APT11N80KC3
800V 11A 0.450Ω
Super Junction MOSFET
TO-220
COOLMOS
Power Semiconductors
• Ultra low RDS(ON)
• Low Miller Capacitance
• Ultra Low Gate Charge, Qg
• Avalanche Energy Rated
• TO-220 Package
G
VDSS
ID
S
D
G
S
MAXIMUM RATINGS
Symbol
D
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT11N80KC3
UNIT
800
Volts
Drain-Source Voltage
11
Continuous Drain Current @ TC = 25°C
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±20
VGSM
Gate-Source Voltage Transient
±30
Total Power Dissipation @ TC = 25°C
156
Watts
Linear Derating Factor
1.25
W/°C
PD
TJ,TSTG
TL
dv/
dt
1
33
Operating and Storage Junction Temperature Range
-55 to 150
°C
Lead Temperature: 0.063" from Case for 10 Sec.
260
Drain-Source Voltage slope (VDS = 640V, ID = 11A, TJ = 125°C)
50
V/ns
11
Amps
IAR
Repetitive Avalanche Current
7
EAR
Repetitive Avalanche Energy
7
EAS
Volts
Single Pulse Avalanche Energy
0.2
4
mJ
470
STATIC ELECTRICAL CHARACTERISTICS
MIN
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
800
RDS(on)
Drain-Source On-State Resistance
IDSS
IGSS
VGS(th)
2
(VGS = 10V, ID = 7.1A)
Zero Gate Voltage Drain Current (VDS = 800, VGS = 0V)
TYP
0.39
0.45
0.5
20
200
Gate-Source Leakage Current (VGS = ±20V, VDS = 0V)
2.1
UNIT
Volts
Zero Gate Voltage Drain Current (VDS = 800, VGS = 0V, TJ = 150°C)
Gate Threshold Voltage (VDS = VGS, ID = 680µA)
MAX
3
Ohms
µA
±100
nA
3.9
Volts
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
"COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG"
4-2004
Characteristic / Test Conditions
050-7135 Rev A
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT11N80KC3
Test Conditions
Characteristic
MIN
TYP
Ciss
Input Capacitance
Coss
Output Capacitance
VDS = 25V
770
Crss
Reverse Transfer Capacitance
f = 1 MHz
18
VGS = 10V
60
VDD = 400V
8
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain ("Miller") Charge
td(on)
ID = 11A @ 25°C
tf
15
VDD = 400V
ID = 11A @ 25°C
Turn-off Delay Time
RG = 7.5Ω
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
INDUCTIVE SWITCHING @ 25°C
6
70
80
7
10
ns
165
VDD = 533V, VGS = 15V
6
nC
25
VGS = 10V
Rise Time
td(off)
pF
30
RESISTIVE SWITCHING
Turn-on Delay Time
tr
UNIT
1585
VGS = 0V
3
MAX
ID = 11A, RG = 5Ω
50
INDUCTIVE SWITCHING @ 125°C
305
VDD = 533V VGS = 15V
µJ
65
ID = 11A, RG = 5Ω
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
IS
MIN
Characteristic / Test Conditions
TYP
MAX
11
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current
1
VSD
Diode Forward Voltage
2
t rr
Reverse Recovery Time (IS = 11A, dl S/dt = -100A/µs, VR = 640V)
Q rr
Reverse Recovery Charge (IS = 11A, dl S/dt = -100A/µs, VR = 640V)
dv/
Peak Diode Recovery
dt
dv/
33
(Body Diode)
(VGS = 0V, IS = - 11A)
dt
1
1.2
UNIT
Amps
Volts
550
ns
10
µC
6
V/ns
MAX
UNIT
5
THERMAL CHARACTERISTICS
Symbol
MIN
Characteristic
RθJC
Junction to Case
RθJA
Junction to Ambient
TYP
0.80
62
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 194mH, RG = 25Ω, Peak IL = 2.2A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID 11A di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
7 Repetitve avalanche causes additional power losses that can be
calculated as PAV=EAR*f
0.80
0.9
0.60
0.7
0.50
0.5
0.40
Note:
0.30
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-7135 Rev A
4-2004
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.90
0.70
0.3
0.20
0
t1
t2
0.1
0.10
SINGLE PULSE
0.05
10-5
10-4
°C/W
