ACCUTEK AK581024

Accutek
Microcircuit
Corporation
AK584096AS / AK584096AG
4,194,304 x 8 Bit CMOS
Dynamic Random Access Memory
DESCRIPTION
Front View
The Accutek AK584096 high density memory module is CMOS
DRAM organized in 4 Meg x 8 bit words. The assembly consists of
eight standard 4 Meg x 1 DRAMs in plastic SOJ packages mounted
on the front side of a printed circuit board. The module can be configured as a leadless 30 pad SIM or a leaded 30 pin SIP. The module is only 0.800 inch high (same height as a standard 1 Meg
module) making it ideally suited for applications with low height
restrictions.
30-Pin SIM
30-Pin SIP
The operation of the AK584096 is identical to eight 4 Meg x 1
DRAMs. The data input is tied to the data output and brought out
separately for each device, with common RAS, CAS and WE control. This common I/O feature dictates the use of early-write cycles
to prevent contention of D and Q. Since the Write-Enable (WE) signal must always go low before CAS in a write cycle, Read-Write and
Read-Modify-Write operation is not possible.
FEATURES
30
1
1
· Operating free air temperature 00C to 700C
· 4,194,304 x 8 bit organization
· Upward compatible with AK5816384
· Optional 30 Pad leadless SIM (Single In-Line Module) or 30
Pin leaded SIP (Single In-Line Package)
· Downward compatible with AK58256 and AK581024
· JEDEC standard pinout
· Each device has common D and Q lines with common RAS,
CAS and WE control
· CAS-before-RAS refresh
· Power
4.40 Watt Max Active (80 nSEC)
3.75 Watt Max Active (100 nSEC)
44 mW Max Standby
PIN NOMENCLATURE
PIN ASSIGNMENT
FUNCTIONAL DIAGRAM
PIN #
SYMBOL
PIN #
SYMBOL
1
Vcc
16
DQ5
DQ1 - DQ8
Data In / Data Out
A0 - A10
Address Inputs
2
CAS
17
A8
CAS
Column Address Strobe
3
DQ1
18
A9
RAS
Row Address Strobe
4
A0
19
A10
5
A1
20
DQ6
WE
Write Enable
6
DQ2
21
WE
Vcc
5v Supply
7
A2
22
Vss
Vss
Ground
DQ7
NC
No Connect
MODULE OPTIONS
Leadless SIM: AK584096AS
Leaded SIP: AK584096AG
8
A3
23
9
Vss
24
NC
10
DQ3
25
DQ8
11
A4
26
NC
12
A5
27
RAS
13
DQ4
28
NC
14
A6
29
NC
15
A7
30
Vcc
MECHANICAL DIMENSIONS
ORDERING INFORMATION
PART NUMBER CODING INTERPRETATION
Position
1
2
3
6
Inches
7
8
0.425
0.375
.100
.060
0.325
0.275
1
1
3.525
3.475
3.100
3.090
30
0.200
MAX
0.053
0.047
Product
AK = Accutek Memory
Type
4 = Dynamic RAM
5 = CMOS Dynamic RAM
6 = Static RAM
Organization/Word Width
1 = by 1 16 = by 16
4 = by 4 32 = by 32
8 = by 8 36 = by 36
9 = by 9
Size/Bits Depth
64 = 64K
4096 = 4 MEG
256 = 256K
8192 = 8 MEG
1024 = 1 MEG 16384 = 16 MEG
Package Type
G = Single In-Line Package (SIP)
S = Single In-Line Module (SIM)
D = Dual In-Line Package (DIP)
W = .050 inch Pitch Edge Connect
Z = Zig-Zag In-Line Package (ZIP)
Special Designation
P = Page Mode
N = Nibble Mode
K = Static Column Mode
W = Write Per Bit Mode
V = Video Ram
Separator
- = Commercial 00C to +700C
M = Military Equivalent Screened
(-550C to +1250C)
I = Industrial Temperature Tested
(-450C to +850C)
X = Burned In
Speed (first two significant digits)
DRAMS
SRAMS
50 = 50 nS
8 =
8 nS
60 = 60 nS
10 = 10 nS
70 = 70 nS
12 = 12 nS
80 = 80 nS
15 = 15 nS
0.815
0.785
8
5
0.024
0.016
7
4
0.100
TYP
6
3
0.100
TYP
5
2
0.815
0.785
4
1
0.100
TYP
The numbers and coding on this page do not include all variations
available but are show as examples of the most widely used variations.
Contact Accutek if other information is required.
EXAMPLES:
AK584096ASP-80
4 Meg x 8, 80 nSEC DRAM 30 pin SIM Configuration, Page Mode
AK584096AGN-70
4 Meg x 8, 70 nSEC Dram 30 pin SIP Configuration, Nibble Mode
ACCUTEK MICROCIRCUIT CORPORATION
BUSINESS CENTER at NEWBURYPORT
2 NEW PASTURE ROAD, SUITE 1
NEWBURYPORT, MA 01950-4054
VOICE: 978-465-6200 FAX: 978-462-3396
Email:
[email protected]
Internet: www.accutekmicro.com
Accutek reserves the right to make changes in specifications at any
time and without notice. Accutek does not assume any responsibility for the use of any circuitry described; no circuit patent licenses
are implied. Preliminary data sheets contain minimum and maximum limits based upon design objectives, which are subject to
change upon full characterization over the specific operating conditions.