APT10090BLL
APT10090SLL
1000V 12A 0.900Ω
POWER MOS 7
R
MOSFET
BLL
D3PAK
®
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
®
losses are addressed with Power MOS 7 by significantly lowering RDS(ON)
®
and Qg. Power MOS 7 combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
VDSS
ID
SLL
D
• Increased Power Dissipation
• Easier To Drive
• TO-247 or Surface Mount D3PAK Package
MAXIMUM RATINGS
Symbol
TO-247
G
S
All Ratings: TC = 25°C unless otherwise specified.
Parameter
Drain-Source Voltage
APT10090
UNIT
1000
Volts
12
Continuous Drain Current @ TC = 25°C
1
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
298
Watts
Linear Derating Factor
2.4
W/°C
VGSM
PD
TJ,TSTG
48
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
EAS
-55 to 150
Operating and Storage Junction Temperature Range
TL
1
12
1
Single Pulse Avalanche Energy
°C
300
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
Volts
Amps
30
4
mJ
1210
STATIC ELECTRICAL CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
ID(on)
R DS(on)
IDSS
IGSS
VGS(th)
On State Drain Current
2
MIN
(VDS > I D(on) x R DS(on) Max, VGS = 10V)
Drain-Source On-State Resistance
2
TYP
MAX
1000
Volts
12
Amps
(VGS = 10V, 6A)
0.90
Zero Gate Voltage Drain Current (VDS = 1000V, VGS = 0V)
100
Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V, TC = 125°C)
500
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 1mA)
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
Ohms
µA
±100
nA
5
Volts
7-2003
Characteristic / Test Conditions
050-7002 Rev C
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT10090BLL - SLL
Test Conditions
Characteristic
MIN
TYP
Ciss
Input Capacitance
Coss
Output Capacitance
VDS = 25V
332
Reverse Transfer Capacitance
f = 1 MHz
55
VGS = 10V
71
VDD = 500V
12
Crss
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain ("Miller") Charge
td(on)
Turn-on Delay Time
tr
ID = 12A @ 25°C
td(off)
tf
5
VDD = 500V
ID = 12A @ 25°C
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
4
INDUCTIVE SWITCHING @ 25°C
6
334
VDD = 670V, VGS = 15V
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
ID = 12A, RG = 5Ω
77
INDUCTIVE SWITCHING @ 125°C
6
ns
23
RG = 1.6Ω
Fall Time
nC
9
VGS = 15V
Turn-off Delay Time
pF
47
RESISTIVE SWITCHING
Rise Time
UNIT
1969
VGS = 0V
3
MAX
µJ
672
VDD = 670V VGS = 15V
ID = 12A, RG = 5Ω
100
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
MIN
Characteristic / Test Conditions
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current
1
VSD
Diode Forward Voltage
2
TYP
12
48
(Body Diode)
1.3
(VGS = 0V, IS = -ID12A)
t rr
Reverse Recovery Time (IS = -ID12A, dl S/dt = 100A/µs)
700
Q rr
Reverse Recovery Charge (IS = -ID12A, dl S/dt = 100A/µs)
9.0
dv/
Peak Diode Recovery
dt
dv/
dt
MAX
5
UNIT
Amps
Volts
ns
µC
10
V/ns
MAX
UNIT
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
RθJC
Junction to Case
RθJA
Junction to Ambient
TYP
0.42
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 16.81mH, RG = 25Ω, Peak IL = 12A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID12A di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C
6 Eon includes diode reverse recovery measured in accordance wtih
JEDEC standard JESD24-1. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.9
0.35
0.7
0.30
0.25
0.5
Note:
0.20
0.15
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-7002 Rev C
7-2003
0.45
0.40
0.3
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
0.1
0.05
0.05
0
t1
t2
0.10
10-5
SINGLE PULSE
10-4
°C/W
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
APT10090BLL - SLL
RC MODEL
Junction
temp. ( ”C)
0.164
0.00592F
Power
(Watts)
0.257
0.125F
Case temperature
ID, DRAIN CURRENT (AMPERES)
30
25
VGS =15,10V& 7.5V
20
7V
6.5
15
6V
10
5.5V
5
5V
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
30
25
20
TJ = +125°C
15
TJ = +25°C
10
0
0
1
2
3
4
5
6
7
8
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
10
8
6
4
2
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.5
D
1.30
1.20
1.10
VGS=10V
1.00
VGS=20V
0.90
0.80
0
5
10
15
20
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
I
V
D
GS
1.10
1.05
1.00
0.95
0.90
0.85
-50
-25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
= 6A
= 10V
2.0
1.5
1.0
0.5
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, RDS(ON) vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
NORMALIZED TO
= 10V @ I = 6A
GS
1.15
12
0.0
-50
V
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
7-2003
5
VDS> ID (ON) x RDS(ON) MAX.