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
APT11N80KC3
RC MODEL
Junction
temp. (°C)
0.345
0.00375
0.455
0.101
Power
(watts)
Case temperature
ID, DRAIN CURRENT (AMPERES)
30
VGS =15 & 10V
25
6.5V
20
6V
15
5.5V
10
5V
4.5V
5
4V
0
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
35
30
TJ = -55°C
TJ = +25°C
25
20
TJ = +125°C
15
10
5
0
0 1 2
3 4
5 6 7
8
9 10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
NORMALIZED TO
V
= 10V @ 5.5A
GS
1.30
1.20
VGS=10V
1.10
1.00
VGS=20V
0.90
0.80
0
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
1.15
10
8
6
4
2
0
25
50
75
100
125
150
I
V
2.5
D
= 5.5A
GS
1.5
1.0
0.5
-25
1.05
1.00
0.95
0.90
0.85
0.80
-50 -25
0
25
50
75
100 125 150
= 10V
2.0
0
-50
1.10
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
3.0
20
FIGURE 5, RDS(ON) vs DRAIN CURRENT
FIGURE 4, TRANSFER CHARACTERISTICS
12
4
8
12
16
ID, DRAIN CURRENT (AMPERES)
0
25
50
75
100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
1.1
1.0
0.9
4-2004
ID, DRAIN CURRENT (AMPERES)
40
0.8
0.7
0.6
-50
-25
0
25
50
75
100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-7135 Rev A
45
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
0
5
10
15
20
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.40
APT11N80KC3
Ciss
10
1
1mS
10mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
D
= 11A
12
VDS= 160V
VDS= 400V
8
VDS= 640V
4
0
0
20
40
60
80
100
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
30
50
V
DD
R
G
40
= 533V
tr and tf (ns)
td(on) and td(off) (ns)
TJ =+25°C
tf
= 5Ω
T = 125°C
J
L = 100µH
30
20
V
DD
R
20
G
= 533V
= 5Ω
T = 125°C
J
L = 100µH
tr
10
td(on)
5
8
0
11
14
17
20
ID (A)
FIGURE 14, DELAY TIMES vs CURRENT
14
17
20
ID (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
500
5
8
11
500
Eon
400
V
DD
R
G
300
= 533V
= 5Ω
T = 125°C
J
L = 100µH
EON includes
diode reverse recovery.
200
100
Eoff
SWITCHING ENERGY (µJ)
SWITCHING ENERGY (µJ)
TJ =+150°C
10
td(off)
10
4-2004
100
40
60
050-7135 Rev A
10
1
70
0
Coss
100
Crss
1
10
100
800
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
I
1,000
C, CAPACITANCE (pF)
100µS
5
.1
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
10,000
OPERATION HERE
LIMITED BY RDS (ON)
IDR, REVERSE DRAIN CURRENT (AMPERES)
ID, DRAIN CURRENT (AMPERES)
33
Eon
400
300
200
V
Eoff
I
DD
D
= 533V
= 11A
T = 125°C
J
100
L = 100µH
EON includes
diode reverse recovery.
0
5
8
11
14
17
20
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
0
0
5
10 15 20 25 30 35 40 45 50
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
APT11N80KC3
90%
Gate Voltage
10%
Gate Voltage
TJ = 125 C
td(on)
tr
5%
td(off)
10%
tf
Collector Current
90%
TJ = 125 C
Collector Voltage
90%
5%
0
10%
Collector Voltage
Collector Current
Switching Energy
Switching Energy
APT15DF60B
V DD
V CE
IC
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
TO-220AC Package Outline
1.39 (.055)
0.51 (.020)
16.51 (.650)
14.23 (.560)
Drain
4.08 (.161) Dia.
3.54 (.139)
3.42 (.135)
2.54 (.100)
10.66 (.420)
9.66 (.380)
5.33 (.210)
4.83 (.190)
6.85 (.270)
5.85 (.230)
6.35 (.250)
MAX.
1.01 (.040) 3-Plcs.
0.38 (.015)
4.82 (.190)
3.56 (.140)
2.79 (.110)
2.29 (.090)
5.33 (.210)
4.83 (.190)
Gate
Drain
Source
1.77 (.070) 3-Plcs.
1.15 (.045)
Dimensions in Millimeters and (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
4-2004
2.92 (.115)
2.04 (.080)
14.73 (.580)
12.70 (.500)
050-7135 Rev A
0.50 (.020)
0.41 (.016)