140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 2N5031 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-72 packaged VHF/UHF Transistor • 1.2 GHz Current-Gain Bandwidth Product @ 5mA IC • Maximum Unilateral Gain – 12 dB (typ) @ 400 MHz 2 1 3 4 1. Emitter 2. Base 3. Collector 4. Case TO-72 DESCRIPTION: The 2N5031 is a silicon NPN transistor, designed for general purpose small-signal, pre-driver, and driver, applications targeted for military and industrial equipment. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO Parameter Collector-Emitter Voltage Value 10 Unit Vdc VCBO Collector-Base Voltage 15 Vdc VEBO Emitter-Base Voltage 3.0 Vdc IC Collector Current 20 mA 200 1.14 mWatts mW/ ºC Thermal Data P D Total Device Dissipation @ TA = 25º C Derate above 25º C Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. 2N5031 ELECTRICAL SPECIFICATIONS (Tcase = 25° 25° C) STATIC (off) Symbol BVCEO BVCBO BVEBO ICBO Test Conditions Value Unit Min. Typ. Max. Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) 10 - - Vdc Collector-Base Breakdown Voltage (IC= 0.01 mAdc, IE=0) 15 - - Vdc Emitter-Base Breakdown Voltage (IE = 0.01mAdc, IC = 0) 3.0 - - - 1.0 10 nA 25 - 300 - Collector Cutoff Current (VCE = 6.0 Vdc, IE = 0 Vdc) Vdc (on) HFE DC Current Gain (IC = 1.0 mAdc, VCE = 6.0 Vdc) DYNAMIC Symbol fT CCB Test Conditions Value Unit Min. Typ. Max. Current-Gain - Bandwidth Product (IC = 5.0 mAdc, VCE = 6 Vdc, f = 100 MHz) 1200 - 2500 MHz Output Capacitance (IC = 1.0 mAdc, VCE = 6 Vdc, f = 450 MHz) - 2.5 - dB FUNCTIONAL Symbol G U max MAG Test Conditions Maximum Unilateral Gain (1) Maximum Available Gain Value Unit Min. Typ. Max. IC = 1 mAdc, VCE = 6Vdc, f = 400 MHz - 12 - dB IC = 1 mAdc, VCE = 6Vdc, f = 400 MHz - 12.4 - dB Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. 2N5031 Table 1. Common Emitter S-Parameters, @ VCE = 10 V, IC = 50 mA f S11 S21 S12 S22 (MHz) |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| 100 .610 -137 23.8 116 .026 46 .522 -78 200 .659 -161 13.2 98 .033 47 .351 -106 300 .671 -171 9.0 89 .040 51 .304 -120 400 .675 -178 6.8 83 .047 55 .292 -128 500 .677 176 5.5 77 .055 58 .293 -132 600 .678 172 4.6 72 .064 61 .299 -134 700 .677 168 4.0 68 .073 62 .306 -135 800 .679 184 3.5 64 .082 63 .314 -136 900 .678 160 3.1 60 .092 64 .322 -138 1000 .682 156 2.8 56 .102 65 .311 -139 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. ∠φ 2N5031 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.