK AK5328192WP-60

Accutek
Microcircuit
Corporation
AK5328192W
8,388,608 by 32 Bit CMOS
Dynamic Random Access Memory
DESCRIPTION
The Accutek AK5328192W high density memory module is a
CMOS dynamic RAM organized in 8192K x 32 bit words. The module consists of sixteen standard 4 Meg x 4 DRAMs in plastic SOJ
packages. The assembly has eight drams mounted on each side of
a printed circuit board in a 72 pad leadless SIM configuration.
+
This configuration allows socket-mounting of large quantities of
memory in applications where high density and ease of inserting additional memory are important.
The operation of the AK5328192W is identical to sixteen 4M x 4
Drams. There are four CAS lines and four RAS lines. On each bank
of 4M x 32, independent byte control is accomplished by four CAS
lines. Each separate CAS line controls two 4M x 4 Drams to form an
8 bit byte. Two banks of 32 bits are controlled by the two pairs of
RAS lines. A sixteen bit data path can be produced by connecting
DQ0 to DQ16, DQ1 to DQ17, etc. and alternately strobing RAS0 with
RAS1 and RAS2 with RAS3.
FEATURES
·
·
·
·
·
8,388,608 x 32 bit organization
72 pad Single In-Line Module
Multiple CAS and RAS lines allow x16 or x32 bit widths
CAS-before-RAS, RAS-only or hidden refresh
Power
5.32 Watt Max Active (60nS)
4.48 Watt Max Active (70 nS)
88 mW Max Standby
· Operating free air temperature 0oC to 70oC
· Single 5 Volt Power Supply
+
1
·
·
·
·
·
AK5328192WP-60
8 Meg x 32 CMOS Dynamic RAM, SIM, Page Mode, Commercial 60
nSEC Access Time
PIN ASSIGNMENT
A0 - A10
Address Inputs
DQ0 - DQ31
Data In/Data Out
CAS0 - CAS3
Column Address Strobe
RAS0 - RAS3
Row Address Strobe
WE
Write Enable
OE
Output Enable
PD1 - PD4
Presence Detect
Vcc
5v Supply
Vss
Ground
NC
No Connect
PIN #
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
SYMBOL
Vss
DQ0
DQ16
DQ1
DQ17
DQ2
DQ18
DQ3
DQ19
Vcc
NC
A0
A1
A2
A3
A4
A5
A6
PIN #
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
Presence Detect Leadless SIM: AK5328192W
Leaded ZIP: AK5328192Z
PD1
PD2
PD3
PD4
2048 Refresh Cycles, 32 mSEC
4096 Refresh Cycles, 64 mSEC available for all module sizes
Available in Fast Page Mode and EDO
Available in leadless (W) or leaded Zip (Z) versions
Downward compatible with AK5324096, AK5322048,
AK5321024, AK532512 andAK532256
EXAMPLES
PIN NOMENCLATURE
MODULE OPTIONS
72
-60
NC
Vss
NC
NC
-70
NC
Vss
Vss
NC
SYMBOL
A10
DQ4
DQ20
DQ5
DQ21
DQ6
DQ22
DQ7
DQ23
A7
NC
Vcc
A8
A9
RAS3
RAS2
NC
NC
PIN #
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
SYMBOL
NC
NC
Vss
CAS0
CAS2
CAS3
CAS1
RAS0
RAS1
NC
WE
NC
DQ8
DQ24
DQ9
DQ25
DQ10
DQ26
PIN #
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
SYMBOL
DQ11
DQ27
DQ12
DQ28
Vcc
DQ29
DQ13
DQ30
DQ14
DQ31
DQ15
NC
PD1
PD2
PD3
PD4
NC
Vss
A0 - A10
RAS
DQ0 - DQ3 CAS
WE
OE
A0 - A10
RAS
CAS DQ0 - DQ3
WE
OE
WE
DQ28 - DQ31
CAS3
DQ20 - DQ23
DQ24 - DQ27
A0 - A10
RAS
CAS
WE
OE
DQ0 - DQ3
A0 - A10
RAS
CAS DQ0 - DQ3
WE
OE
A0 - A10
RAS
DQ0 - DQ3 CAS
WE
OE
A0 - A10
RAS
CAS DQ0 - DQ3
WE
OE
RAS2
CAS2
CAS1
DQ16 - DQ19
A0 - A10
RAS
CAS
WE
OE
DQ0 - DQ3
A0 - A10
RAS
CAS DQ0 - DQ3
WE
OE
A0 - A10
RAS
DQ0 - DQ3 CAS
WE
OE
DQ8 - DQ11
DQ12 - DQ15
A0 - A10
RAS
CAS
DQ0 - DQ3
WE
OE
A0 - A10
RAS
CAS
WE
OE
DQ0 - DQ3
A0 - A10
RAS
CAS
DQ0 - DQ3
WE
OE
A0 - A10
RAS
DQ0 - DQ3 CAS
WE
OE
DQ4 - DQ7
A0 - A10
RAS
CAS
DQ0 - DQ3
WE
OE
OE
RAS0
CAS0
A0 - A10
A0 - A10
RAS
CAS
DQ0 - DQ3
WE
DQ0 - DQ3
DQ0 - DQ3
A0 - A10
RAS
CAS
WE
OE
RAS1
RAS3
FUNCTIONAL DIAGRAM
MECHANICAL DIMENSIONS
4.250"
0.330"
MAX
3.985"
1.000"
MAX
+
0.425"
0.375"
+
0.250"
0.050"
TYP
0.125"
0.080"
ACCUTEK MICROCIRCUIT CORPORATION
BUSINESS CENTER at NEWBURYPORT
2 NEW PASTURE ROAD, SUITE 1
NEWBURYPORT, MA 01950-4054
PHONE: 978-465-6200
FAX: 978-462-3396
E-Mail:
sales@accutekmicro.com
Internet:
www.accutekmicro.com
CL CL
CL CL
Accutek reserves the right to make changes in specifications at any time
and without notice. Accutek does not assume any responsibility for the
use of any circuitry described; no circuit patent licenses are implied. Preliminary data sheets contain minimum and maximum limits based upon
design objectives, which are subject to change upon full characterization
over the specific operating conditions.