250 µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.40
050-7002 Rev C
ID, DRAIN CURRENT (AMPERES)
TJ = -55°C
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
0
Typical Performance Curves
APT10090BLL - SLL
10,000
OPERATION HERE
LIMITED BY RDS (ON)
Ciss
10
100µS
1mS
1
10mS
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
48
1,000
Coss
100
Crss
TC =+25°C
TJ =+150°C
SINGLE PULSE
1
10
100
1000
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
I
= 12A
D
12
VDS=200V
VDS=500V
VDS=800V
8
4
0
0
10
20 30 40 50 60 70 80 90 100
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE
10
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
200
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
.1
60
100
TJ =+150°C
TJ =+25°C
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
40
td(off)
tf
50
V
DD
R
G
= 670V
tr and tf (ns)
td(on) and td(off) (ns)
30
40
= 5Ω
T = 125°C
J
30
L = 100µH
20
V
G
L = 100µH
td(on)
0
5
0
10
15
20
ID (A)
FIGURE 14, DELAY TIMES vs CURRENT
10
15
20
ID (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
1200
0
5
1200
V
DD
R
G
1000
= 670V
Eon
= 5Ω
1000
T = 125°C
J
L = 100µH
E ON includes
800
diode reverse recovery.
600
400
Eoff
200
SWITCHING ENERGY (µJ)
SWITCHING ENERGY (µJ)
tr
J
10
7-2003
= 670V
= 5Ω
T = 125°C
20
10
050-7002 Rev C
DD
R
800
Eon
600
V
400
DD
I
D
= 670V
= 12A
T = 125°C
Eoff
200
J
L = 100µH
EON includes
diode reverse recovery.
0
0
5
10
15
20
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
0
5
10 15 20 25 30 35 40 45 50
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
Typical Performance Curves
APT10090BLL - SLL
Gate Voltage
90%
10 %
Gate Voltage
T = 125 C
J
td(on)
T = 125 C
J
t
d(off)
tr
Drain Current
Drain Voltage
90%
90%
5%
5%
10 %
10%
Drain Voltage
tf
Switching Energy
Drain Current
0
Switching Energy
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT15DF120B
IC
V DD
V CE
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
3
TO-247 Package Outline
15.49 (.610)
16.26 (.640)
6.15 (.242) BSC
Drain
Drain
(Heat Sink)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
D PAK Package Outline
5.38 (.212)
6.20 (.244)
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
15.95 (.628)
16.05 (.632)
Revised
4/18/95
20.80 (.819)
21.46 (.845)
1.04 (.041)
1.15 (.045)
13.79 (.543)
13.99 (.551)
13.41 (.528)
13.51 (.532)
Revised
8/29/97
11.51 (.453)
11.61 (.457)
3.50 (.138)
3.81 (.150)
0.40 (.016)
0.79 (.031)
0.020 (.001)
0.178 (.007)
2.67 (.105)
2.84 (.112)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
1.27 (.050)
1.40 (.055)
1.22 (.048)
1.32 (.052)
1.98 (.078)
2.08 (.082)
5.45 (.215) BSC
{2 Plcs.}
Gate
Drain
Source
2.21 (.087)
2.59 (.102)
Source
Drain
Gate
Dimensions in Millimeters (Inches)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT's devices are covered by one or more of the following U.S.patents:
4,895,810
5,256,583
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058
3.81 (.150)
4.06 (.160)
(Base of Lead)
Heat Sink (Drain)
and Leads
are Plated
7-2003
4.50 (.177) Max.
050-7002 Rev C
0.46 (.018)
0.56 (.022) {3 Plcs}