APT10M11JVRU2 ISOTOP® Boost chopper MOSFET Power Module K D S K Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Very rugged • Low profile D G Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch Features • Power MOS V® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic diode - Avalanche energy rated - Very rugged • ISOTOP® Package (SOT-227) • Very low stray inductance • High level of integration G S VDSS = 100V RDSon = 11mΩ max @ Tj = 25°C ID = 142A @ Tc = 25°C ISOTOP Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS IFA V IFRMS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Maximum Average Forward Current Duty cycle=0.5 RMS Forward Current (Square wave, 50% duty) Tc = 25°C Tc = 90°C Max ratings 100 142 106 576 ±30 11 450 144 50 2500 30 47 Unit V A V mΩ W A mJ A These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1–7 APT10M11JVRU2 – Rev 0 October, 2004 Absolute maximum ratings APT10M11JVRU2 All ratings @ Tj = 25°C unless otherwise specified Symbol BVDSS IDSS RDS(on) VGS(th) IGSS Characteristic Drain - Source Breakdown Voltage Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Tf VF VGS = 0V,VDS = 100V VGS = 0V,VDS = 80V Rise Time Turn-off Delay Time Fall Time Characteristic Diode Forward Voltage IRM Maximum Reverse Leakage Current CT Junction Capacitance Reverse Recovery Time trr Maximum Reverse Recovery Current Qrr Reverse Recovery Charge trr Qrr Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current IRRM Typ Tj = 25°C Tj = 125°C VGS = 10V, ID = 71A VGS = VDS, ID = 2.5mA VGS = ±20 V, VDS = 0V 2 Test Conditions VGS = 0V VDS = 25V f = 1MHz Min VGS = 10V VBus = 50V ID = 50A @ TJ=25°C Typ 8600 3200 1180 300 Unit V 250 1000 11 4 ±100 mΩ V nA Max Unit µA pF nC 110 16 48 ns 51 9 Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C 21 IF = 30A VR = 133V di/dt =200A/µs Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 24 48 3 6 33 150 31 335 19 IF = 30A VR = 133V di/dt =1000A/µs Max 95 Test Conditions IF = 30A IF = 60A IF = 30A VR = 200V VR = 200V VR = 200V IF=1A,VR=30V di/dt =200A/µs Reverse Recovery Time IRRM Min 100 VGS = 15V VBus = 50V ID = 142A @ TJ=25°C R G = 0.6Ω Diode ratings and characteristics Symbol Test Conditions VGS = 0V, ID = 250µA Min Typ 1.1 1.4 0.9 250 500 94 Tj = 125°C APT website – http://www.advancedpower.com Max 1.15 Unit V µA pF ns A nC ns nC A 2–7 APT10M11JVRU2 – Rev 0 October, 2004 Electrical Characteristics APT10M11JVRU2 Thermal and package characteristics Symbol RthJC RthJA VISOL TJ,TSTG TL Torque Wt Characteristic Min Typ MOSFET Diode Junction to Case Junction to Ambient (IGBT & Diode) RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Storage Temperature Range Max Lead Temp for Soldering:0.063” from case for 10 sec Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Package Weight 2500 -55 Max 0.28 1.21 20 Unit °C/W V 150 300 1.5 29.2 °C N.m g APT website – http://www.advancedpower.com 3–7 APT10M11JVRU2 – Rev 0 October, 2004 Typical MOSFET Performance Curve APT website – http://www.advancedpower.com 4–7 APT10M11JVRU2 – Rev 0 October, 2004 APT10M11JVRU2 APT10M11JVRU2 APT website – http://www.advancedpower.com 5–7 APT10M11JVRU2 – Rev 0 October, 2004 Typical Diode Performance Curve APT website – http://www.advancedpower.com 6–7 APT10M11JVRU2 – Rev 0 October, 2004 APT10M11JVRU2 APT10M11JVRU2 SOT-227 (ISOTOP®) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) r = 4.0 (.157) (2 places) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 1.95 (.077) 2.14 (.084) Cathode 30.1 (1.185) 30.3 (1.193) Drain * Emitter terminals are shorted internally. Current handling capability is equal for either Emitter terminal. 38.0 (1.496) 38.2 (1.504) Source Gate Dimensions in Millimeters and (Inches) ISOTOP® is a Registered Trademark of SGS Thomson APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 7–7 APT10M11JVRU2 – Rev 0 October, 2004 7.8 (.307) 8.2 (.322)